Radiation-emitting semiconductor device

1. A radiation-emitting semiconductor device having a first semiconductor layer sequence, a second semiconductor layer sequence, a first electrode and a second electrode, wherein

the first electrode is arranged between the first semiconductor layer sequence and the second semiconductor layer sequence and the second semiconductor layer sequence is arranged between the first electrode and the second electrode,

the first semiconductor layer sequence includes a first semiconductor layer, a second semiconductor layer and an active region arranged between the first semiconductor layer and the second semiconductor layer, said active region being designed to generate radiation of a first wavelength,

the second semiconductor layer sequence comprises a quantum well structure having a quantum layer structure and a barrier layer structure and is designed to generate incoherent radiation of a second wavelength by absorbing the radiation of the first wavelength,

an electrical field can be generated in the second semiconductor layer sequence by the first electrode and the second electrode, and

the first semiconductor layer sequence and the second semiconductor layer sequence are integrated monolithically into the semiconductor device,

wherein the first semiconductor layer sequence, the first electrode, the second semiconductor layer sequence, and the second electrode are stacked directly one on top of the other on a substrate.

2. The radiation-emitting semiconductor device according to claim 1 , wherein the radiation-emitting semiconductor device comprises a radiation exit surface and the second semiconductor layer sequence is arranged between the first semiconductor layer sequence and the radiation exit surface.

3. The radiation-emitting semiconductor device according to claim 1 , wherein the first electrode is transparent at least for radiation of the first wavelength and the second electrode is transparent at least for radiation of the second wavelength.

4. The radiation-emitting semiconductor device according to claim 1 , wherein means for limiting a current flowing through the second semiconductor layer sequence are provided between the first electrode and the second electrode.

5. The radiation-emitting semiconductor device according to claim 1 , wherein the first electrode or the second electrode is electrically insulated from the second semiconductor layer sequence.

6. The radiation-emitting semiconductor device according to claim 1 , wherein the second semiconductor layer sequence includes layers of undoped semiconductor material.

7. The radiation-emitting semiconductor device according to claim 1 , wherein the first electrode or the second electrode in each case comprise a doped semiconductor material and have different conductivity types.

8. The radiation-emitting semiconductor device according to claim 1 , wherein the second semiconductor layer sequence comprises, on a surface facing the second electrode, a multiplicity of V defects.

9. The radiation-emitting semiconductor device according to claim 8 , wherein the V defects are filled with a doped semiconductor material.

10. The radiation-emitting semiconductor device according to claim 1 , wherein the second semiconductor layer of the first semiconductor layer sequence is connected to the first electrode in an electrically conductive manner.

11. The radiation-emitting semiconductor device according to claim 1 , wherein the first semiconductor layer and the second semiconductor layer of the first semiconductor layer sequence are electrically insulated from the first electrode.

12. The radiation-emitting semiconductor device according to claim 1 , wherein the first semiconductor layer sequence and the second semiconductor layer sequence are attached to one another via a connecting element.

13. A method for generating radiation using a radiation-emitting semiconductor device according to claim 1 , comprising the steps of:

generating radiation of a first wavelength in the first semiconductor layer sequence; and

at least partly absorbing the radiation of the first wavelength;

generating incoherent radiation of a second wavelength in the quantum layer structure,

wherein the second wavelength is adjusted or adapted by way of a voltage applied between the first electrode and the second electrode.

14. The method according to claim 13 , wherein the voltage applied between the first electrode and the second electrode is greater than 1 V.

15. The radiation-emitting semiconductor device according to claim 1 , wherein the second semiconductor layer sequence is in direct contact with a first side of the first electrode, a second side of the first electrode is in direct contact with a first side of the first semiconductor layer sequence, and a second side of the first semiconductor layer sequence is in a direct contact with the substrate.

16. The radiation-emitting semiconductor device according to claim 1 , wherein the second semiconductor layer sequence is in direct contact with a first side of the first electrode, the radiation-emitting semiconductor device further comprising:

a connecting element,

wherein a second side of the first electrode is in direct contact with a first side of the connecting element, a second side of the connecting element is in direct contact with a first side of the first semiconductor layer sequence.

17. The radiation-emitting semiconductor device according to claim 1 , wherein the substrate comprises sapphire.

18. A radiation-emitting semiconductor device having a first semiconductor layer sequence, a second semiconductor layer sequence, a first electrode and a second electrode, wherein

the first electrode is arranged between the first semiconductor layer sequence and the second semiconductor layer sequence and the second semiconductor layer sequence is arranged between the first electrode and the second electrode,

the first semiconductor layer sequence includes a first semiconductor layer, a second semiconductor layer and an active region arranged between the first semiconductor layer and the second semiconductor layer, said active region being designed to generate radiation of a first wavelength,

the second semiconductor layer sequence comprises a quantum well structure having a quantum layer structure and a barrier layer structure and is designed to generate incoherent radiation of a second wavelength by absorbing the radiation of the first wavelength,

an electrical field can be generated in the second semiconductor layer sequence by the first electrode and the second electrode, and

the first semiconductor layer sequence and the second semiconductor layer sequence are attached to one another via a connecting element, which is arranged between the first semiconductor layer sequence and the second semiconductor layer sequence,

wherein the first semiconductor layer sequence, the second semiconductor layer sequence, the first electrode and the second electrode are stacked on top of one another on a substrate; and

the second semiconductor layer sequence is in direct contact with a first side of the first electrode, a second side of the first electrode is in direct contact with a first side of the connecting element, and a second side of the connecting element is in direct contact with a first side of the first semiconductor layer sequence.

19. The radiation-emitting semiconductor device according to claim 18 , wherein the connecting element is arranged between the first semiconductor layer sequence and the second semiconductor layer sequence.

20. The radiation-emitting semiconductor device according to claim 18 , wherein the second semiconductor layer sequence is designed such that the second wavelength is adjustable or adaptable by way of the electrical field generated by the first electrode and the second electrode.

21. The radiation-emitting semiconductor device according to claim 18 , wherein the substrate comprises sapphire.