Light-emitting device
View Patent ↗A semiconductor device comprises a substrate comprising a surface area having a plurality of patterns therein, wherein the plurality of patterns comprises a plurality of first patterns and a plurality of second patterns; and a light-emitting stack formed on the substrate; wherein each of the first patterns comprises a first feature length and each of the second patterns comprises a second feature length smaller than the first feature length, and wherein, in a square area of 30 microns by 30 microns chosen from the surface area, an amount of the plurality of the first patterns is more than that of the plurality of the second patterns.
1. A semiconductor device, comprising:
a substrate comprising a surface area having a plurality of repeated units, one of which comprising a plurality of first patterns and a plurality of second patterns; and
a light-emitting stack formed on the substrate,
wherein each of the first patterns comprises a first feature length and each of the second patterns comprises a second feature length smaller than the first feature length, wherein, in a square area of 30 microns by 30 microns chosen from the surface area, an amount of the plurality of the first patterns is more than that of the plurality of the second patterns, and
wherein the one of the plurality of the repeated unit satisfies the following equation:
50%≤[( a 1+ a 2)/ A ]×100%≤90%
wherein, from a top view of the substrate, A is a total area of the one of the plurality of the repeated units, a 1 is a total area of the first patterns in the one of the plurality of the repeated units, and a 2 is a total area of the second patterns in the one of the plurality of the repeated units.
2. The semiconductor device of claim 1 , wherein the first feature length is 1.1˜5 times of the second feature length.
3. The semiconductor device of claim 1 , wherein the one of the plurality of the repeated units is composed of a first equivalent amount of the first pattern and a second equivalent amount of the second pattern, and a ratio of the first equivalent amount of the first patterns to a second equivalent amount of the second patterns is between 6 and 15.
4. The semiconductor device of claim 3 , wherein the ratio of the first equivalent amount of the first patterns to the second equivalent amount of the second pattern is between 8 and 13.
5. The semiconductor device of claim 1 , wherein a top-view shape of one of the first patterns and/or the second patterns comprises a regular polygon or a circle.
6. The semiconductor device of claim 1 , wherein the light-emitting stack further comprises a buffer layer directly grown on the substrate.
7. The semiconductor device of claim 1 , wherein a top-view shape of the one of the plurality of the repeated units comprises a regular polygon.
8. The semiconductor device of claim 7 , wherein the one of the plurality of the repeated units comprises no other second patterns except those located around vertices of the regular polygon.
9. The semiconductor device of claim 1 , wherein the one of the plurality of the repeated units satisfies the following equation:
60%≤[( a 1+ a 2)/ A ]×100%≤85%.
10. The semiconductor device of claim 1 , wherein the surface area which is devoid of any first pattern and any second pattern comprises sapphire c-plane.
11. The semiconductor device of claim 1 , wherein each of the first patterns further comprises a first height and each of the second patterns further comprises a second height smaller than the first height.