Differential output circuit

1. A differential output circuit, comprising:

a first input transistor and a second input transistor that receive respective differential input signals, the respective differential input signals having mutually inverted phases; and

n stages of first cascode transistors (n being a natural number greater than or equal to 2) connected in cascade manner to the first input transistor and n stages of second cascode transistors connected in cascade manner to the second input transistor,

wherein when the first cascode transistor connected to a drain of the first input transistor is a first stage first cascode transistor, the first cascode transistor connected farthest from the first input transistor is an n-th stage first cascode transistor, the second cascode transistor connected to a drain of the second input transistor is a first stage second cascode transistor, and the second cascode transistor connected farthest from the second input transistor is an n-th stage second cascode transistor, with respect to each of the n stages, a gate of a k-th stage of the first cascode transistors (1≤k≤n) and a gate of a k-th stage of the second cascode transistors are connected, and

the differential output circuit further comprises:

a first output terminal connected to a drain of the n-th stage first cascode transistor;

a second output terminal connected to a drain of the n-th stage second cascode transistor;

an intermediate potential generating circuit that supplies an intermediate potential of a potential of the first output terminal and a potential of the second output terminal to a gate of the n-th stage first cascode transistor and a gate of the n-th stage second cascode transistor;

a dividing circuit that supplies divided potentials resulting from the intermediate potential being divided into (n−1) stages to respective gates of (n−1)-th through first stages of the first cascode transistors in descending order of potential, and

a potential supplied to back gates of the first input transistor and the second input transistor is different from a potential supplied to back gates of at least one of the first cascode transistors other than the first stage first cascode transistor and at least one of the second cascode transistors other than the first stage second cascode transistor.

2. The differential output circuit according to claim 1 , further comprising:

a first buffer and a second buffer that receive input signals and output the respective differential input signals to the first input transistor and the second input transistor,

wherein power supply voltage for driving the first buffer and the second buffer has a potential that is lower than the potentials of the first output terminal and the second output terminal.

3. The differential output circuit according to claim 1 ,

wherein the first input transistor, the second input transistor, the n stages of first cascode transistors, and the n stages of second cascode transistors are N-type MOS transistors,

the differential output circuit further comprises a P-type substrate,

the substrate includes diffusion regions forming sources and drains of each of the first input transistor, the second input transistor, the n stages of first cascode transistors, and the n stages of second cascode transistors, and

a potential separation N-well that is floating is formed below the diffusion regions of the first input transistor, the second input transistor, the n stages of first cascode transistors, and the n stages of second cascode transistors.

4. The differential output circuit according to claim 1 ,

wherein the first input transistor, the second input transistor, the n stages of first cascode transistors, and the n stages of second cascode transistors are N-type MOS transistors,

the differential output circuit further comprises a P-type substrate,

the substrate includes diffusion regions forming sources and drains of each of the first input transistor, the second input transistor, the n stages of first cascode transistors, and the n stages of second cascode transistors,

a P-type well supplied with source potentials of the first input transistor and the second input transistor is formed below the diffusion regions of the first input transistor and the second input transistor,

a k-th first P-type well supplied with a source potential of the k-th stage of the first cascode transistors (1≤k≤n) is formed below the diffusion regions of the k-th stage of the first cascode transistors,

a k-th second P-type well supplied with a source potential of the k-th stage of the second cascode transistors (1≤k≤n) is formed below the diffusion regions of the k-th stage of the second cascode transistors,

first through n-th ones of the first P-type wells are all separated from each other, and

first through n-th ones of the second P-type wells are all separated from each other.

5. The differential output circuit according to claim 1 ,

wherein the first input transistor, the second input transistor, the n stages of first cascode transistors, and the n stages of second cascode transistors are N-type MOS transistors,

the differential output circuit further comprises a P-type substrate,

the substrate includes diffusion regions forming sources and drains of each of the first input transistor, the second input transistor, the n stages of first cascode transistors, and the n stages of second cascode transistors,

a P-type well supplied with source potentials of the first input transistor and the second input transistor is formed below the diffusion regions of the first input transistor and the second input transistor,

when a value obtained by dividing a potential difference between a drain potential of the n-th stage first cascode transistor and a source potential of the first stage first cascode transistor by a transistor breakdown voltage is expressed as X (X being a natural number less than or equal to n; decimals of X are rounded up to a next natural number),

the P-type well below the diffusion regions of the first input transistor and the second input transistor is shared among at least Y=n/X stages of cascode transistors (Y being a natural number less than or equal to n; decimals of Y are truncated),

a W-th (W being a natural number in a range of from 1 to X) first P-type well supplied with a source potential of a [(W−1)×(Y+1)]-th stage of the first cascode transistors is formed below the diffusion regions of [W×Y]-th through [(W−1)×(Y+1)]-th stages of the first cascode transistors, and

a W-th (W being a natural number in a range of from 1 to X) second P-type well supplied with a source potential of a [(W−1)×(Y+1)]-th stage of the second cascode transistors is formed below the diffusion regions of [W×Y]-th through [(W−1)×(Y+1)]-th stages of the second cascode transistors.

