Ultrasonic-wave probe, ultrasonic-wave diagnosis apparatus, and test method of ultrasonic-wave probe

1. An ultrasonic-wave probe comprising:

an oscillator;

a transmission circuit connected to the oscillator;

a reception circuit connected to the oscillator; and

a transmission/reception separation switch disposed between the oscillator and the reception circuit, wherein the transmission/reception separation switch includes two transistor elements, a gate and a source of the two transistor elements are mutually connected,

the transmission/reception separation switch includes a gate-potential step-down circuit configured to lower a voltage Vgs between the common gate and the common source of the two transistor elements, and

the two transistor elements are configured such that in a case that a test signal is input to the transmission circuit to loopback the test signal from the transmission circuit to the reception circuit, a gate potential of the transistor elements is stepped down to cause the test signal to pass through while retaining the voltage Vgs between the common gate and the common source, the voltage Vgs not violating a gate-source withstand voltage of the transistor elements.

2. The ultrasonic-wave probe according to claim 1 , wherein

the gate-potential step-down circuit includes at least two resistive elements, and

the voltage Vgs between the common gate and the common source is set by a voltage division ratio of a power-supply voltage and the two resistive elements.

3. The ultrasonic-wave probe according to claim 1 , wherein

the gate-potential step-down circuit includes one or a plurality of serially-connected diode elements and includes a resistance or a current source for obtaining a current to flow to the diode(s), and

the voltage Vgs between the common gate and the common source is set by a power-supply voltage and a forward voltage of the diode(s).

4. The ultrasonic-wave probe according to claim 1 , wherein

the gate-potential step-down circuit includes one or a plurality of drain-gate-connected diode-connected transistor(s) and includes a resistance or a current source for obtaining a current to flow to the diode-connected transistor(s), and

the voltage Vgs between the common gate and the common source is set by a power-supply voltage and a gate-source voltage of the diode-connected transistor.

5. The ultrasonic-wave probe according to claim 1 , wherein

an output-side transistor is connected to a switch output of the transmission/reception separation switch,

a connection destination of the output-side transistor is GND of 0 V or a power source corresponding to a center voltage of a signal applied to an input in a switch-on state, and

the switch output is short-circuited to the GND or the power source corresponding to the center voltage via the output-side transistor to subject a voltage of an input signal of the transmission/reception separation switch to voltage dividing by an on-resistance of the transmission/reception separation switch and an on-resistance of the output-side transistor and attenuate a signal amplitude of the voltage.

6. The ultrasonic-wave probe according to claim 5 , wherein

the output-side transistor can be set to exert three or more functions corresponding to modes that:

in a case of reception of the ultrasonic-wave probe, the output-side transistor is in an off-state and causes a switch input signal of the transmission/reception separation switch to pass through without being attenuated;

in a case of transmission of the ultrasonic-wave probe, the output-side transistor is in an on-state and connects the switch output to the GND or the power source corresponding to the center voltage with a low impedance to suppress voltage variation of a switch output signal of the transmission/reception separation switch; and,

when the test signal is to loopback, the output-side transistor becomes an on-state and subjects the input signal of the switch to voltage dividing by the on-resistance of the transmission/reception separation switch and the on-resistance of the output-side transistor.

7. The ultrasonic-wave probe according to claim 1 , wherein

potentials in three or more levels are applied as the potential of the common gate of the two transistor elements,

in a case of reception of the ultrasonic-wave probe, the gate-source voltage Vgs is turned on as a first voltage with a low on-resistance,

in a case of transmission of the ultrasonic-wave probe, the gate-source voltage Vgs is caused to be in a switch-off state as a second voltage, and

when the test signal is to loopback, the gate-source voltage Vgs between the first voltage and the second voltage is applied to obtain an on-state with a high on-resistance higher than the low on-resistance, so that a plurality of states in the three or more levels corresponding to the modes are obtained.

