IP Library Granted Patent US 10,186,550
Granted Patent B2
US 10,186,550 · App. 15/591,187 · Granted Jan 22, 2019

Sensor device module

Inventors: Hirobumi Matsui (Tokyo, JP); Yuji Kawano (Tokyo, JP); Shinichi Hosomi (Tokyo, JP)
Assignee: Mitsubishi Electric Corporation
H01L27/22G01R33/093
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Quick Facts
Patent No.
US 10,186,550
App. No.
15/591,187
Granted
Jan 22, 2019
Kind
B2
Abstract

A sensor device module comprises: a substrate having a sensor element covered with a protective film, an integrated circuit formed on the substrate, and a bonding pad part formed on the substrate; wherein the integrated circuit and the sensor element are connected at a contact part, and the sensor element and the contact part have a metal thin film layer which consists of first metal layers and second metal layers, an insulating film which is formed on the metal thin film layer and made from the same material as the protective film, and an exfoliation sacrifice layer which is formed on the insulating film and in contact with the protective film, further wherein an upper most film or a lower most film of the exfoliation sacrifice layer is made from the same material as an upper most film of the metal thin film layer.

Claims (42)

1. A sensor device module, comprising

a substrate on which a sensor element that is covered with a protective film and has a pattern is formed,

an integrated circuit which is formed on the substrate, and processes an output of the sensor element to calculate a sensor signal, and

a bonding pad part which is formed on the substrate and into which electric power supplied to the integrated circuit is inputted;

wherein the integrated circuit and the sensor element are connected at a contact part, and

the sensor element and the contact part have

a layered metal thin film which consists of first metal layers and second metal layers, each layer stacked one above the other,

an insulating film which is formed on the layered metal thin film and made from the same material as the protective film, and

an exfoliation sacrifice film which is formed on the insulating film and in contact with the protective film,

further wherein an upper most layer or a lower most layer of the exfoliation sacrifice film is made from the same material as an upper most layer of the layered metal thin film.

2. The sensor device module as set forth in claim 1 ,

wherein the integrated circuit is formed in an area different from that of the sensor element.

3. The sensor device module as set forth in claim 1 ,

wherein the integrated circuit is formed under the sensor element.

4. The sensor device module as set forth in claim 1 ,

wherein the contact part and the sensor element are formed on the same insulating film.

5. The sensor device module as set forth in claim 1 ,

wherein the contact part is formed in a contact hole.

6. The sensor device module as set forth in claim 1 ,

wherein the integrated circuit and the sensor element are connected by an aluminum wiring which is formed on the insulating film.

7. The sensor device module as set forth in claim 1 ,

wherein the first metal layer and the second metal layer consist of a Cu layer and a Fe(x) Co(1−x) (0≤x≤0.3) layer.

8. A sensor device module, comprising

a substrate on which a sensor element that is covered with a protective film and has a pattern is formed,

an integrated circuit which is formed on the substrate and processes an output of the sensor element to calculate a sensor signal, and

a bonding pad part which is formed on the substrate and into which electric power supplied to the integrated circuit is inputted;

wherein the integrated circuit and the sensor element are connected at a contact part, and

the sensor element and the contact part have

a layered metal thin film which consists of a single metal layer,

an insulating film which is formed on the layered metal thin film, and

an exfoliation sacrifice film which is formed on the insulating film and in contact with the protective film,

further wherein an upper most layer or a lower most layer of the exfoliation sacrifice film is made from the same material as the layered metal thin film.

9. The sensor device module as set forth in claim 8 ,

wherein the integrated circuit is formed in an area different from that of the sensor element.

10. The sensor device module as set forth in claim 8 ,

wherein the integrated circuit is formed under the sensor element.

11. The sensor device module as set forth in claim 8 ,

wherein the contact part and the sensor element are formed on the same insulating film.

12. The sensor device module as set forth in claim 8 ,

wherein the contact part is formed in a contact hole.

13. The sensor device module as set forth in claim 8 ,

wherein the integrated circuit and the sensor element are connected by an aluminum wiring which is formed on the insulating film.

Assignments (2)
COMPANY SPLIT Recorded Sep 4, 2024
From: MITSUBISHI ELECTRIC CORPORATION
To: MITSUBISHI ELECTRIC MOBILITY CORPORATION
Reel/Frame 068834/0585 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 10, 2017
From: MATSUI, HIROBUMI; KAWANO, YUJI; HOSOMI, SHINICHI
To: MITSUBISHI ELECTRIC CORPORATION
Reel/Frame 042322/0112 →
Priority Claims (1)
JP 2016-226434 · Nov 22, 2016 · national
Continuity (1)
Related Publication 20180145111A1 · May 24, 2018