Optoelectronic component and method for producing an optoelectronic component
In various embodiments, an optoelectronic component is provided. The optoelectronic component includes a metal substrate having a surface, an electrically conductive planarization layer on the surface of the metal substrate, wherein the planarization layer comprises a surface, an organically functional layer structure on or above the surface of the planarization layer, and an electrode layer formed in a transparent fashion on or above the organically functional layer structure. The roughness of the surface of the planarization layer is lower than the roughness of the surface of the metal substrate. The surface of at least one of the metal substrate or the planarization layer is formed in a light-scattering fashion.
1. An optoelectronic component, comprising:
a metal substrate having a surface;
an electrically conductive planarization layer on the surface of the metal substrate, wherein the planarization layer comprises a surface;
an organically functional layer structure on or above the surface of the planarization layer; and
an electrode layer formed in a transparent fashion on or above the organically functional layer structure;
wherein the roughness of the surface of the planarization layer is lower than the roughness of the surface of the metal substrate; and
wherein the surface of at least one of the metal substrate or the planarization layer is formed in a light-scattering fashion, and
wherein the planarization layer comprises scattering centers embedded in a matrix.
2. The optoelectronic component of claim 1 ,
wherein the metal substrate comprises a second electrode layer and a metal carrier;
wherein the second electrode layer is arranged on the metal carrier; and
wherein the surface of the second electrode layer forms the surface of the metal substrate.
3. The optoelectronic component of claim 2 ,
wherein the metal carrier is a steel plate or a steel foil.
4. The optoelectronic component of claim 2 ,
wherein the planarization layer has a thickness that is greater than 2 times the roughness of the surface of the metal substrate.
5. The optoelectronic component of claim 1 ,
wherein the scattering centers are formed in an electrically conductive fashion.
6. The optoelectronic component of claim 1 ,
wherein the optoelectronic component is a light-emitting component.
7. A method for producing an optoelectronic component, the method comprising:
forming an electrically conductive planarization layer on the surface of a metal substrate;
wherein the planarization layer comprises a surface, and
wherein the roughness of the surface of the planarization layer is lower than the roughness of the surface of the metal substrate, and
wherein the surface of at least one of the metal substrate or the planarization layer is formed in a light-scattering fashion;
forming an organically functional layer structure on or above the surface of the planarization layer; and
forming a transparent electrode layer on or above the organically functional layer structure, and
wherein the planarization layer comprises scattering centers embedded in a matrix.
8. The method of claim 7 ,
wherein the planarization layer is formed by means of a paste, wherein the paste comprises the material of the matrix and the scattering centers.
9. The method of claim 8 ,
wherein the planarization layer is formed by arranging a material in a particulate fashion on or above the metal substrate, wherein the particles comprise the material of the matrix.
10. The method of claim 9 ,
wherein the particles furthermore comprise the scattering centers.
11. The method of claim 10 ,
wherein the planarization layer is furthermore formed with cavities arranged between the particles of the material of the matrix and the scattering centers.
12. The method of claim 7 ,
wherein the metal substrate comprises a second electrode layer and a metal carrier, wherein the second electrode layer is arranged on the metal carrier, and
the surface of the second electrode layer forms the surface of the metal substrate.
13. The method of claim 7 ,
wherein the optoelectronic component is formed as a light-emitting component.