8. An ultrasonic-wave diagnosis apparatus comprising: a sub array(s); an adder circuit configured to add an output from the sub array; and a main-body device configured to process the output from the adder circuit, wherein

the sub array includes a plurality of oscillator channels,

each of the oscillator channels includes an oscillator, a transmission circuit connected to the oscillator, a reception circuit connected to the oscillator, and a transmission/reception separation switch,

the transmission/reception separation switch includes a transistor element as a switching element,

the transmission/reception separation switch includes a potential control circuit for controlling a gate-source voltage Vgs of the transistor, and

the ultrasonic-wave diagnosis apparatus includes:

a transmission mode to cause the transmission/reception separation switch to be in an off-state in a case of transmission in which a signal from the transmission circuit is input to the oscillator;

a reception mode to cause the transmission/reception separation switch to be in an on-state in a case of reception in which a signal is input from the oscillator to the reception circuit; and

a test mode to set the gate-source voltage Vgs of the transistor to a potential different from the potential in the transmission mode and the potential in the reception mode by the potential control circuit.

9. The ultrasonic-wave diagnosis apparatus according to claim 8 , wherein,

in the test mode, transmission of a continuous-wave Doppler mode with a transmission voltage lowered than a B mode is carried out by the transmission circuit.

10. The ultrasonic-wave diagnosis apparatus according to claim 8 , wherein,

in the test mode, a test signal passed through the transmission circuit, the transmission/reception separation switch, and the reception circuit is transmitted to the main-body device, and the transmitted signal is compared with an expected pattern by the main-body device.

11. The ultrasonic-wave diagnosis apparatus according to claim 8 , comprising

an ultrasonic-wave probe including the plurality of sub arrays, wherein,

in the test mode, a test signal passed through the transmission circuit, the transmission/reception separation switch, and the reception circuit is compared with an expected pattern in the ultrasonic-wave probe.

12. The ultrasonic-wave diagnosis apparatus according to claim 8 , comprising

a judge device configured to compare, with an expected pattern, and judge a test signal passed through the transmission circuit, the transmission/reception separation switch, and the reception circuit in the test mode, wherein

the judge device compares a frequency of a voltage signal of the passed test signal with an expected value.

13. The ultrasonic-wave diagnosis apparatus according to claim 8 , comprising

a judge device configured to compare, with an expected pattern, and judge a test signal passed through the transmission circuit, the transmission/reception separation switch, and the reception circuit in the test mode, wherein

the judge device includes

two or more analog comparators configured to compare a voltage of the passed test signal with predetermined reference potentials,

the reference potentials input to the respective analog comparators are different from each other, and

the judge device compares, with an expected value, both of:

the number of times that the voltage crosses a higher reference potential among the two reference potentials and is toggled within predetermined time, in other words, a frequency of the signal in a case of slicing with a high threshold value and

the number of times that the voltage crosses a lower reference potential among the two reference potentials and is toggled within predetermined time, in other words, a signal frequency in a case of slicing with a low threshold value

to judge that the voltage has reached a voltage level equal to or higher than the high reference potential and a voltage level equal to or less than the low reference potential and the test signal is toggled at a predetermined frequency with an amplitude equal to or more than a difference between the reference potentials.

14. A test method of an ultrasonic-wave probe that includes an oscillator; a transmission circuit connected to the oscillator; a reception circuit connected to the oscillator; and a transmission/reception separation switch disposed between the oscillator and the reception circuit, wherein the transmission/reception separation switch includes two transistor elements and is configured to mutually connect a gate and a source of the two transistor elements, the test method comprising:

causing, in a transmission mode, the transmission/reception separation switch to be in an off-state in a case of transmission in which the oscillator is driven by the transmission circuit;

causing, in a reception mode, the transmission/reception separation switch to be in an on-state in a case of reception in which a signal from the oscillator is input to the reception circuit; and

setting, in a test mode, a voltage Vgs between the common gate and the common source of the two transistors to a middle of a voltage in the transmission mode and a voltage in the reception mode.

15. The test method of the ultrasonic-wave probe according to claim 14 , wherein

a voltage applied between the common gate and the common source of the two transistors is subjected to voltage dividing or voltage step-down to change the voltage Vgs and make a transition among the three modes.