Power semiconductor module and electric power conversion device
An object of the present invention is to achieve both low height and miniaturization of a double side cooling type electric power conversion device. A power semiconductor module according to the present invention includes: a circuit body including a power semiconductor device and a terminal; and a case forming an accommodation space for accommodating the circuit body, wherein the case includes: a first heat radiation portion and a second heat radiation portion disposed to face each other sandwiching the accommodation space; a first opening that is disposed at a side portion to the first heat radiation portion and through which the terminal passes; a sealing surface formed to surround the first opening; and a reference surface disposed at a side portion to the second heat radiation portion, and the reference surface is formed on a surface opposite to a surface on which the sealing surface of the case is disposed such that, when projection is performed from a vertical direction of the reference surface, a projection of the reference surface and a projection of the sealing surface overlap each other.
1. A power semiconductor module comprising:
a circuit body including a power semiconductor device and a terminal; and
a case forming an accommodation space for accommodating the circuit body, wherein
the case includes: a first heat radiation portion disposed to face the accommodation space; a second heat radiation portion disposed to face the first heat radiation portion sandwiching the accommodation space; a first opening that is disposed at a side portion to the first heat radiation portion and through which the terminal passes; a sealing surface formed to surround the first opening; and a reference surface disposed at a side portion to the second heat radiation portion, and
the reference surface is formed on a surface opposite to a surface on which the sealing surface of the case is disposed such that, when projection is performed from a vertical direction of the reference surface, a projection of the reference surface and a projection of the sealing surface overlap each other.
2. The power semiconductor module according to claim 1 , wherein
the case includes a case frame including an opening, and a heat radiation base made of metal,
the opening of the case frame is closed by the heat radiation base,
the heat radiation base forms the second heat radiation portion of the case, and
a bonding portion between the case frame and the heat radiation base is formed on the reference surface.
3. An electric power conversion device comprising:
the power semiconductor module according to claim 1 ;
a flow path forming body forming a flow path space through which a refrigerant flows, and a flow path opening connected to the flow path space; and
a lid closing the flow path opening, wherein
the power semiconductor module is disposed in the flow path space,
the lid closes the flow path opening to cover the sealing surface and the first heat radiation portion, and
the flow path forming body includes a receiving surface being in contact with the reference surface of the power semiconductor module.
4. A power semiconductor module that is the electric power conversion device according to claim 3 , wherein
the terminal includes a DC terminal for transmitting DC, and an AC terminal for transmitting AC, and
the DC terminal and the AC terminal pass through the first opening.
5. The power semiconductor module according to claim 4 , wherein
the terminal includes the DC terminal for transmitting DC, and the AC terminal for transmitting AC,
the case includes a second opening disposed at an opposite side to the first opening sandwiching the first heat radiation portion,
the DC terminal passes through the first opening, and
the DC terminal passes through the second opening.
6. An electric power conversion device comprising:
the power semiconductor module according to any one of claim 2 ;
a flow path forming body forming a flow path space through which a refrigerant flows, and a flow path opening connected to the flow path space; and
a lid closing the flow path opening, wherein
the power semiconductor module is disposed in the flow path space,
the lid closes the flow path opening to cover the sealing surface and the first heat radiation portion, and
the flow path forming body includes a receiving surface being in contact with the reference surface of the power semiconductor module.
7. A power semiconductor module that is the electric power conversion device according to claim 6 , wherein
the terminal includes a DC terminal for transmitting DC,
and an AC terminal for transmitting AC, and
the DC terminal and the AC terminal pass through the first opening.
8. The power semiconductor module according to claim 7 , wherein
the terminal includes the DC terminal for transmitting DC, and the AC terminal for transmitting AC,
the case includes a second opening disposed at an opposite side to the first opening sandwiching the first heat radiation portion,
the DC terminal passes through the first opening, and
the DC terminal passes through the second opening.