Semiconductor device
A semiconductor device includes a substrate, a semiconductor element, a terminal and a solder outflow prevention part. The semiconductor element is fixed on one side of the substrate via a first solder layer. The terminal that is fixed on the one side of the substrate via a second solder layer. The solder outflow prevention part is formed between the semiconductor element and the terminal in the one side of the substrate and is configured to prevent the first solder layer and the second solder layer from outflowing. A distance between the solder outflow prevention part and the semiconductor element is longer than a thickness of the first solder layer.
1. A semiconductor device comprising:
a substrate;
a semiconductor element that is fixed on one side of the substrate via a first solder layer;
a terminal that is fixed on the one side of the substrate via a second solder layer; and
a solder outflow prevention part that is provided between the semiconductor element and the terminal in the one side of the substrate and that is configured to prevent the first solder layer and the second solder layer from outflowing, wherein
a distance between the solder outflow prevention part and the semiconductor element is longer than a thickness of the first solder layer,
the solder outflow prevention part is a groove formed on the one side of the substrate and a first end of the terminal is fixed above the groove,
the first end of the terminal is fixed above an island portion exposed on the substrate and surrounded by the groove.
2. The semiconductor device according to claim 1 , wherein the solder outflow prevention part is a groove formed on the one side of the substrate and a first end of the terminal is fixed above the groove.
3. The semiconductor device according to claim 2 , wherein a connection part of the first end of the terminal is fixed to a position that overlaps with the groove in a plan view.
4. The semiconductor device according to claim 1 , wherein
the solder outflow prevention part is an insulating material disposed on the one side of the substrate,
a height of the insulating material is larger than a sum total of a height of the second solder layer and a thickness of the terminal, and
a tip of a first end of the terminal directly contacts with a side surface of the insulating material.
5. The semiconductor device according to claim 1 , wherein
the semiconductor element and the first end of the terminal are sealed with a sealing resin, and
a second end of the terminal is exposed outside of the sealing resin.
6. The semiconductor device according to claim 1 , wherein
the substrate has a wiring layer, and
the first solder layer and the second solder layer are electrically connected to the wiring layer and are formed on the wiring layer.
7. The semiconductor device according to claim 1 , wherein
the substrate has an insulating layer and a wiring layer formed on the insulating layer, the groove is formed in the wiring layer, and
a bottom portion of the groove is constituted by a part of the wiring layer.