Optoelectronic semiconductor component, optoelectronic arrangement and method for producing an optoelectronic semiconductor component

1. An optoelectronic semiconductor component comprising:

an optoelectronic semiconductor chip comprising

an electrically conductive carrier,

an active part, which contains epitaxially grown layers, and

an intermediate layer, which is arranged between the carrier and the active part and contains a solder material;

an electrical connection point, which at least partly covers an underside of the carrier,

wherein the electrical connection point comprises a first contact layer on a side facing towards the carrier, and

wherein the first contact layer contains or consists of aluminum; and

a molded body, which comprises an electrically insulating material and which at least partly surrounds the optoelectronic semiconductor chip laterally,

wherein the electrical connection point at least partly, and in particular completely, covers an underside of the molded body, and

wherein the first contact layer borders the underside of the molded body.

2. The optoelectronic semiconductor component according to claim 1 , wherein the carrier contains silicon or germanium or consists of silicon or germanium.

3. The optoelectronic semiconductor component according to claim 1 , wherein the carrier has a thickness of at least 50 μm.

4. The optoelectronic semiconductor component according to claim 1 , wherein the first contact layer has a thickness of between 20 nm and 5 μm.

5. The optoelectronic semiconductor component according to claim 1 , wherein the first contact layer has a thickness in a range of 100 nm to 200 nm.

6. The optoelectronic semiconductor component according to claim 1 , wherein the first contact layer has a thickness of at least 450 nm.

7. The optoelectronic semiconductor component according to claim 1 , wherein the first contact layer contains silicon.

8. The optoelectronic semiconductor component according to claim 1 , further comprising:

a first further semiconductor chip, wherein the molded body at least partly surrounds the first further semiconductor chip laterally; and

a further electrical connection point, which at least partly covers the underside of the first further semiconductor chip and at least partly covers the underside of the molded body,

wherein the further electrical connection point comprises a second contact layer on a side facing towards the first further semiconductor chip and the molded body, and

wherein the second contact layer contains aluminum or consists of aluminum.

9. The optoelectronic semiconductor component according to claim 8 , wherein the first further semiconductor chip is in the form of a through-connection, which extends through the molded body in some areas.

10. The optoelectronic semiconductor component according to claim 8 , wherein the first further semiconductor chip is in the form of a protection diode and is connected in antiparallel with the optoelectronic semiconductor chip.

11. The optoelectronic semiconductor component according to claim 8 , further comprising:

a second further semiconductor chip,

wherein the molded body at least partly surrounds the second further semiconductor chip laterally,

wherein the electrical connection point at least partly covers the underside of the second further semiconductor chip, and

wherein the first contact layer borders an underside of the second further semiconductor chip.

12. The optoelectronic semiconductor component according to claim 11 , wherein the first further semiconductor chip is in the form of a through-connection, which extends through the molded body in some areas, and

wherein the second further semiconductor chip is in the form of a protection diode and is connected in antiparallel with the optoelectronic semiconductor chip.

13. The optoelectronic semiconductor component according to claim 1 , wherein the electrical connection point comprises at least one barrier layer, which is arranged on a side of the first contact layer facing away from the optoelectronic semiconductor chip, and

wherein the electrical connection point comprises a protective layer, which is arranged on a side of the at least one barrier layer facing away from the first contact layer.

14. The optoelectronic semiconductor component according to claim 1 , wherein the electrical connection point comprises a third contact layer, which is arranged on a side of the first contact layer facing away from the optoelectronic semiconductor chip,

wherein the third contact layer is produced by means of electroless deposition, and

wherein the first contact layer acts as a seed layer for the electroless deposition.

15. An optoelectronic arrangement comprising:

a connection carrier; and

at least one optoelectronic semiconductor component according to claim 1 ,

wherein between the connection carrier and the optoelectronic semiconductor component a connecting material is arranged, and

wherein the connecting material is in direct contact with the electrical connection point.

16. A method for producing an optoelectronic component comprising:

providing an electrically conductive carrier and an active part of an optoelectronic semiconductor chip;

connecting the carrier to the active part by means of a wafer bonding method;

applying a molded body which comprises an electrically insulating material around the optoelectronic semiconductor chip; and

applying a first contact layer on an underside of the carrier and an underside of the molded body,

wherein the first contact layer at least partly covers the underside of the carrier and the underside of the molded body,

wherein the first contact layer contains aluminum or consists of aluminum, and

wherein the first contact layer borders the underside of the molded body.

17. The method according to claim 16 , wherein the application of the first contact layer comprises physical vapor deposition.