Gas detecting device
A gas detecting device configured to be attached to a surface includes a substrate, a semiconductor layer, a light-emitting component, a first electrode and a second electrode. The substrate includes a plurality of stacking layers stacked onto one another, and a material of the substrate includes cellulose nanofibrils (CNF). The substrate is formed by 3-D printing, such that a contact surface of the substrate is tightly attached to the surface. The semiconductor layer is formed on the substrate by 3-D printing. The light-emitting component is disposed on the substrate. The first electrode is coupled to the semiconductor layer and the light-emitting component. The second electrode is coupled to the semiconductor layer and a ground electrode. The first electrode and the second electrode are both disposed on the semiconductor layer and maintain a gap therebetween. A resistance of the semiconductor layer is changed according to a concentration of a designated gas.
1. A gas detecting device configured to be attached to a surface, the gas detecting device comprising:
a substrate comprises a plurality of stacking layers stacked onto one another, a material of the substrate comprising cellulose nanofibrils, wherein the substrate is formed by a three-dimensional (3-D) printing technique, such that a contact surface of the substrate is tightly attached to the surface;
a semiconductor layer formed on the substrate by the 3-D printing technique;
a light-emitting component disposed on the substrate;
a first electrode coupled to the semiconductor layer and the light-emitting component; and
a second electrode coupled to the semiconductor layer and a ground electrode, both of the first electrode and the second electrode disposed on the semiconductor layer and a gap maintained between the first electrode and the second electrode, wherein a resistance of the semiconductor layer is changed according to a concentration of a designated gas.
2. The gas detecting device according to claim 1 , wherein a greatest thickness of the substrate ranges from 10 μm to 100 μm.
3. The gas detecting device according to claim 1 , wherein the contact surface is a flat surface, so as to conform to a flat-surface profile of the surface.
4. The gas detecting device according to claim 1 , wherein the contact surface is a curved surface so as to conform to a curved-surface profile of the surface.
5. The gas detecting device according to claim 1 , further comprising an adhesive layer disposed on the contact surface so as to attach the substrate to the surface.
6. The gas detecting device according to claim 1 , wherein the semiconductor layer is a metal oxide layer.
7. The gas detecting device according to claim 1 , wherein a material of the semiconductor layer comprises an oxide of graphene, tin, zinc, indium, tungsten, magnesium, iron or titanium.
8. The gas detecting device according to claim 1 , wherein the resistance of the semiconductor layer is inversely proportional to the concentration of the designated gas.
9. The gas detecting device according to claim 1 , wherein the light-emitting component comprises a light-emitting diode.
10. The gas detecting device according to claim 1 , wherein the first electrode, the second electrode and the light-emitting component are formed by the 3-D printing technique.