Compound micro-transfer-printed power transistor device
Embodiments of the present invention provide a compound power transistor device including a first semiconductor substrate including a first semiconductor material, a second semiconductor substrate including a second semiconductor material different from the first semiconductor material, and a power transistor formed in or on the second semiconductor substrate. In certain embodiments, the second semiconductor substrate is micro-transfer printed on and secured to the first semiconductor substrate.
1. A compound power transistor device, comprising:
a first semiconductor substrate comprising a first semiconductor material;
an electronic circuit formed in or on the first semiconductor substrate;
a second semiconductor substrate comprising a second semiconductor material different from the first semiconductor material, wherein the second semiconductor substrate has an extent over the first semiconductor substrate that is smaller than the first semiconductor substrate; and
a power transistor formed in or on the second semiconductor substrate;
wherein the second semiconductor substrate has been micro-transfer printed on and secured to the first semiconductor substrate and the power transistor is electrically connected to the electronic circuit.
2. The compound power transistor device of claim 1 , wherein the second semiconductor substrate comprises a fractured tether.
3. The compound power transistor device of claim 1 , comprising a layer of adhesive between the second semiconductor substrate and the first semiconductor substrate that adheres the power transistor to the first semiconductor substrate.
4. The compound power transistor device of claim 1 , wherein the power transistor is formed in or on a side of the second semiconductor substrate opposite the first semiconductor substrate.
5. The compound power transistor device of claim 1 , comprising a plurality of power transistors formed in or on the second semiconductor substrate, or comprising a plurality of second semiconductor substrates, and one or more power transistors formed in or on each second semiconductor substrate, wherein the power transistors are electrically connected in parallel.
6. The compound power transistor device of claim 1 , wherein the electronic circuit is at least one of an integrated circuit, an active electronic circuit, and a CMOS electronic circuit.
7. The compound power transistor device of claim 1 , wherein the electronic circuit is electrically connected to the power transistor and wherein the electronic circuit is a control circuit or comprises a gate pre-drive circuit.
8. The compound power transistor device of claim 1 , wherein the compound power transistor device comprises a layer or structure formed on the second semiconductor substrate that comprises a fractured tether.
9. The compound power transistor device of claim 1 , comprising an encapsulation layer formed at least partially on or over the second semiconductor substrate and on a side of the second semiconductor substrate that is substantially non-parallel to the surface of the first semiconductor substrate.
10. The compound power transistor device of claim 1 , wherein the first semiconductor substrate comprises one or more layers formed on, in, or over the first semiconductor material and between the first semiconductor material and the second semiconductor substrate.
11. The compound power transistor device of claim 1 , wherein the first semiconductor substrate comprises silicon and the second semiconductor substrate comprises a compound semiconductor, a II-VI semiconductor, a III-V semiconductor, or a GaAs semiconductor.
12. The compound power transistor device of claim 1 , comprising a plurality of second semiconductor substrates, each of the plurality of second semiconductor substrates comprising a second semiconductor material different from the first semiconductor material and a power transistor formed in or on the second semiconductor substrate; and wherein each second semiconductor substrate has been micro-transfer printed on and secured to the first semiconductor substrate.
13. The compound power transistor device of claim 1 , comprising an electrical connection pad on the first semiconductor substrate and one or more electrically conductive connection posts protruding from a side of the second semiconductor substrate electrically connected to the power transistor wherein the one or more connection posts are electrically connected to the connection pad.
14. The compound power transistor device of claim 1 , comprising one or more electrically conductive connection posts protruding from a side of the first semiconductor substrate electrically connected to the electronic circuit.
15. A compound power transistor system, comprising:
a destination substrate; and
a compound power transistor device according to claim 1 micro-transfer printed onto the destination substrate or layers formed on or over the destination substrate.
16. The compound power transistor device of claim 1 , wherein the electronic circuit is disposed directly beneath the second semiconductor substrate.
17. The compound power transistor device of claim 9 , wherein the encapsulation layer extends at least partially on or over the first semiconductor substrate.
18. The compound power transistor device of claim 9 , wherein the encapsulation layer comprises at least a portion of a tether.
19. The compound power transistor device of claim 9 , wherein the encapsulation layer is chemically etch-resistant.
20. A power transistor source wafer, comprising:
a wafer of substrate material;
a patterned sacrificial layer formed on or in the substrate material, the patterned sacrificial layer defining separate anchors disposed laterally between sacrificial portions of the sacrificial layer; and
at least one power transistor or power transistor device formed over each sacrificial portion and attached to one or more of the anchors by one or more tethers over the sacrificial portion.