IP Library Granted Patent US 10,340,256
Granted Patent B2
US 10,340,256 · App. 15/593,626 · Granted Jul 2, 2019

Display devices

Inventors: Yuan-Lin Wu (Miao-Li County, TW); Kuan-Feng Lee (Miao-Li County, TW); Wei-Cheng Chu (Miao-Li County, TW)
Assignee: INNOLUX CORPORATION
H01L25/0753H01L33/20H01L33/58H01L33/62H01L2933/0033H01L2933/0066
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Quick Facts
Patent No.
US 10,340,256
App. No.
15/593,626
Granted
Jul 2, 2019
Kind
B2
Abstract

A display device is provided. The display device includes a substrate having a surface including a display area and a non-display area adjacent to the display area; a plurality of light-emitting diodes disposed on the display area of the substrate, wherein the light-emitting diode includes a contact electrode; and an anisotropic conductive layer disposed between the substrate and the plurality of light-emitting diodes, wherein the anisotropic conductive layer has a cross-sectional sidewall profile, and at least a part of the cross-sectional sidewall profile of the anisotropic conductive layer is in a shape of curve.

Claims (20)

1. A display device, comprising:

a substrate having a surface comprising a display area and a non-display area adjacent to the display area;

a plurality of light-emitting diodes disposed on the display area of the substrate, wherein the light-emitting diode comprises a contact electrode;

an anisotropic conductive layer disposed between the substrate and the plurality of light-emitting diodes, wherein the anisotropic conductive layer has a cross-sectional sidewall profile, and at least a part of the cross-sectional sidewall profile of the anisotropic conductive layer is in a shape of a curve;

a covering layer contacting at least a portion of one of the plurality of light-emitting diodes, wherein the covering layer has a cross-sectional sidewall profile, and at least a part of the cross-sectional sidewall profile of the covering layer is in a shape of a curve; and

a connection structure disposed on the non-display area and/or the display area of the substrate, wherein the connection structure comprises an electrode having a cross-sectional sidewall profile, and at least a part of the cross-sectional sidewall profile of the electrode is in a shape of a curve.

2. The display device as claimed in claim 1 , further comprising an array layer disposed between the anisotropic conductive layer and the substrate.

3. The display device as claimed in claim 1 , wherein an angle between the surface of the substrate and the cross-sectional sidewall profile of the anisotropic conductive layer is less than 90 degrees.

4. The display device as claimed in claim 3 , wherein the angle is greater than or equal to 30 degrees.

5. The display device as claimed in claim 1 , wherein the anisotropic conductive layer comprises a plurality of separated patterns.

6. The display device as claimed in claim 5 , wherein the anisotropic conductive layer is black.

7. The display device as claimed in claim 5 , further comprising a plurality of black matrices having a height disposed on the substrate and between the separated patterns of the anisotropic conductive layer.

8. The display device as claimed in claim 1 , wherein the anisotropic conductive layer comprises a plurality of conductive particles having a surface located between the contact electrodes of the light-emitting diodes and a plurality of bonding pads disposed on the substrate.

9. The display device as claimed in claim 8 , wherein the conductive particle has a plurality of protrusions from the surface thereof.

10. The display device as claimed in claim 1 , wherein the connection structure comprises an insulating layer which is separated from the light-emitting diodes.

11. The display device as claimed in claim 1 , wherein the connection structure comprises an insulating layer which is extended to cover the light-emitting diodes.

12. The display device as claimed in claim 10 , wherein the contact electrode covers the insulating layer.

13. The display device as claimed in claim 1 , wherein the one of the plurality of light-emitting diodes comprises a first N-type semiconductor layer having a thickness and a first P-type semiconductor layer having a thickness formed on the first N-type semiconductor layer, and the connection structure comprises a second N-type semiconductor layer having a thickness and the electrode having a thickness formed on the second N-type semiconductor layer.

14. The display device as claimed in claim 13 , wherein the thickness of the first N-type semiconductor layer of the light-emitting diode is greater than the thickness of the second N-type semiconductor layer of the connection structure.

15. The display device as claimed in claim 13 , wherein a ratio between a sum of the thickness of the second N-type semiconductor layer and the thickness of the electrode of the connection structure and a sum of the thickness of the first N-type semiconductor layer and the thickness of the first P-type semiconductor layer of the light-emitting diode is from 0.9 to 1.1.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 12, 2017
From: WU, YUAN-LIN; LEE, KUAN-FENG; CHU, WEI-CHENG
To: INNOLUX CORPORATION
Reel/Frame 042353/0215 →
Continuity (4)
Provisional Application 62465869 · Mar 2, 2017
Provisional Application 62429162 · Dec 2, 2016
Provisional Application 62394225 · Sep 14, 2016
Related Publication 20180076182A1 · Mar 15, 2018