Negative electrode active material for lithium secondary battery and method of preparing the same
The present specification relates to a negative electrode active material including an amorphous silicon-based composite represented by SiO a (0<a<1); and a carbon coating layer distributed on a surface of the silicon-based composite, and provides a negative electrode active material in which the crystal growth of crystalline silicon in a silicon-based composite prepared by thermal reduction with a metal reducing agent is suppressed in a state where a carbon coating layer is formed, and the ratio of silicon in the composite is high, and a method of preparing the same.
1. A method of preparing a negative electrode active material, comprising:
forming a carbon coating layer on a silicon-based precursor represented by SiO x (0<x<2) by flowing acetylene gas and argon gas over the silicon-based precursor;
thermally treating the silicon-based precursor on which the carbon coating layer is formed; and
preparing a silicon-based composite represented by SiO a (0<a<1) and having a surface on which a carbon coating layer is distributed by removing impurities;
wherein the silicon-based composite includes an amorphous silicon,
wherein the thermal treatment includes thermally reducing a silicon-based precursor with a metal reducing agent in an inert atmosphere, and
wherein the thermal treatment is performed in a temperature range of 350 to 650° C.
2. The method according to claim 1 , wherein the silicon-based composite further includes crystalline silicon having a crystal size of 10 nm or less.
3. The method according to claim 1 , wherein a content of the carbon coating layer is in a range of 1 to 50 wt % of a total weight of the negative electrode active material.
4. The method according to claim 1 , wherein the metal reducing agent includes one selected from the group consisting of Ti, Al, Mg, Ca, Be, Sr, Ba and a combination thereof.
5. The method according to claim 1 , wherein a molar ratio of the silicon-based precursor to the metal reducing agent is in a range of 1:0.001 to 1:1.
6. The method according to claim 1 , wherein the preparing of the silicon-based composite includes removing impurities using an acidic aqueous solution.
7. The method according to claim 1 , wherein the impurities include one or more materials selected from the group consisting of a metal oxide, a metal silicide and a metal silicate, and the metal is one selected from the group consisting of Ti, Al, Mg, Ca, Be, Sr, Ba and a combination thereof.
8. A method of preparing a negative electrode active material, comprising:
forming a carbon coating layer on a silicon-based precursor represented by SiO x (0<x<2),
wherein the carbon coating layer is formed by (1) dispersing a carbon precursor in a solvent to form a mixture, adding the mixture to the silicon-based precursor, and performing drying; and (2) performing first thermal treatment of the silicon-based precursor;
performing second thermal treatment of the silicon-based precursor on which the carbon coating layer is formed; and
preparing a silicon-based composite represented by SiO a (0<a<1) and having a surface on which a carbon coating layer is distributed by removing impurities;
wherein the silicon-based composite includes an amorphous silicon,
wherein the second thermal treatment includes thermally reducing a silicon-based precursor with a metal reducing agent in an inert atmosphere, and
wherein the second thermal treatment is performed in a temperature range of 350 to 650° C.