Multi-sensor optical device for detecting chemical species and manufacturing method thereof
An optical device for detecting a first chemical species and a second chemical species contained in a specimen, which includes: a first optical sensor, which may be optically coupled to an optical source through the specimen and is sensitive to radiation having a wavelength comprised in a first range of wavelengths; and a second optical sensor, which may be optically coupled to the optical source through the specimen and is sensitive to radiation having a wavelength comprised in a second range of wavelengths, different from the first range of wavelengths.
1. A device, comprising:
a substrate;
a semiconductor layer on the substrate, the semiconductor layer having a first portion with a first thickness and a second portion with a second thickness, the first portion having a first surface;
a first optical sensor in the first portion, the first optical sensor including:
a first anode recessed in the first portion, the first anode having an exposed surface coplanar with the first surface; and
a second optical sensor in the second portion.
2. The device of claim 1 wherein the second optical sensor includes a second anode in the semiconductor layer.
3. The device of claim 2 wherein the semiconductor layer includes the second portion having a second surface, the second anode being coplanar with the second surface.
4. The device of claim 3 wherein the first anode forms a PN junction with the semiconductor layer and the second anode forms a PN junction with the semiconductor layer.
5. The device of claim 2 wherein the second optical sensor includes an absorption layer on the second anode.
6. The device of claim 2 wherein the first optical sensor includes a first contact on the first anode and the second optical sensor includes a second contact on the second anode.
7. The device of claim 6 wherein the second optical sensor includes an absorption layer on the second anode.
8. The device of claim 7 wherein the absorption layer abuts the second contact.
9. A device, comprising:
a substrate;
a semiconductor layer on the substrate, the semiconductor layer having a first portion with a first thickness and a second portion with a second thickness;
a first optical sensor formed on a first surface of the first portion;
a second optical sensor formed on a second surface of the second portion; and
a contact layer formed on a third surface of the semiconductor layer, the third surface being opposite the first surface and the second surface.
10. The device of claim 9 wherein the first optical sensor includes a first metal layer formed on the first surface of the semiconductor layer and the second optical sensor includes a second metal layer formed on the second surface of the semiconductor layer.
11. The device of claim 10 wherein the second optical sensor includes an absorption layer on the second metal layer.
12. The device of claim 10 wherein the first optical sensor includes a first contact on the first metal layer and the second optical sensor includes a second contact on the second metal layer.
13. A device, comprising:
a substrate;
a semiconductor layer on a first surface of the substrate;
a first sensor in the semiconductor layer, the first sensor including:
a first anode; and
a first contact coupled to the first anode;
a second sensor in the semiconductor layer, the second sensor including:
a second anode;
an absorption layer on the second anode; and
a second contact coupled to the second anode;
a cathode on a second surface of the substrate, the second surface being opposite the first surface of the substrate, the cathode extending between the first sensor and the second sensor.
14. The device of claim 13 wherein the semiconductor layer includes a first portion with a first surface and a second portion with a second surface, the first anode being coplanar with the first surface and the second anode being coplanar with the second surface.
15. The device of claim 14 wherein the first anode forms a PN junction with the semiconductor layer and the second anode forms a PN junction with the semiconductor layer.
16. The device of claim 14 wherein the first portion has a first thickness and the second portion has a second thickness, the second thickness being greater than the first thickness.
17. The device of claim 13 further comprising a contact layer on the cathode.