Light emitting device with reflective sidewall
View Patent ↗Embodiments of the invention include a semiconductor light emitting device including a semiconductor structure. The semiconductor structure includes a light emitting layer disposed between an n-type region and a p-type region. A wavelength converting structure is disposed in a path of light emitted by the light emitting layer. A diffuse reflector is disposed along a sidewall of the semiconductor light emitting device and the wavelength converting structure. The diffuse reflector includes a pigment. A reflective layer is disposed between the diffuse reflector and the semiconductor structure. The reflective layer is a different material from the diffuse reflector.
1. A device comprising:
a semiconductor light emitting device comprising a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region;
a wavelength converting structure disposed over the light emitting layer;
a light blocking structure disposed along a sidewall of the semiconductor light emitting device and the wavelength converting structure, the light blocking structure comprising a pigment; and
a reflective layer disposed between the light blocking structure and the semiconductor structure, the reflective layer including alternating first and second insulating layers, the first insulating layers having a different index of refraction from the second insulating layers.
2. The device of claim 1 wherein the light blocking structure comprises particles disposed in a transparent material.
3. The device of claim 1 wherein a first surface of the light blocking structure is at the same elevation as a first surface of the wavelength converting structure.
4. The device of claim 1 wherein the reflective layer comprises an oxide and the light blocking structure comprises silicone.
5. A device comprising:
a semiconductor light emitting device comprising a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region;
a wavelength converting structure disposed over the light emitting layer;
a light blocking structure disposed along a sidewall of the semiconductor light emitting device and the wavelength converting structure, the light blocking structure comprising a pigment, and the light blocking structure being the same color as an off-state color of the wavelength converting structure; and
a reflective layer disposed between the light blocking structure and the semiconductor structure, the reflective layer including a different material from the light blocking structure.
6. The device of claim 1 wherein the light blocking structure is non-white.
7. A device comprising:
a semiconductor light emitting diode comprising a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region;
a wavelength converting structure disposed over the light emitting layer;
a diffuse reflector disposed along a sidewall of the semiconductor light emitting device and the wavelength converting structure, the diffuse reflector comprising particles disposed in a transparent material; and
a reflective layer disposed between the diffuse reflector and the semiconductor structure, wherein the reflective layer comprises an oxide layer.
8. The device of claim 7 wherein the particles are TiO 2 and the transparent material is silicone.
9. The device of claim 7 wherein the reflective layer comprises alternating first and second insulating layers, wherein the first insulating layers have a different index of refraction from the second insulating layers.
10. A device comprising:
a semiconductor light emitting diode comprising a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region;
a wavelength converting structure disposed over the light emitting layer;
a diffuse reflector disposed along a sidewall of the semiconductor light emitting device and the wavelength converting structure, the diffuse reflector comprising particles disposed in a transparent material, the diffuse reflector having the same color as an off-state color of the wavelength converting structure; and
a reflective layer disposed between the diffuse reflector and the semiconductor structure, wherein the reflective layer comprises an oxide layer.
11. The device of claim 7 wherein the diffuse reflector is non-white.
12. A device comprising:
a first semiconductor light emitting diode comprising a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region;
a first wavelength converting structure disposed over the first light emitting diode;
a second semiconductor light emitting diode comprising a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region;
a second wavelength converting structure disposed over the second light emitting diode;
a third wavelength converting structure, wherein the second wavelength converting structure is disposed between the third wavelength converting structure and the second semiconductor light emitting diode;
a thin reflective layer disposed between the second and third wavelength converting structures; and
a light blocking layer disposed between the first and second wavelength converting structures; wherein:
an off-state appearance of the first and third wavelength converting structures and the light blocking layer is the same color; and
an off-state appearance of the second wavelength converting structure is a different color from the off-state appearance of the first and third wavelength converting structures.
13. The device of claim 12 wherein the thin reflective layer is a first thin reflective layer, the device further comprising:
a second thin reflective layer disposed between the first semiconductor light emitting diode and the light blocking structure; and
a third thin reflective layer disposed between the second semiconductor light emitting diode and the light blocking structure.