SEMICONDUCTOR LASER INCORPORATING AN ELECTRON BARRIER WITH LOW ALUMINUM CONTENT
A semiconductor laser may include a substrate, an active region, and an electron stopper layer. The electron stopper layer may include an aluminum gallium indium arsenide phosphide alloy. The aluminum gallium indium arsenide phosphide alloy may have an Al x Ga y In (1-x-y) As z P (1-z) composition.
1 . A semiconductor laser comprising:
a substrate;
an active region; and
an electron stopper layer including an aluminum gallium indium arsenide phosphide alloy having an Al x Ga y In (1-x-y) As z P (1-z) composition.
2 . The semiconductor laser of claim 1 , wherein the content amount x of the Al x Ga y In (1-x-y) As z P (1-z) composition ranges from 0.20 to 0.55.
3 . The semiconductor laser of claim 1 , wherein the content amount y of the Al x Ga y In (1-x-y) As z P (1-z) composition is 0, and the Al x Ga y In (1-x-y) As z P (1-z) composition has an Al 0.3 In 0.7 As 0.5 P 0.5 composition.
4 . The semiconductor laser of claim 1 , wherein the content amount y of the Al x Ga y In (1-x-y) As z P (1-z) composition is 0, and the Al x Ga y In (1-x-y) As z P (1-z) composition has an Al 0.35 In 0.65 As 0.5 P 0.5 composition.
5 . The semiconductor laser of claims 1 , wherein the content amount y of the Al x Ga y In (1-x-y) As z P (1-z) composition is 0, and the Al x Ga y In (1-x-y) As z P (1-z) composition has an Al 0.4 In 0.6 As 0.5 P 0.5 composition.
6 . The semiconductor laser of claims 1 , wherein a lattice constant of the electron stopper layer is matched to a lattice constant of the substrate.
7 . The semiconductor laser of claims 1 , wherein a lattice constant of the electron stopper layer has a lattice mismatch relative to a lattice constant of the substrate.
8 . The semiconductor laser of claim 7 , wherein the lattice constant of the electron stopper layer has a lattice mismatch within ±1% relative to the lattice constant of the substrate.
9 . The semiconductor laser of claim 1 , wherein the substrate comprises indium phosphide (InP).
10 . The semiconductor laser of claim 1 , wherein the content amount y of the Al x Ga y In (1-x-y) As z P (1-z) composition is 0, and the Al x Ga y In (1-x-y) As z P (1-z) composition is an Al x In (1-x) As z P (1-z) composition.
11 . The semiconductor laser of claim 1 , further comprising an n-type cladding layer, a multi quantum well (MQW) active layer arranged adjacent to the n-type cladding layer, and a p-type cladding layer arranged adjacent to the electron stopper layer, wherein the electron stopper layer is arranged between the MQW active layer and the p-type cladding layer, and the p-type cladding layer includes a ridge waveguide structure.
12 . The semiconductor laser of claim 11 , further comprising a hole stopper layer arranged adjacent to the n-type cladding layer, wherein the hole stopper layer includes an aluminum gallium indium arsenide phosphide alloy having an Al x Ga y In (1-x-y) As z P (1-z) composition, where the content amount x ranges from 0.20 to 0.55.
13 . The semiconductor laser of claim 12 , wherein the content amount y of the Al x Ga y In (1-x-y) As z P (1-z) composition is 0, and the Al x Ga y In (1-x-y) As z P (1-z) composition is an Al x In (1-x) As z P (1-z) composition.
14 . The semiconductor laser of claim 11 , wherein a quantum well of the MQW active layer is compressively strained and a barrier of the MQW active layer is tensile strained, a lattice mismatch of the quantum well relative to a lattice constant of the substrate is within 2%, and a lattice mismatch of the barrier relative to the lattice constant of the substrate is within 2%.
15 . The semiconductor laser of claim 11 , wherein a quantum well of the MQW active layer is tensile strained and a barrier of the MQW active layer is compressively strained, a lattice mismatch of the quantum well relative to a lattice constant of the substrate is within 2%, and a lattice mismatch of the barrier relative to the lattice constant of the substrate is within 2%.
16 . A semiconductor laser comprising:
a substrate;
an active region;
a lateral current blocking material; and
an electron stopper layer configured to reduce oxidation and form an interface with the current blocking material, wherein the electron stopper layer includes an aluminum gallium indium arsenide phosphide alloy having an Al x Ga y In (1-x-y) As z P (1-z) composition.
17 . The semiconductor laser of claim 16 , wherein the content amount x of the Al x Ga y In (1-x-y) As z P (1-z) composition ranges from 0.20 to 0.55.
18 . The semiconductor laser of claim 16 , wherein the content amount y of the Al x Ga y In (1-x-y) As z P (1-z) composition is 0, and the Al x Ga y In (1-x-y) As z P (1-z) composition has an Al 0.3 In 0.7 As 0.5 P 0.5 composition.
19 . The semiconductor laser of claim 16 , wherein the content amount y of the Al x Ga y In (1-x-y) As z P (1-z) composition is 0, and the Al x Ga y In (1-x-y) As z P (1-z) composition has an Al 0.35 In 0.65 As 0.5 P 0.5 composition.
20 . The semiconductor laser of claims 16 , wherein the content amount y of the Al x Ga y In (1-x-y) As z P (1-z) composition is 0, and the Al x Ga y In (1-x-y) As z P (1-z) composition has an Al 0.4 In 0.6 As 0.5 P 0.5 composition.
21 . The semiconductor laser of claim 16 , wherein a quantum well of an MQW active layer is compressively strained and a barrier of the MQW active layer is tensile strained, a lattice mismatch of the quantum well relative to a lattice constant of the substrate is within 2%, and a lattice mismatch of the barrier relative to the lattice constant of the substrate is within 2%.
22 . The semiconductor laser of claim 16 , wherein a quantum well of an MQW active layer is tensile strained and a barrier of the MQW active layer is compressively strained, a lattice mismatch of the quantum well relative to a lattice constant of the substrate is within 2%, and a lattice mismatch of the barrier relative to the lattice constant of the substrate is within 2%.
23 . A method of fabricating a semiconductor laser comprising:
arranging an n-type cladding layer on a substrate;
arranging a hole stopper layer on the n-type cladding layer;
arranging a multi quantum well (MQW) active layer on the hole stopper layer;
arranging an electron stopper layer on a multi quantum well (MQW) active layer; and
arranging a current blocking material adjacent to the n-type cladding layer, hole stopper layer, MQW active layer, and electron stopper layer,
wherein the electron stopper layer is configured to reduce oxidation and form an interface with the current blocking material, and includes an aluminum gallium indium arsenide phosphide alloy having an Al x Ga y In (1-x-y) As z P (1-z) composition.
24 . The method of claim 23 , wherein the content amount x of the Al x Ga y In (1-x-y) As z P (1-z) composition ranges from 0.20 to 0.55.
25 . The method of claim 23 , wherein a quantum well of the MQW active layer is compressively strained and a barrier of the MQW active layer is tensile strained, a lattice mismatch of the quantum well relative to a lattice constant of a substrate is within 2%, and a lattice mismatch of the barrier relative to the lattice constant of the substrate is within 2%.
26 . The method of claim 23 , wherein a quantum well of the MQW active layer is tensile strained and a barrier of the MQW active layer is compressively strained, a lattice mismatch of the quantum well relative to a lattice constant of a substrate is within 2%, and a lattice mismatch of the barrier relative to the lattice constant of the substrate is within 2%.