Enhanced superconductivity of fullerenes
Superconductive fullerenes, methods for enhancing characteristics of superconductive fullerenes and devices incorporating the fullerenes are disclosed. Enhancements can include increase in the critical transition temperature at a constant magnetic field; the existence of a superconducting hysteresis over a changing magnetic field; a decrease in the stabilizing magnetic field required for the onset of superconductivity; and/or an increase in the stability of superconductivity over a large magnetic field. The enhancements can be brought about by transmitting electromagnetic radiation to the superconductive fullerene such that the electromagnetic radiation impinges on the fullerene with an energy that is greater than the band gap of the fullerene.
1. A device comprising a superconductive fullerene and an electromagnetic energy source, the electromagnetic energy source being in photonic communication with the superconductive fullerene such that the electromagnetic energy emitted from the source is capable of impinging upon the superconductive fullerene with an energy that is greater than the band gap of the superconductive fullerene, the device comprising a magnetic coil, a coupling device, a digital circuit, a low-loss power cable, an RF filter, a microwave filter, a current limiter, a railgun magnet, or a coilgun magnet.
2. The device of claim 1 , wherein the electromagnetic energy source is configured to emit ultraviolet light, visible light, or infrared light.
3. The device of claim 1 , wherein the electromagnetic energy source comprises a light emitting diode.
4. The device of claim 1 , the superconductive fullerene being a component of a superconductive composite.
5. The device of claim 4 , wherein the superconductive composite comprises a layer comprising a plurality of the fullerene deposited on a substrate.
6. The device of claim 4 , wherein the superconductive composite comprises a plurality of the fullerene encapsulated in a polymeric matrix.
7. The device of claim 1 , wherein the superconductive fullerene is an intercalated fullerene.
8. The device of claim 1 , wherein the superconductive fullerene is a halogenated fullerene.
9. The device of claim 1 , wherein the superconductive fullerene is a hydrogenated fullerene comprising a general structure of:
C n H x
in which n is 20 or greater, and
x=about 10 or more.
10. The device of claim 9 , wherein x=n−2.
11. The device of claim 1 , wherein the superconductive fullerene is derivatized.
12. The device of claim 1 , wherein the superconductive fullerene has a first critical transition temperature when electromagnetic energy is emitted from the source that is about 10 K or more than a second critical transition temperature when electromagnetic energy is not emitted from the source.
13. The device of claim 7 , the intercalated fullerene having the general structure of:
Cs a Rb b K c M y C n
in which M=a secondary metal
a, b, c=0-3, wherein at least one of a, b, c is at least 1
y=0-2, and
n is 20 or greater.
14. A device comprising a superconductive fullerene and an electromagnetic energy source, the electromagnetic energy source being in photonic communication with the superconductive fullerene such that the electromagnetic energy emitted from the source is capable of impinging upon the superconductive fullerene with an energy that is greater than the band gap of the superconductive fullerene, wherein the superconductive fullerene is a halogenated fullerene, wherein the superconductive fullerene is a component of a superconductive composite.
15. The device of claim 14 , wherein the superconductive composite comprises a layer comprising a plurality of the fullerene deposited on a substrate.
16. The device of claim 14 , wherein the superconductive composite comprises a plurality of the fullerene encapsulated in a polymeric matrix.
17. The device of claim 14 , wherein the superconductive fullerene has a critical transition temperature when electromagnetic energy is emitted from the source that is about 10 K or more than when electromagnetic energy is not emitted from the source.
18. A device comprising a superconductive fullerene and an electromagnetic energy source, the electromagnetic energy source being in photonic communication with the superconductive fullerene such that the electromagnetic energy emitted from the source is capable of impinging upon the superconductive fullerene with an energy that is greater than the band gap of the superconductive fullerene, wherein the superconductive fullerene is a hydrogenated fullerene having a general structure of:
C n H x
in which n is 20 or greater, and
x=n−2.
19. The device of claim 18 , the superconductive fullerene being a component of a superconductive composite.
20. The device of claim 19 , wherein the superconductive composite comprises a layer comprising a plurality of the fullerene deposited on a substrate.
21. The device of claim 19 , wherein the superconductive composite comprises a plurality of the fullerene encapsulated in a polymeric matrix.
22. The device of claim 18 the device comprising a superconducting quantum interference device.
23. The device of claim 18 , wherein the superconductive fullerene has a critical transition temperature when electromagnetic energy is emitted from the source that is about 10 K or more than when electromagnetic energy is not emitted from the source.
24. A device comprising a superconductive fullerene and an electromagnetic energy source, the electromagnetic energy source being in photonic communication with the superconductive fullerene such that the electromagnetic energy emitted from the source is capable of impinging upon the superconductive fullerene with an energy that is greater than the band gap of the superconductive fullerene, wherein the superconductive fullerene is a halogenated fullerene, the device comprising a superconducting quantum interference device.