Magnetoresistance element with increased operational range

1. A magnetoresistance element deposited upon a substrate, comprising:

a first stack portion having opposing first and second surfaces and comprising a first plurality of layers, the first stack portion having a first substantially linear response corresponding to an applied magnetic field over a first magnetic field strength range;

a second stack portion having opposing first and second surfaces and comprising a second plurality of layers, wherein the first surface of the second stack portion is disposed over the second surface of the first stack portion and the second stack portion has a second substantially linear response that is different than the first substantially linear response, the second substantially linear response corresponding to the applied magnetic field over a second magnetic field strength range; and

a third stack portion having opposing first and second surfaces and comprising a third plurality of layers, wherein the first surface of the third stack portion is disposed over the second surface of the second stack portion and the third stack portion has a third substantially linear response that is different than the first substantially linear response and the second substantially linear response,

wherein the first stack portion comprises a first pinned layer structure; a first spacer layer disposed over the first pinned layer structure; and a first free layer structure disposed over the first spacer layer,

wherein the first spacer layer is comprised of a first material having a first thickness, the first material and the first thickness selected to result in the first stack portion having the first substantially linear response.

2. The magnetoresistance element of claim 1 , wherein the first magnetic field strength range includes a negative magnetic field.

3. The magnetoresistance element of claim 1 , wherein the second magnetic field strength range includes a positive magnetic field.

4. The magnetoresistance element of claim 1 , wherein the first magnetic field strength range overlaps with one or more portions of the second magnetic field strength range.

5. The magnetoresistance element of claim 1 , wherein each of the layers of the first stack portion has a respective thickness and the thickness of at least one of the layers of the first stack portion is selected to result in the first stack portion having the first substantially linear response.

6. The magnetoresistance element of claim 1 , wherein each of the layers of the second stack portion has a respective thickness and the thickness of at least one of the layers of the second stack portion is selected to result in the second stack portion having the second substantially linear response.

7. The magnetoresistance element of claim 1 , wherein an ordering of the first plurality of layers in the first stack portion is selected to result in the first stack portion having the first substantially linear response, and wherein an ordering of the second plurality of layers in the second stack portion is selected to result in the second stack portion having the second substantially linear response.

8. The magnetoresistance element of claim 1 , wherein the first and second plurality of layers comprise a same number of layers.

9. The magnetoresistance element of claim 1 , wherein the first and second plurality of layers comprise a different number of layers.

10. The magnetoresistance element of claim 1 , wherein the magnetoresistance element is one of a giant magnetoresistance (GMR) element, a magnetic tunnel junction (MTJ) element and a tunneling magnetoresistance (TMR) element.

11. The magnetoresistance element of claim 1 , wherein the magnetoresistance element is provided in a magnetic field sensor.

12. The magnetoresistance element of claim 1 , wherein the first substantially linear response of the first stack portion results in the magnetoresistance element having a first sensitivity level to changes in magnetic field strength in response to the applied magnetic field being within the first magnetic field strength range,

wherein the second substantially linear response of the second stack portion results in the magnetoresistance element having a second sensitivity level to changes in the magnetic field strength in response to the applied magnetic field being within the second magnetic field strength range, the second sensitivity level being different in comparison to the first sensitivity level,

wherein the third substantially linear response of the third stack portion results in the magnetoresistance element having a third sensitivity level to changes in the magnetic field strength in response to the applied magnetic field being within the third magnetic field strength range, the third sensitivity level being different in comparison to the first and second sensitivity levels.

13. The magnetoresistance element of claim 1 , wherein the second stack portion comprises a second pinned layer structure; a second spacer layer disposed over the second pinned layer structure; and a second free layer structure disposed over the second spacer layer, wherein the second spacer layer is comprised of a second material having a second thickness, the second material and the second thickness selected to result in the second stack portion having the second substantially linear response.

14. The magnetoresistance element of claim 13 , wherein the first and second pinned layer structures include one respective pinned layer.

