Paralleling power switches using a differential mode choke in the gate drive loop
In one aspect, a device includes a first power switch having a first gate, a second power switch paralleled with the first power switch and having a second gate, a gate driver to output a gate drive signal to drive both the first gate and the second gate, a first conduction path to couple the gate drive signal to the first gate, a second conduction path to couple the gate drive signal to the second gate, and a distribution choke to distribute the gate drive signal to the first and second power switches. The distribution choke has a first winding disposed in the first conduction path and a second winding disposed in the second conduction path. The distribution choke is coupled in a differential mode.
1. A power module, comprising:
a first power switch having a first gate;
a second power switch paralleled with the first power switch and having a second gate;
a third power switch paralleled with the first and the second power switches and having a third gate;
a terminal coupled to receive a gate drive signal from a gate driver;
a first conduction path to couple the gate drive signal to the first gate;
a second conduction path to couple the gate drive signal to the second gate;
a third conduction path to couple the gate drive signal to the third gate;
a distribution choke to distribute the gate drive signal to the first and second power switches, the distribution choke having a first winding disposed in the first conduction path and a second winding disposed in the second conduction path, the distribution choke coupled in a differential mode;
a second distribution choke to distribute the gate drive signal, the second distribution choke comprising a third winding disposed in the first conduction path and a fourth winding disposed in the third conduction path; and
a third distribution choke to distribute the gate drive signal, the third distribution choke comprising a fifth winding disposed in the second conduction path.
2. The power module of claim 1 , wherein the third distribution choke comprises a sixth winding disposed in the third conduction path.
3. The power module claim 1 , wherein all parts are integrated in one power module.
4. The power module of claim 1 , wherein the first and second power switches are IGBTs.
5. The power module of claim 1 , wherein the first and second power switches are MOSFETs.
6. The power module of claim 1 , wherein the first and second power switches are HEMTs.
7. The power module of claim 1 , wherein:
the first conduction path comprises a first gate resistance; and
the second conduction path comprises a second gate resistance.
8. The power module of claim 1 , wherein:
the first conduction path and the second conduction path comprise a common gate resistance.
9. The power module of claim 1 , wherein:
the gate driver is a common gate driver including a common power switch driver, the gate driver including one or more gate signal outputs or with separated Hi/Lo gate outputs.
10. A power module, comprising:
a first power switch having a first gate;
a second power switch paralleled with the first power switch and having a second gate;
a first conduction path to couple a gate drive signal to the first gate;
a second conduction path to couple the gate drive signal to the second gate; and
a distribution choke to distribute the gate drive signal to the first and second power switches, the distribution choke having a first winding disposed in the first conduction path and a second winding disposed in the second conduction path, the distribution choke coupled in a differential mode,
wherein the power module comprises an equal number of paralleled power switches and chokes, and
wherein each of the conduction paths includes at least two windings.
11. A device comprising:
a first IGBT having a first gate;
a second IGBT coupled in parallel with the first IGBT and having a second gate;
a third IGBT coupled in parallel with the first and the second IGBTs and having a third gate;
an IGBT driver to output a gate drive signal;
a first conduction path to couple the gate drive signal to the first gate;
a second conduction path to couple the gate drive signal to the second gate;
a third conduction path to couple the gate drive signal to the third gate;
a distribution choke to distribute the gate drive signal to the first and second IGBTs, the distribution choke having a first winding disposed in the first conduction path and a second winding disposed in the second conduction path, the distribution choke coupled in a differential mode;
a second distribution choke to distribute the gate drive signal, the second distribution choke comprising a third winding disposed in the first conduction path and a fourth winding disposed in the third conduction path; and
a third distribution choke to distribute the gate drive signal, the third distribution choke comprising a fifth winding disposed in the second conduction path.
12. The device of claim 11 , wherein the third distribution choke comprises a sixth winding disposed in the third conduction path.
13. The device of claim 11 , wherein:
the first conduction path comprises a first gate resistance; and
the second conduction path comprises a second gate resistance.
14. The device of claim 11 , wherein:
the first conduction path and the second conduction path comprise one or more first conductors between the IGBT driver and the distribution choke;
the first conduction path comprises one or more second conductors between the distribution choke and the first gate;
the second conduction path comprises one or more third conductors between the distribution choke and the second gate;
the one or more second conductors are longer than the one or more first conductors; and
the one or more third conductors are longer than the one or more first conductors.
15. A power module comprising:
a plurality of power switches comprising a first power switch, a second power switch, and a third power switch;
a plurality of parallel conduction paths comprising:
a first conduction path to a gate of the first power switch;
a second conduction path to a gate of the second power switch; and
a third conduction path to a gate of the third power switch;
a plurality of distribution chokes comprising:
a first distribution choke comprising a first winding disposed in the first conduction path and a second winding disposed in the second conduction path;
a second distribution choke comprising a third winding disposed in the second conduction path and a fourth winding disposed in the third conduction path; and
a third distribution choke comprising a fifth winding disposed in the third conduction path and a sixth winding disposed in the first conduction path.
16. The power module of claim 15 , wherein:
the first conduction path is coupled from a gate driver output to the gate of the first power switch;
the second conduction path is coupled from the gate driver output to the gate of the second power switch; and
the third conduction path is coupled from the gate driver output to the gate of the third power switch.
17. The power module of claim 15 , wherein each of the plurality of power switches comprises an IGBT.
18. The power module of claim 15 , wherein each of the plurality of power switches comprises a MOSFET.
19. The power module of claim 15 , wherein each of the plurality of power switches comprises a HEMT.
20. The power module of claim 15 , wherein each of the plurality of conduction paths comprises at least one discrete capacitor.
21. The power module of claim 15 , wherein at least one of the plurality of power switches comprises an IGBT.
22. The power module of claim 15 , wherein at least one of the plurality of power switches comprises a MOSFET.
23. The power module of claim 15 , wherein at least one of the plurality of power switches comprises a HEMT.