Polyetherimide compositions, articles made therefrom, and method of manufacture thereof

1. A circuit assembly comprising

a polyetherimide dielectric layer comprising a polyetherimide composition comprising

a polyetherimide sulfone having a glass transition temperature of 240 to 320° C.; and

a particulate, thermally conductive filler composition comprising 30 to 50 wt. % boron nitride and 5 to 15 wt. % graphite, wherein weight percent is based on the total weight of the polyetherimide composition; and

a conductive metal layer disposed on the polyetherimide dielectric layer;

wherein the polyetherimide dielectric layer

resists deformation as determined by IPC method TM-650 when subjected to a lead-free solder reflow process at a temperature of greater than or equal to 260° C., and

the polyetherimide dielectric layer has a thermal conductivity of 2.5 to 15 W/mK as determined in accordance with ISO 22007-2:2008.

2. The circuit assembly of claim 1 , wherein the conductive metal layer is in the form of a circuit.

3. An article comprising the circuit assembly of claim 1 .

4. A method of preparing the circuit assembly of claim 1 , the method comprising

forming the polyetherimide dielectric layer;

laminating the polyetherimide dielectric layer to the conductive metal layer under heat and pressure; and

reflow-soldering an electronic component to the circuit assembly.

5. The method of claim 4 , wherein the forming comprises extruding the polyetherimide dielectric layer, three-dimensionally printing the polyetherimide dielectric layer, metal insert molding the polyetherimide dielectric layer, or multilayer film casting the polyetherimide dielectric layer.