15. The magnetoresistance element of claim 13 , wherein the first and second pinned layer structures each comprise a respective synthetic antiferromagnetic (SAF) structure.

16. The magnetoresistance element of claim 13 , wherein the first and second spacer layers are comprised of Ruthenium (Ru).

17. The magnetoresistance element of claim 16 , wherein the second selected thickness of the second spacer layer is in a range between about 1.6 nanometers (nm) to about 1.8 nm, about 2.2 nm to about 2.4 nm, about 2.9 nm to about 3.1 nm, or about 3.5 nm to about 3.7 nm.

18. The magnetoresistance element of claim 16 , wherein the first selected thickness of the first spacer layer is about 1.3 nm, and wherein the second selected thickness of the second spacer layer is about 1.7 nm.

19. A magnetic field sensor, comprising:

a magnetoresistance element configured to generate first, second and third substantially linear responses to an applied magnetic field, wherein the first, second and third substantially linear responses have substantially zero offset with respect to an expected response of the magnetoresistance element at an applied magnetic field strength of about zero Oersteds,

wherein the magnetoresistance element comprises:

a first stack portion having opposing first and second surfaces and comprising a first plurality of layers, the first stack portion having the first substantially linear response;

a second stack portion having opposing first and second surfaces and comprising a second plurality of layers, wherein the first surface of the second stack portion is disposed over the second surface of the first stack portion and the second stack portion has the second substantially linear response that is different than the first substantially linear response; and

a third stack portion having opposing first and second surfaces and comprising a third plurality of layers, wherein the first surface of the third stack portion is disposed over the second surface of the second stack portion and the third stack portion has a third substantially linear response that is different than the first substantially linear response and the second substantially linear response;

a first electroconductive layer, the first electroconductive layer being in direct contact with the first surface of the second stack portion and being in direct contact with second surface of the first stack portion; and

a second electroconductive layer, the second electroconductive layer being in direct contact with the first surface of the third stack portion and being in direct contact with second surface of the second stack portion,

wherein the first electroconductive layer is a pinning layer, and

wherein the second electroconductive layer is a pinning layer.

20. The magnetic field sensor of claim 19 , wherein the first electroconductive layer comprises platinum manganese (PtMn).

21. The magnetic field sensor of claim 19 , wherein the first and second substantially linear responses are provided at least in part from the first electroconductive layer.

22. The magnetic field sensor of claim 19 , wherein the first substantially linear response of the first stack portion results in the magnetoresistance element having a first sensitivity level to changes in magnetic field strength in response to the applied magnetic field being within the first magnetic field strength range,

wherein the second substantially linear response of the second stack portion results in the magnetoresistance element having a second sensitivity level to changes in the magnetic field strength in response to the applied magnetic field being within the second magnetic field strength range, the second sensitivity level being different in comparison to the first sensitivity level,

wherein the third substantially linear response of the third stack portion results in the magnetoresistance element having a third sensitivity level to changes in the magnetic field strength in response to the applied magnetic field being within the third magnetic field strength range, the third sensitivity level being different in comparison to the first and second sensitivity levels.

23. The magnetic field sensor of claim 19 , wherein the first magnetic field strength range overlaps with one or more portions of the second magnetic field strength range.

24. The magnetic field sensor of claim 19 , wherein each of the layers of the first stack portion has a respective thickness and the thickness of at least one of the layers of the first stack portion is selected to result in the first stack portion having the first substantially linear response.

25. The magnetic field sensor of claim 19 , wherein each of the layers of the second stack portion has a respective thickness and the thickness of at least one of the layers of the second stack portion is selected to result in the second stack portion having the second substantially linear response.

26. The magnetic field sensor of claim 19 , wherein an ordering of the first plurality of layers in the first stack portion is selected to result in the first stack portion having the first substantially linear response, and wherein an ordering of the second plurality of layers in the second stack portion is selected to result in the second stack portion having the second substantially linear response.

