High-K LTCC dielectric compositions and devices
View Patent ↗Electronic devices are produced from dielectric compositions comprising a mixture of precursor materials that, upon firing, forms a dielectric material comprising a barium-titanium-tungsten-silicon oxide.
1. A composition comprising a mixture of precursors that, upon firing, forms a dielectric material comprising:
from 57.0 wt % to 73.0 wt % BaO;
from 20.0 wt % to 40.0 wt % TiO 2 ;
from 0.5 wt % to 20.0 wt % WO 3 ;
from 0.05 wt % to 5.0 wt % SiO 2 ;
from 0.1 to 10.0 wt % Bi 2 O 3 ;
from 0.1 to 10.0 wt % ZnO;
from 0.01 to 4.0 wt % B 2 O 3 ;
from 0.01 to 5.0 wt % Li 2 O;
from 0.01 to 2.0 wt % CuO; and
from 0.01 to 2.0 wt % of at least one selected from the group consisting of MnO 2 , Mn 2 O 3 , and MnO.
2. A lead-free and cadmium-free dielectric paste comprising a solids portion, wherein the solids portion comprises the composition of claim 1 .
3. An electric or electronic component comprising, prior to firing, the composition of claim 1 , together with a conductive paste comprising:
60-90 wt % Ag+Pd+Pt+Au,
1-10 wt % of an additive selected from the group consisting of silicides of transition metals, carbides of transition metals, nitrides of transition metals, and borides of transition metals,
0.5-10 wt % of at least one glass frit,
10-40 wt % of an organic portion.
4. An electric or electronic component comprising, prior to firing, the lead-free and cadmium-free dielectric paste of claim 2 , together with a conductive paste comprising:
60-90 wt % Ag+Pd+Pt+Au,
1-10 wt % of an additive selected from the group consisting of silicides of transition metals, carbides of transition metals, nitrides of transition metals, and borides of transition metals,
0.5-10 wt % of at least one glass frit,
10-40 wt % of an organic portion.
5. A method of forming an electronic component comprising:
applying the composition of claim 1 to a substrate; and
firing the substrate at a temperature sufficient to sinter the composition.
6. The method of claim 5 , wherein the firing is conducted at a temperature of from 800° C. to 1000° C.
7. The method of claim 6 , wherein the firing is conducted in air.
8. A method of forming an electronic component comprising:
applying the paste of claim 2 to a substrate; and
firing the substrate at a temperature sufficient to sinter the paste.
9. The method of claim 8 , wherein the firing is conducted at a temperature of from 800° C. to 1000° C.
10. A composition comprising a mixture of precursors, the mixture of precursors comprising:
from 57.0 wt % to 73.0 wt % BaO;
from 20.0 wt % to 40.0 wt % TiO 2 ;
from 0.5 wt % to 20.0 wt % WO 3 ;
from 0.05 wt % to 5.0 wt % SiO 2 ;
from 0.1 to 10.0 wt % Bi 2 O 3 ;
from 0.1 to 10.0 wt % ZnO;
from 0.01 to 4.0 wt % H 3 BO 3 ;
from 0.01 to 5.0 wt % Li 2 CO 3 ;
from 0.01 to 2.0 wt % CuO; and
from 0.01 to 2.0 wt % of at least one selected from the group consisting of MnO 2 , Mn 2 O 3 , and MnO.
11. A lead-free and cadmium-free-dielectric paste comprising a solids portion, the solids portion comprising the composition of claim 10 .
12. An electric or electronic component comprising, prior to firing, the composition of claim 10 , together with a conductive paste comprising:
60-90 wt % Ag+Pd+Pt+Au,
1-10 wt % of an additive selected from the group consisting of silicides of transition metals, carbides of transition metals, nitrides of transition metals, and borides of transition metals,
0.5-10 wt % of at least one glass frit,
10-40 wt % of an organic portion.
13. A method of forming an electronic component comprising:
applying the composition of claim 10 to a substrate; and
firing the substrate at a temperature sufficient to sinter the composition.
14. The method of claim 13 , wherein the firing is conducted at a temperature of from 800° C. to 1000° C.
15. The method of claim 14 , wherein the firing is conducted in air.
16. A method of forming an electronic component comprising:
applying the paste of claim 11 to a substrate, and
firing the substrate at a temperature sufficient to sinter the paste.