Large Diameter Silicon Carbide Single Crystals and Apparatus and Method of Manufacture Thereof

1 . A PVT growth apparatus for PVT growing an SiC single crystal comprising:

a growth chamber;

a growth crucible positioned in the growth chamber, the growth crucible configured to be charged with a SiC source material at a bottom of the growth crucible and a single crystal SiC seed at a top or lid of the growth crucible with the SiC source material and the single crystal SiC seed in spaced relation;

thermal insulation surrounding the growth crucible inside of the growth chamber, the thermal insulation including a side insulation piece between a side of the growth crucible and a side of the growth chamber, a bottom insulation piece between the bottom of the growth crucible and a bottom of the growth chamber, a top insulation piece between the top of the growth crucible and a top of the growth chamber, and an insulation insert positioned in an opening in the top insulation piece, wherein the insulation insert has a thickness between 20 mm and 50 mm and a largest dimension between 90% and 120% of a largest dimension of the single crystal SiC seed; and

a heater positioned between the bottom of the growth crucible and the bottom insulation piece, wherein a geometry of the insulation insert is tuned to control heat flux in the SiC single crystal that grows on the single crystal SiC seed in use of the PVT growth apparatus.

2 . The PVT growth apparatus of claim 1 , wherein at least an interior facing surface of the top of the growth chamber that faces the insulation insert is black in color.

3 . The PVT growth apparatus of claim 2 , wherein the growth chamber is made from a metal or metal alloy.

4 . The PVT growth apparatus of claim 2 , wherein the growth chamber is made from stainless steel.

5 . The PVT growth apparatus of claim 2 , wherein the exterior facing surface of the top of the growth chamber that faces away from the insulation insert is black in color.

6 . The PVT growth apparatus of claim 1 , further including a growth guide depending from the top of the growth crucible toward the bottom of the growth crucible and terminating above a top level of the SiC source material.

7 . The PVT growth apparatus of claim 6 , wherein the growth guide is spaced from an interior of the side of the growth crucible.

8 . The PVT growth apparatus of claim 1 , wherein the side, top, and bottom insulation pieces each have a thickness greater than or equal to the thickness of the insulation insert.

9 . The PVT growth apparatus of claim 8 , wherein the side, top, and bottom insulation pieces each have a thickness that is at least two times the thickness of the insulation insert.

10 . The PVT growth apparatus of claim 1 , wherein the heater comprises a flat resistance heater.

11 . The PVT growth apparatus of claim 1 , wherein the heater has a largest dimension greater than a largest dimension of the bottom of the growth crucible.

12 . The PVT growth apparatus of claim 1 , wherein the heater resides exclusively between the bottom of the growth crucible and the bottom insulation piece.

13 . The PVT growth apparatus of claim 1 , wherein a ratio of an outside diameter of the growth crucible over a height of the growth crucible is between 1 and 3.

14 . The PVT growth apparatus of claim 1 , wherein a ratio of an outside diameter of the growth crucible over a height of the growth crucible is between 1.5 and 4.

15 . A PVT growth apparatus for PVT growing an SiC single crystal comprising:

a growth crucible having a side, a top, and a bottom, and an aspect ratio of an outside diameter over a height between 1 and 4, the top of the growth crucible configured to support a single crystal SiC seed in an interior of the growth crucible;

insulation surrounding an exterior of the growth crucible, said insulation including side, top, and bottom insulation pieces positioned adjacent the respective side, top, and bottom of the growth crucible, the insulation further including an insulation insert positioned in an opening in the top insulation piece, wherein the insulation insert has a thickness less than a thickness of any one of the side, top, and bottom insulation pieces; and

heater positioned exclusively between a bottom of the growth crucible and the bottom insulation piece, wherein a geometry of the insulation insert is tuned to control heat flux in the SiC single crystal that grows on the single crystal SiC seed in use of the PVT growth apparatus.

16 . The PVT growth apparatus of claim 15 , wherein the insulation insert has a thickness between 20 mm and 50 mm and a diameter between 90% and 120% of a diameter of a the single crystal SiC seed.

17 . The PVT growth apparatus of claim 15 , further including a growth chamber in which the growth crucible, insulation, and heater are positioned, the growth chamber including a top in spaced relation to the top of the growth crucible, wherein at least an interior facing surface of the top of the growth chamber is black in color.

18 . The PVT growth apparatus of claim 15 , further including at least one of the following:

a window in the bottom insulation piece; and

a window in the heater.

19 . A method of PVT growing a SiC single crystal comprising:

(a) providing the PVT growth apparatus of claim 15 with the single crystal SiC seed and a SiC source material positioned in spaced relation in the growth crucible; and

(b) causing the heater to heat the growth crucible such that the SiC source material sublimates and is transported via a temperature gradient that forms in the growth crucible in response to the heater heating the growth crucible to the single crystal SiC seed where the sublimated SiC source material condenses forming a growing SiC single crystal.

20 . The method of claim 19 , wherein step (b) includes purely axial heat fluxes passing through the bottom and the top of the growth crucible forming a flat isotherm at a growth interface of the growing SiC single crystal on the single crystal SiC seed.