Integrated circuits and methods of manufacturing
A technique for making high performance low noise amplifiers, low cost high performance RF, microwave circuits and other devices by using a minimum of costly high performance semiconductors is described. By combining a single discrete portion of an expensive semiconductor with a less expensive GaAs carrier, MMIC devices with improved performance over their discrete counterparts are achieved.
1. An integrated circuit module having a discrete semiconductor component providing a first portion of a semiconductor circuit, the discrete semiconductor component being mounted on a carrier integrated circuit chip that provides a second portion of the semiconductor circuit, wherein the first portion of the semiconductor circuit comprises discrete PIN diodes, and the second portion of the semiconductor circuit comprises a GaAs carrier chip having RF switching means.
2. An integrated circuit module according to claim 1 , in which:
the first portion of the semiconductor circuit comprises an FET having a first smaller gate size suitable for low noise amplification, and the second portion of the semiconductor circuit comprises a GaAs MMIC carrier chip having optical gates of a second larger gate size.
3. An integrated circuit module according to claim 1 , in which:
the first portion comprises:
an InP or GaAs substrate, and
the second portion comprises:
a GaAs MMIC.
4. An integrated circuit module according to claim 1 , wherein the first portion of the semiconductor circuit provides a first amplifier, and the second portion of the semiconductor circuit provides a second amplifier,
wherein the first amplifier has a small gate size.
5. An integrated circuit module according to claim 4 , in which:
the first portion comprises:
an FET having a first smaller size suitable for low noise amplification, and
the second portion comprises:
a GaAs MMIC carrier chip having optical gates of a second larger gate size.
6. A method of manufacturing an integrated circuit module, comprising:
(a) manufacturing a first portion of a semiconductor circuit of the integrated circuit, the first portion having a discrete semiconductor component;
(b) manufacturing a second portion of the semiconductor circuit having a carrier integrated circuit, wherein the second portion includes a carrier chip having a second stage amplifier; and
(c) mounting the first portion on the second portion,
wherein the manufacturing step (a) comprises:
manufacturing at least one PIN diode, and
the manufacturing step (b) comprises:
manufacturing a carrier chip having a GaAs FET incorporated into a carrier MMIC.
7. A method according to claim 6 , in which:
the manufacturing step (a) comprises:
manufacturing the amplifier with a first smaller gate size, and
the manufacturing step (b) comprises:
manufacturing a carrier chip having the second stage amplifier with a second gate size larger than that in the first portion.
8. A method according to claim 6 , in which:
the first portion comprises:
an InP or GaAs substrate, and
the second portion comprises:
a GaAs MMIC.