Semiconductor memory device and writing operation method thereof
A memory system includes a semiconductor memory device having memory cells arranged in rows and columns, and a controller configured to issue a write command with or without a partial page program command to the semiconductor memory device. The semiconductor memory device, in response to the write command issued without the partial page command, executes a first program operation on a page of memory cells and then a first verify operation on the memory cells of the page using a first verify voltage for all of the memory cells of the page, and in response to the write command issued with the partial page command, executes a second program operation on a subset of the memory cells of the page and then a second verify operation on the memory cells of the subset using one of several different second verify voltages corresponding to the subset.
1. A semiconductor memory device comprising:
a semiconductor memory array including a plurality of memory cells arranged at intersection of word lines and bit lines; and
a control unit configured to execute a write operation that includes a program operation and a verify operation, wherein
during a write operation on a page of memory cells including a first subset of memory cells of the page and a second subset of memory cells of the page, a first verify voltage is applied to a word line that is connected to gates of the memory cells of the page when the verify operation is performed on the memory cells of the first subset and a second verify voltage different from the first verify voltage is applied to the word line when the verify operation performed on the memory cells of the second subset.
2. The semiconductor memory device according to claim 1 , wherein
during the write operation, after the program operation has been performed on the memory cells of the first subset and the memory cells of the first subset has passed verification, the program operation is performed on the memory cells of the second subset.
3. The semiconductor memory device according to claim 2 , wherein
the second verify voltage is greater than the first verify voltage.
4. The semiconductor memory device according to claim 2 , wherein
the program operation is performed on the memory cells of the first subset and on the memory cells of the second subset in multiple loops, and a program voltage of an increased level is applied to the word line for each subsequent loop, and
an amount of increase in the program voltage for each subsequent loop when the program operation is performed on the memory cells of the first subset is less than an amount of increase in the program voltage for each subsequent loop when the program operation is performed on the memory cells of the second subset.
5. The semiconductor memory device according to claim 2 , wherein
when the program operation is performed on the memory cells of the first subset, programming of all of the memory cells of the second subset is inhibited, and
when the program operation is performed on the memory cells of the second subset, programming of less than all of the memory cells of the first subset is inhibited while programming of one or more of the memory cells of the first subset is enabled.
6. The semiconductor memory device according to claim 5 , wherein
the one or more of the memory cells of the first subset for which programming is enabled, are identified by carrying out a pre-verify operation before the program operation is performed on the memory cells of the second subset.
7. The semiconductor memory device according to claim 6 , wherein
during the pre-verify operation, a first read voltage is applied to the word line followed by a second read voltage that is greater than the first read voltage.
8. The semiconductor memory device according to claim 1 , wherein
the page of memory cells further includes a third subset of memory cells of the page and a fourth subset of memory cells of the page, and
a pre-verify operation is carried out: (i) after the program operation is performed on the memory cells of the first subset and before the program operation is performed on the memory cells of the second subset; (ii) after the program operation is performed on the memory cells of the second subset and before the program operation is performed on the memory cells of the third subset; and (iii) after the program operation is performed on the memory cells of the third subset and before the program operation is performed on the memory cells of the fourth subset.
9. The semiconductor memory device according to claim 8 , wherein
during each pre-verify operation, a first read voltage is applied to the word line followed by a second read voltage that is greater than the first read voltage.
10. The semiconductor memory device according to claim 9 , wherein the second read voltage is at: (i) a first voltage level when the pre-verify operation is carried out after the program operation is performed on the memory cells of the first subset and before the program operation is performed on the memory cells of the second subset; (ii) a second voltage level higher than the first voltage level when the pre-verify operation is carried out after the program operation is performed on the memory cells of the second subset and before the program operation is performed on the memory cells of the third subset; and (iii) a third voltage level higher than the second voltage level when the pre-verify operation is carried out after the program operation is performed on the memory cells of the third subset and before the program operation is performed on the memory cells of the fourth subset.
11. A method of executing a write operation on a page of memory cells of a semiconductor memory device having a plurality of memory cells arranged at intersection of word lines and bit lines, wherein the write operation includes a program operation and a verify operation, and the page of memory cells includes a first subset of memory cells of the page and a second subset of memory cells of the page, said method comprising:
applying a first verify voltage to a word line that is connected to gates of the memory cells of the page when the verify operation is performed on the memory cells of the first subset after the program operation is performed on the memory cells of the first subset; and
applying a second verify voltage different from the first verify voltage to the word line when the verify operation performed on the memory cells of the second subset after the program operation is performed on the memory cells of the second subset.
12. The method according to claim 11 , wherein
after the program operation has been performed on the memory cells of the first subset and the memory cells of the first subset has passed verification, the program operation is performed on the memory cells of the second subset.
13. The method according to claim 12 , wherein the second verify voltage is greater than the first verify voltage.
14. The method according to claim 12 , wherein
the program operation is performed on the memory cells of the first subset and on the memory cells of the second subset in multiple loops, and a program voltage of an increased level is applied to the word line for each subsequent loop, and
an amount of increase in the program voltage for each subsequent loop when the program operation is performed on the memory cells of the first subset is less than an amount of increase in the program voltage for each subsequent loop when the program operation is performed on the memory cells of the second subset.
15. The method according to claim 12 , wherein
when the program operation is performed on the memory cells of the first subset, programming of all of the memory cells of the second subset is inhibited, and
when the program operation is performed on the memory cells of the second subset, programming of less than all of the memory cells of the first subset is inhibited while programming of one or more of the memory cells of the first subset is enabled.
16. The method according to claim 15 , wherein the one or more of the memory cells of the first subset for which programming is enabled, are identified by carrying out a pre-verify operation before the program operation is performed on the memory cells of the second subset.
17. The method according to claim 16 , wherein
during the pre-verify operation, a first read voltage is applied to the word line followed by a second read voltage that is greater than the first read voltage.
18. The method according to claim 11 , wherein
the page of memory cells further includes a third subset of memory cells of the page and a fourth subset of memory cells of the page, and
a pre-verify operation is carried out: (i) after the program operation is performed on the memory cells of the first subset and before the program operation is performed on the memory cells of the second subset; (ii) after the program operation is performed on the memory cells of the second subset and before the program operation is performed on the memory cells of the third subset; and (iii) after the program operation is performed on the memory cells of the third subset and before the program operation is performed on the memory cells of the fourth subset.
19. The method according to claim 18 , wherein
during each pre-verify operation, a first read voltage is applied to the word line followed by a second read voltage that is greater than the first read voltage.
20. The method according to claim 19 , wherein the second read voltage is at: (i) a first voltage level when the pre-verify operation is carried out after the program operation is performed on the memory cells of the first subset and before the program operation is performed on the memory cells of the second subset; (ii) a second voltage level higher than the first voltage level when the pre-verify operation is carried out after the program operation is performed on the memory cells of the second subset and before the program operation is performed on the memory cells of the third subset; and (iii) a third voltage level higher than the second voltage level when the pre-verify operation is carried out after the program operation is performed on the memory cells of the third subset and before the program operation is performed on the memory cells of the fourth subset.