Arrangement for oscillation dampening
Power electronics device, such as a frequency converter, comprising power units (REC 1 , INU 1 , INU 2 , CDC 1 ), a metal frame ( 31 ) and a DC bus arrangement in which the power units are connected. The power units may be assembled inside the metal frame ( 31 ) wherein the shape of the metal frame is elongated with rectangular cross-sectional shape, consisting of a bottom part ( 33 ) and from that essentially vertical oriented side wall parts ( 32 ). The DC bus arrangement is arranged on top of the bottom part ( 33 ) of the metal frame ( 31 ) and separated by an insulator layer (S 1 ) from the metal frame ( 31 ). The DC bus arrangement comprises a first DC bus current conductor (DC+) and a second DC bus current conductor (DC−) which are arranged apart from each other. The DC bus current conductors (DC+, DC−) have a flat shape in such a way that their thickness dimension is essentially shorter than their width dimension.
1. A power electronics device, such as a frequency converter, comprising power units (REC 1 , INU 1 , INU 2 , C DC1 ), a metal frame and a DC bus arrangement in which the power units are connected, wherein the power units are assembled inside the metal frame, and wherein the shape of the metal frame is elongated with rectangular cross-sectional shape, consisting of a bottom part and from that essentially vertical oriented side wall parts, wherein the DC bus arrangement is arranged on top of the bottom part of the metal frame and separated by an insulator layer (Si) from the metal frame, and the DC bus arrangement comprises a first DC bus current conductor (DC+) and a second DC bus current conductor (DC−) which are arranged side by side and apart from each other, wherein the DC bus current conductors (DC+, DC−) have a flat shape in such a way that their thickness dimension is essentially shorter than their width dimension;
and wherein the first DC bus current conductor (DC+) and the second DC bus current conductor (DC−) are only separated from the bottom part of the metal frame by a thickness of the insulator layer (Si).
2. The power electronics device according to claim 1 , wherein
the insulator layer (S 1 ) is arranged such that one common insulator sheet is arranged under both DC bus current conductors (DC+, DC−) throughout the frame or separate insulator sheets are arranged under each DC bus current conductors (DC+, DC−).
3. The power electronics device according to claim 1 , wherein the thickness of the insulator layer is minimum what is required to fulfill the requirements for sufficient mechanical strength and adequate insulation.
4. The power electronics device according to claim 1 , wherein the thickness of the insulation layer (S 1 ) is less than 1 mm.
5. The power electronics device according to claim 1 ,
wherein switching frequency of inverter unit (INU 1 , INU 2 ) included in the power units is set to a value where the switching frequency or its multiple does not meet the resonance frequency peak of the DC bus arrangement.
6. The power electronics device according to claim 1 , wherein the first DC bus current conductor (DC+) and the second DC bus current conductor (DC−) are busbars.
7. The power electronics device according to claim 1 , wherein the first DC bus current conductor (DC+) and the second DC bus current conductor (DC−) are arranged to extend from one end of the metal frame to the other end of the metal frame.
8. The power electronics device according to claim 1 , wherein the first DC bus current conductor (DC+) and the second DC bus current conductor (DC−) comprise connection parts for power modules.
9. The power electronics device according to claim 2 , wherein the thickness of the insulation layer (S 1 ) is less than 1 mm.
10. The power electronics device according to claim 3 , wherein the thickness of the insulation layer (S 1 ) is less than 1 mm.
11. The power electronics device according to claim 2 , wherein the first DC bus current conductor (DC+) and the second DC bus current conductor (DC−) are busbars.
12. The power electronics device according to claim 3 , wherein the first DC bus current conductor (DC+) and the second DC bus current conductor (DC−) are busbars.
13. The power electronics device according to claim 4 , wherein the first DC bus current conductor (DC+) and the second DC bus current conductor (DC−) are busbars.
14. The power electronics device according to claim 5 , wherein the first DC bus current conductor (DC+) and the second DC bus current conductor (DC−) are busbars.
15. The power electronics device according to claim 2 , wherein the first DC bus current conductor (DC+) and the second DC bus current conductor (DC−) are arranged to extend from one end of the metal frame to the other end of the metal frame.
16. The power electronics device according to claim 3 , wherein the first DC bus current conductor (DC+) and the second DC bus current conductor (DC−) are arranged to extend from one end of the metal frame to the other end of the metal frame.
17. The power electronics device according to claim 4 , wherein the first DC bus current conductor (DC+) and the second DC bus current conductor (DC−) are arranged to extend from one end of the metal frame to the other end of the metal frame.
18. The power electronics device according to claim 5 , wherein the first DC bus current conductor (DC+) and the second DC bus current conductor (DC−) are arranged to extend from one end of the metal frame to the other end of the metal frame.
19. The power electronics device according to claim 6 , wherein the first DC bus current conductor (DC+) and the second DC bus current conductor (DC−) are arranged to extend from one end of the metal frame to the other end of the metal frame.
20. The power electronics device according to claim 2 , wherein the thickness of the insulator layer is minimum what is required to fulfill the requirements for sufficient mechanical strength and adequate insulation.