6. The differential output circuit according to claim 1 ,

wherein the dividing circuit includes:

a power supply voltage detector that detects a power supply voltage for driving a first buffer and a second buffer that receive input signals and output the respective differential input signals to the first input transistor and the second input transistor; and

a variable resistance unit configured to adjust the divided potentials supplied to gates of the first cascode transistors and the second cascode transistors, when the power supply voltage detector detects that the power supply voltage is not being supplied or when the differential output circuit is powered-down.

7. A differential output circuit, comprising:

a first input transistor and a second input transistor that receive respective differential input signals, the respective differential input signals having mutually inverted phases; and

n stages of first cascode transistors (n being a natural number greater than or equal to 2) cascode connected to the first input transistor and n stages of second cascode transistors cascode connected to the second input transistor,

wherein when the first cascode transistor connected to a drain of the first input transistor is a first stage first cascode transistor, the first cascode transistor connected farthest from the first input transistor is an n-th stage first cascode transistor, the second cascode transistor connected to a drain of the second input transistor is a first stage second cascode transistor, and the second cascode transistor connected farthest from the second input transistor is an n-th stage second cascode transistor, with respect to each of the n stages, a gate of a k-th stage of the first cascode transistors (1≤k≤n) and a gate of a k-th stage of the second cascode transistors are connected, and

the differential output circuit further comprises:

a first output terminal connected to a drain of the n-th stage first cascode transistor;

a second output terminal connected to a drain of the n-th stage second cascode transistor;

an intermediate potential generating circuit that supplies an intermediate potential of a potential of the first output terminal and a potential of the second output terminal to a gate of the n-th stage first cascode transistor and a gate of the n-th stage second cascode transistor; and

a dividing circuit that supplies divided potentials resulting from the intermediate potential being divided into (n−1) stages to respective gates of (n−1)-th through first stages of the first cascode transistors in descending order of potential, and

wherein the first input transistor, the second input transistor, the n stages of first cascode transistors, and the n stages of second cascode transistors are N-type MOS transistors,

the differential output circuit further comprises a P-type substrate,

the substrate includes diffusion regions forming sources and drains of each of the first input transistor, the second input transistor, the n stages of first cascode transistors, and the n stages of second cascode transistors, and

a potential separation N-well that is floating is formed below the diffusion regions of the first input transistor, the second input transistor, the n stages of first cascode transistors, and the n stages of second cascode transistors.

8. A differential output circuit, comprising:

a first input transistor and a second input transistor that receive respective differential input signals, the respective differential input signals having mutually inverted phases; and

n stages of first cascode transistors (n being a natural number greater than or equal to 2) cascode connected to the first input transistor and n stages of second cascode transistors cascode connected to the second input transistor,

wherein when the first cascode transistor connected to a drain of the first input transistor is a first stage first cascode transistor, the first cascode transistor connected farthest from the first input transistor is an n-th stage first cascode transistor, the second cascode transistor connected to a drain of the second input transistor is a first stage second cascode transistor, and the second cascode transistor connected farthest from the second input transistor is an n-th stage second cascode transistor, with respect to each of the n stages, a gate of a k-th stage of the first cascode transistors (1≤k≤n) and a gate of a k-th stage of the second cascode transistors are connected, and

the differential output circuit further comprises:

a first output terminal connected to a drain of the n-th stage first cascode transistor;

a second output terminal connected to a drain of the n-th stage second cascode transistor;

an intermediate potential generating circuit that supplies an intermediate potential of a potential of the first output terminal and a potential of the second output terminal to a gate of the n-th stage first cascode transistor and a gate of the n-th stage second cascode transistor; and

a dividing circuit that supplies divided potentials resulting from the intermediate potential being divided into (n−1) stages to respective gates of (n−1)-th through first stages of the first cascode transistors in descending order of potential, and

wherein the first input transistor, the second input transistor, the n stages of first cascode transistors, and the n stages of second cascode transistors are N-type MOS transistors,

the differential output circuit further comprises a P-type substrate,

the substrate includes diffusion regions forming sources and drains of each of the first input transistor, the second input transistor, the n stages of first cascode transistors, and the n stages of second cascode transistors,

a P-type well supplied with source potentials of the first input transistor and the second input transistor is formed below the diffusion regions of the first input transistor and the second input transistor,

a k-th first P-type well supplied with a source potential of the k-th stage of the first cascode transistors (1≤k≤n) is formed below the diffusion regions of the k-th stage of the first cascode transistors,

a k-th second P-type well supplied with a source potential of the k-th stage of the second cascode transistors (1≤k≤n) is formed below the diffusion regions of the k-th stage of the second cascode transistors,

first through n-th ones of the first P-type wells are all separated from each other, and

first through n-th ones of the second P-type wells are all separated from each other.

