Display device with LED pixels
The disclosure relates to a display device, including a first substrate, a light emitting component, an insulating layer, and a conductive element. The first substrate has a driving component and a common line. The light emitting component is disposed on the first substrate and has a first electrode and a second electrode. The first electrode is electrically connected to the driving component. The insulating layer is disposed to the first substrate and has a first opening and a second opening. The first opening exposes the second electrode of the light emitting component. The second opening exposes the common line. The common line is electrically connected to the second electrode through the conductive element.
1. A display device, comprising:
a first substrate, having a driving component and a common line;
a light emitting component, disposed on the first substrate and having a first electrode and a second electrode, wherein the first electrode is electrically connected to the driving component;
an insulating layer, disposed on the first substrate and having a first opening and a second opening, wherein the first opening exposes the second electrode of the light emitting component, and the second opening exposes the common line; and
a conductive element, wherein the common line is electrically connected to the second electrode through the conductive element,
wherein the insulating layer comprises a light shielding column and a filling material, the filling material is filled between the light emitting component and the light shielding column, the filling material has the first opening, and the light shielding column has the second opening.
2. The display device as claimed in claim 1 , wherein the conductive element comprises a first portion and a second portion, the first portion is located in the second opening, the second portion is located outside the second opening, and a material of the first portion comprises metal.
3. The display device as claimed in claim 2 , wherein the second portion comprises a transparent conductive layer.
4. The display device as claimed in claim 2 , wherein the second portion is a composite layer comprising metal and a transparent conductive material.
5. The display device as claimed in claim 1 , wherein the conductive element fills the second opening.
6. The display device as claimed in claim 1 , further comprising a second substrate having a color filter film, wherein the light emitting component is located between the first substrate and the color filter film, and an orthogonal projection of the color filter film on the first substrate overlaps with an orthogonal projection of the light emitting component on the first substrate.
7. The display device as claimed in claim 6 , wherein the second substrate further comprises a light scattering layer or a quantum dot layer located between the color filter film and the light emitting component.
8. The display device as claimed in claim 1 , wherein a wavelength conversion layer is disposed on a light emitting surface of the light emitting component.
9. The display device as claimed in claim 8 , wherein the wavelength conversion layer further covers a side surface of the light emitting component.
10. The display device as claimed in claim 1 , wherein a color filter film is disposed on a light emitting surface of the light emitting component.
11. The display device as claimed in claim wherein an ultraviolet light resistant layer is disposed on a light emitting surface of the light emitting component.
12. The display device as claimed in claim 1 , wherein a light scattering layer is disposed on a light emitting surface of the light emitting component.
13. The display device as claimed in claim 1 , wherein the light emitting component is a micron-size light emitting diode.
14. The display device as claimed in claim 1 , wherein the driving component is an amorphous silicon thin film transistor, an oxide semiconductor thin film transistor, a low-temperature polycrystalline silicon thin film transistor, a silicon-based thin film transistor or a microcrystalline silicon thin film transistor.