27. The magnetic field sensor of claim 19 , wherein the first and second plurality of layers comprise a same number of layers.

28. The magnetic field sensor of claim 19 , wherein the first and second plurality of layers comprise a different number of layers.

29. A magnetoresistance element deposited upon a substrate, comprising:

a first stack portion having opposing first and second surfaces and comprising a first plurality of layers, the first stack portion having a first substantially linear response corresponding to an applied magnetic field over a first magnetic field strength range;

a second stack portion having opposing first and second surfaces and comprising a second plurality of layers, wherein the first surface of the second stack portion is disposed over the second surface of the first stack portion and the second stack portion has a second substantially linear response that is different than the first substantially linear response, the second substantially linear response corresponding to the applied magnetic field over a second magnetic field strength range;

a third stack portion having opposing first and second surfaces and comprising a third plurality of layers, wherein the first surface of the third stack portion is disposed over the second surface of the second stack portion and the third stack portion has a third substantially linear response that is different than the first substantially linear response and the second substantially linear response;

a first electroconductive layer, the first electroconductive layer being in direct contact with the first surface of the second stack portion and being in direct contact with second surface of the first stack portion; and

a second electroconductive layer, the second electroconductive layer being in direct contact with the first surface of the third stack portion and being in direct contact with second surface of the second stack portion,

wherein the first electroconductive layer is a pinning layer, and

wherein the second electroconductive layer is a pinning layer.

30. The magnetoresistance element of claim 29 , wherein the first electroconductive layer comprises platinum manganese (PtMn).

31. The magnetoresistance element of claim 29 , wherein the first and second substantially linear responses are provided at least in part from the first electroconductive layer.

32. The magnetoresistance element of claim 29 , wherein the first magnetic field strength range overlaps with one or more portions of the second magnetic field strength range.

33. The magnetoresistance element of claim 29 , wherein each of the layers of the first stack portion has a respective thickness and the thickness of at least one of the layers of the first stack portion is selected to result in the first stack portion having the first substantially linear response.

34. The magnetoresistance element of claim 29 , wherein each of the layers of the second stack portion has a respective thickness and the thickness of at least one of the layers of the second stack portion is selected to result in the second stack portion having the second substantially linear response.

35. The magnetoresistance element of claim 29 , wherein an ordering of the first plurality of layers in the first stack portion is selected to result in the first stack portion having the first substantially linear response, and wherein an ordering of the second plurality of layers in the second stack portion is selected to result in the second stack portion having the second substantially linear response.

36. The magnetoresistance element of claim 29 , wherein the first and second plurality of layers comprise a same number of layers.

37. The magnetoresistance element of claim 29 , wherein the first and second plurality of layers comprise a different number of layers.

38. A magnetoresistance element deposited upon a substrate, comprising:

a first stack portion having opposing first and second surfaces and comprising a first plurality of layers, the first stack portion having a first substantially linear response corresponding to an applied magnetic field over a first magnetic field strength range, wherein the first stack portion comprises:

a first pinned layer structure;

a first free layer structure in direct contact with a cap layer; and

a first spacer layer in contact with the first pinned layer structure and the first free layer structure;

a second stack portion having opposing first and second surfaces and comprising a second plurality of layers, wherein the first surface of the first stack portion is disposed over the second surface of the second stack portion and the second stack portion has a second substantially linear response that is different than the first substantially linear response, the second substantially linear response corresponding to the applied magnetic field over a second magnetic field strength range, the second stack portion comprises:

a second pinned layer structure;

a second free layer structure in direct contact with a seed layer; and

a second spacer layer in contact with the second pinned layer structure and the second free layer structure.

39. The magnetoresistance element of claim 38 , further comprising an electroconductive layer, the electroconductive layer being in direct contact with the first surface of the second stack portion and being in direct contact with second surface of the first stack portion,

wherein the electroconductive layer is a pinning layer.