Semiconductor chip, method for producing a plurality of semiconductor chips and method for producing an electronic or optoelectronic device and electronic or optoelectronic device

1. A method for producing a plurality of semiconductor chips having the following steps:

providing a wafer with a plurality of semiconductor bodies, wherein dicing lines are arranged between the semiconductor bodies;

depositing a contact layer on the wafer, wherein the material of the contact layer is selected from the following group: platinum, rhodium, palladium, and gold, and

wherein the contact layer has a thickness of between 8 nanometers and 250 nanometers inclusive;

applying the wafer onto a film;

at least partially cutting through the wafer in the vertical direction along the dicing lines, in which dicing trenches arise, wherein the ratio of the width of the dicing trenches to a thickness of the wafer is in each case no greater than 1:3; and

expanding the film, such that spatial separation of the semiconductor chips takes place, wherein the contact layer is also diced.

2. The method according to claim 1 , wherein the wafer is partially cut through by means of plasma etching or scribing or the seed cracks are introduced by means of stealth dicing or scribing.

3. The method according to claim 1 , wherein the contact layer is applied over the entire surface of the wafer.

4. The method according to claim 1 , wherein each semiconductor body comprises a semiconductor surface which is formed by a semiconductor material, and

wherein the contact layer is deposited in direct contact on the semiconductor surface.

5. The method according to claim 1 , wherein the semiconductor body and/or the semiconductor surface comprises one of the following materials: silicon, germanium.

6. The method according to claim 1 , wherein each semiconductor body comprises:

an epitaxial semiconductor layer sequence with an active zone which generates electromagnetic radiation when in operation,

a carrier, which mechanically stabilizes the epitaxial semiconductor layer sequence, and

a metallic mirror layer between the epitaxial semiconductor layer sequence and the carrier which directs radiation from the active zone to a radiation exit face of the semiconductor chip,

wherein the wafer is only partially cut through in the vertical direction using a laser scribing process,

wherein the metallic mirror layer is likewise cut through on cutting through of the wafer, and

wherein the wafer is cut through completely in the vertical direction as far as the contact layer using a laser scribing process.

7. A semiconductor chip produced using the method of claim 1 , the semiconductor chip having a semiconductor body onto which the contact layer has been applied, wherein the material of the contact layer is selected from the following group: platinum, rhodium, palladium, gold, and

wherein the contact layer has a thickness of between 8 nanometers and 250 nanometers inclusive.

8. The semiconductor chip according claim 7 comprising a semiconductor surface to which the contact layer has been applied in direct contact.

9. The semiconductor chip according to claim 7 , wherein the contact layer forms an ohmic contact with the semiconductor surface.

10. The semiconductor chip according to claim 7 , wherein the contact layer is applied over the entire surface of a major face of the semiconductor body.

11. The semiconductor chip according to claim 7 , having an edge length which is no greater than 5 millimeters.

12. The semiconductor chip according to claim 7 , the semiconductor body comprising:

an epitaxial semiconductor layer sequence with an active zone which generates electromagnetic radiation when in operation;

a carrier, which mechanically stabilizes the epitaxial semiconductor layer sequence; and

a mirror layer between the epitaxial semiconductor layer sequence and the carrier which directs radiation from the active zone to a radiation exit face of the semiconductor chip, wherein the contact layer is applied to a major face of the carrier opposite the radiation exit face.

13. The semiconductor chip according to claim 7 , wherein the contact layer alone forms an electrical contact of the semiconductor chip.

14. The semiconductor chip according to claim 7 , wherein the semiconductor surface and/or the carrier are formed of silicon or germanium.

15. A method for producing an electronic or optoelectronic device, wherein a semiconductor chip according to claim 7 is mounted on a chip carrier or in a device package by means of one of the following methods: soldering, adhesive bonding using an electrically conductive adhesive, or silver sintering, and

wherein an electrically conductive joint arises between the contact layer and the chip carrier or the device package.

16. A device produced using a method according to claim 15 .

17. A method for producing a plurality of semiconductor chips having the following steps:

providing a wafer with a plurality of semiconductor bodies, wherein dicing lines are arranged between the semiconductor bodies;

depositing a contact layer on the wafer, wherein the material of the contact layer is selected from the following group: platinum, rhodium, palladium, and gold,

wherein the contact layer has a thickness of between 8 nanometers and 250 nanometers inclusive;

applying the wafer onto a film;

at least partially cutting through the wafer in the vertical direction along the dicing lines or introducing seed cracks into the wafer along the dicing lines; and

expanding the film, such that spatial separation of the semiconductor chips takes place, wherein the contact layer is also diced,

wherein each semiconductor body comprises:

an epitaxial semiconductor layer sequence with an active zone which generates electromagnetic radiation when in operation,

a carrier, which mechanically stabilizes the epitaxial semiconductor layer sequence,

a metallic mirror layer between the epitaxial semiconductor layer sequence and the carrier which directs radiation from the active zone to a radiation exit face of the semiconductor chip,

wherein the wafer is only partially cut through in the vertical direction using a laser scribing process,

wherein the metallic mirror layer is likewise cut through on cutting through of the wafer, and

wherein the wafer is cut through completely in the vertical direction as far as the contact layer using a laser scribing process.

18. A semiconductor chip produced with a method having the following steps:

providing a wafer with a plurality of semiconductor bodies, wherein dicing lines are arranged between the semiconductor bodies;

depositing a contact layer on the wafer;

applying the wafer onto a film;

at least partially cutting through the wafer in the vertical direction along the dicing lines or introducing seed cracks into the wafer along the dicing lines; and

expanding the film, such that spatial separation of the semiconductor chips takes place, wherein the contact layer is also diced,

wherein the material of the contact layer is selected from the following group: platinum, rhodium, palladium, and gold,

wherein the contact layer has a thickness of between 8 nanometers and 250 nanometers inclusive, and

wherein the semiconductor body comprises:

an epitaxial semiconductor layer sequence with an active zone which generates electromagnetic radiation when in operation;

a carrier, which mechanically stabilizes the epitaxial semiconductor layer sequence; and

a mirror layer between the epitaxial semiconductor layer sequence and the carrier which directs radiation from the active zone to a radiation exit face of the semiconductor chip, wherein the contact layer is applied to a major face of the carrier opposite the radiation exit face.