Optoelectronics semiconductor component
View Patent ↗The invention relates to an optoelectronic semiconductor component ( 10 ) comprising a substrate ( 1 ), a first insulator layer ( 2 ), and a second insulator layer ( 3 ). Furthermore, the semiconductor component ( 10 ) comprises an organic semiconductor layer sequence ( 4 ) having an active area ( 4 a) which, during operation, generates or receives light, a first electrode ( 5 ) and a second electrode ( 6 ), and encapsulation ( 7 ) which covers the organic semiconductor layer sequence ( 4 ) and the first insulator layer ( 2 ) completely and covers the second insulator layer ( 3 ) and the first electrode ( 5 ) or the second electrode ( 6 ) partially. Here, the first electrode ( 5 ) is arranged between the organic semiconductor layer sequence ( 4 ) and the first insulator layer ( 2 ), and the second electrode ( 6 ) is arranged on the organic semiconductor layer sequence ( 4 ), wherein the first electrode ( 5 ) and/or the second electrode ( 6 ) is/are at least partly arranged on the second insulator layer ( 3 ).
1. An optoelectronic semiconductor component comprising:
a substrate, the substrate being electrically conductive or is provided with an electrically conductive layer,
a first insulator layer and a second insulator layer,
an organic semiconductor layer sequence having an active region, which generates or receives light during operation,
a first electrode and a second electrode, wherein the first electrode or the second electrode is electrically connected to the substrate, and
an encapsulation, which completely covers the organic semiconductor layer sequence and the first insulator layer and partly covers the second insulator layer and the first electrode or the second electrode,
wherein
the first electrode is arranged between the organic semiconductor layer sequence and the first insulator layer, the second electrode is arranged on the organic semiconductor layer sequence and wherein the first electrode and/or the second electrode is arranged at least partly on the second insulator layer, and
wherein the second insulator layer is arranged on a top side of the substrate and the first insulator layer is arranged on the second insulator layer, wherein the first electrode or the second electrode is electrically connected to the substrate by means of a through-connection through the second insulator layer.
2. The optoelectronic semiconductor component according to claim 1 , wherein the first insulator layer and the second insulator layer comprise different materials.
3. The optoelectronic semiconductor component according to claim 1 , wherein the second insulator layer comprises or consists of an inorganic material.
4. The optoelectronic semiconductor component according to claim 1 , wherein the first insulator layer comprises an organic polymer and the second insulator layer comprises or consists of an inorganic material.
5. The optoelectronic semiconductor component according to claim 1 , wherein the second insulator layer comprises or consists of an oxide or a nitride.
6. The optoelectronic semiconductor component according to claim 1 , wherein the substrate comprises glass and a layer of ITO or metal is arranged on the glass.
7. The optoelectronic semiconductor component according to claim 1 , wherein the substrate is in the form of a flexible metal film.
8. The optoelectronic semiconductor component according to claim 1 , wherein a metallization is arranged on the first electrode or on the second electrode for external contacting.
9. The optoelectronic semiconductor component according to claim 1 , wherein the second insulator layer is arranged on a top side of the substrate over the entire area.
10. The optoelectronic semiconductor component according to claim 1 , wherein the encapsulation comprises a thin-film encapsulation and a protective lacquer, wherein the protective lacquer outwardly seals the semiconductor component.