9. A differential output circuit, comprising:

a first input transistor and a second input transistor that receive respective differential input signals, the respective differential input signals having mutually inverted phases; and

n stages of first cascode transistors (n being a natural number greater than or equal to 2) cascode connected to the first input transistor and n stages of second cascode transistors cascode connected to the second input transistor,

wherein when the first cascode transistor connected to a drain of the first input transistor is a first stage first cascode transistor, the first cascode transistor connected farthest from the first input transistor is an n-th stage first cascode transistor, the second cascode transistor connected to a drain of the second input transistor is a first stage second cascode transistor, and the second cascode transistor connected farthest from the second input transistor is an n-th stage second cascode transistor, with respect to each of the n stages, a gate of a k-th stage of the first cascode transistors (1≤k≤n) and a gate of a k-th stage of the second cascode transistors are connected, and

the differential output circuit further comprises:

a first output terminal connected to a drain of the n-th stage first cascode transistor;

a second output terminal connected to a drain of the n-th stage second cascode transistor;

an intermediate potential generating circuit that supplies an intermediate potential of a potential of the first output terminal and a potential of the second output terminal to a gate of the n-th stage first cascode transistor and a gate of the n-th stage second cascode transistor; and

a dividing circuit that supplies divided potentials resulting from the intermediate potential being divided into (n−1) stages to respective gates of (n−1)-th through first stages of the first cascode transistors in descending order of potential, and

wherein the first input transistor, the second input transistor, the n stages of first cascode transistors, and the n stages of second cascode transistors are N-type MOS transistors,

the differential output circuit further comprises a P-type substrate,

the substrate includes diffusion regions forming sources and drains of each of the first input transistor, the second input transistor, the n stages of first cascode transistors, and the n stages of second cascode transistors,

a P-type well supplied with source potentials of the first input transistor and the second input transistor is formed below the diffusion regions of the first input transistor and the second input transistor,

when a value obtained by dividing a potential difference between a drain potential of the n-th stage first cascode transistor and a source potential of the first stage first cascode transistor by a transistor breakdown voltage is expressed as X (X being a natural number less than or equal to n; decimals of X are rounded up to a next natural number),

the P-type well below the diffusion regions of the first input transistor and the second input transistor is shared among at least Y=n/X stages of cascode transistors (Y being a natural number less than or equal to n; decimals of Y are truncated),

a W-th (W being a natural number in a range of from 1 to X) first P-type well supplied with a source potential of a [(W−1)×(Y+1)]-th stage of the first cascode transistors is formed below the diffusion regions of [W×Y]-th through [(W−1)×(Y+1)]-th stages of the first cascode transistors, and

a W-th (W being a natural number in a range of from 1 to X) second P-type well supplied with a source potential of a [(W−1)×(Y+1)]-th stage of the second cascode transistors is formed below the diffusion regions of [W×Y]-th through [(W−1)×(Y+1)]-th stages of the second cascode transistors.

10. A differential output circuit, comprising:

a first input transistor and a second input transistor that receive respective differential input signals, the respective differential input signals having mutually inverted phases; and

n stages of first cascode transistors (n being a natural number greater than or equal to 2) cascode connected to the first input transistor and n stages of second cascode transistors cascode connected to the second input transistor,

wherein when the first cascode transistor connected to a drain of the first input transistor is a first stage first cascode transistor, the first cascode transistor connected farthest from the first input transistor is an n-th stage first cascode transistor, the second cascode transistor connected to a drain of the second input transistor is a first stage second cascode transistor, and the second cascode transistor connected farthest from the second input transistor is an n-th stage second cascode transistor, with respect to each of the n stages, a gate of a k-th stage of the first cascode transistors (1≤k≤n) and a gate of a k-th stage of the second cascode transistors are connected, and

the differential output circuit further comprises:

a first output terminal connected to a drain of the n-th stage first cascode transistor;

a second output terminal connected to a drain of the n-th stage second cascode transistor;

an intermediate potential generating circuit that supplies an intermediate potential of a potential of the first output terminal and a potential of the second output terminal to a gate of the n-th stage first cascode transistor and a gate of the n-th stage second cascode transistor; and

a dividing circuit that supplies divided potentials resulting from the intermediate potential being divided into (n−1) stages to respective gates of (n−1)-th through first stages of the first cascode transistors in descending order of potential, and

wherein the dividing circuit includes:

a power supply voltage detector that detects a power supply voltage for driving a first buffer and a second buffer that receive input signals and output the respective differential input signals to the first input transistor and the second input transistor; and

a variable resistance unit configured to adjust the divided potentials supplied to gates of the first cascode transistors and the second cascode transistors, when the power supply voltage detector detects that the power supply voltage is not being supplied or when the differential output circuit is powered-down.