Organic electroluminescent material and organic optoelectronic device
A compound and an organic optoelectronic device are provided. The compound has the following chemical formula (I): In the chemical formula (I), R 1 to R 10 are independently selected from hydrogen, deuterium, C 1 to C 30 alkyl, C 1 to C 30 heteroatom-substituted alkyl, C 6 to C 30 aryl, and C 2 to C 30 heteroaryl; X 1 is selected from O, S, substituted or unsubstituted imino, substituted or unsubstituted methylene, and substituted or unsubstituted silylene. A substituent is selected from hydrogen, deuterium, C 1 to C 30 alkyl, C 1 to C 30 heteroatom-substituted alkyl, C 6 to C 30 aryl, and C 2 to C 30 heteroaryl. A 1 and A 2 are chemical groups independently represented by the following chemical formula (II),
1. A compound of the following chemical formula (I):
wherein: in the chemical formula (I), R 1 to R 10 are independently selected from the group consisting of hydrogen, deuterium, C 1 to C 30 alkyl, C 1 to C 30 heteroatom-substituted alkyl, C 6 to C 30 aryl, and C 2 to C 30 heteroaryl;
X 1 is selected from the group consisting of O, S, substituted or unsubstituted imino, substituted or unsubstituted methylene, and substituted or unsubstituted silylene, wherein a substituent is selected from the group consisting of hydrogen, deuterium, C 1 to C 30 alkyl, C 1 to C 30 heteroatom-substituted alkyl, C 6 to C 30 aryl, and C 2 to C 30 heteroaryl; and
A 1 and A 2 are chemical groups independently represented by the following chemical formula (II):
wherein in the chemical formula (II),
R 11 to R 18 are independently selected from the group consisting of hydrogen, deuterium, C 1 to C 30 alkyl, C 1 to C 30 heteroatom-substituted alkyl, C 6 to C 30 aryl, and C 2 to C 30 heteroaryl, or are independently used as a single bond connected with a Nitrogen atom in the chemical formula (I),
X 2 to X 3 are independently selected from the group consisting of O, S, substituted or unsubstituted methylene,
wherein a substituent is selected from the group consisting of hydrogen, deuterium, C 1 to C 30 alkyl, C 1 to C 30 heteroatom-substituted alkyl, C 6 to C 30 aryl, and C 2 to C 30 heteroaryl, and
R 19 is selected from the group consisting of hydrogen, deuterium, C 1 to C 30 alkyl, C 1 to C 30 heteroatom-substituted alkyl, C 6 to C 30 aryl, and C 2 to C 30 heteroaryl.
2. The compound according to claim 1 , wherein:
X 1 is selected from the group consisting of O, S, —C(CH 3 ) 2 —, —C(Ph) 2 -, and —Si(CH 3 ) 2 —.
3. The compound according to claim 1 , wherein:
the chemical formula (II) includes a chemical formula of
wherein R 11 , R 12 , R 14 to R 18 each is independently selected from the group consisting of hydrogen, deuterium, C 1 to C 30 alkyl, C 1 to C 30 heteroatom-substituted alkyl, C 6 to C 30 aryl, and C 2 to C 30 heteroaryl.
4. The compound according to claim 3 , wherein:
X 2 is selected from the group consisting of
5. The compound according to claim 3 , wherein:
X 3 is selected from the group consisting of O, S, and substituted or unsubstituted methylene, and
a substituent is selected from the group consisting of hydrogen, deuterium, C 1 to C 30 alkyl, C 1 to C 30 heteroatom-substituted alkyl, C 6 to C 30 aryl, and C 2 to C 30 heteroaryl.
6. The compound according to claim 1 , comprising a compound selected from the following:
7. The compound according to claim 1 , wherein:
an energy difference between a lowest singlet excited state S 1 and a lowest triplet excited state T 1 of the compound is configured to be ΔEst, wherein ΔEst≤0.30 eV.
8. The compound according to claim 7 , wherein:
the energy difference between the lowest singlet excited state S 1 and the lowest triplet excited state T 1 of the compound is configured to be ΔEst, wherein ΔEst≤0.02 eV.
9. An organic optoelectronic device, comprising:
an anode;
a cathode; and
one or more organic thin film layers disposed between the anode and the cathode,
wherein at least one of the one or more organic thin film layers includes one or more compounds each having the following chemical formula (I):
wherein: in the chemical formula (I), R 1 to R 10 are independently selected from the group consisting of hydrogen, deuterium, C 1 to C 30 alkyl, C 1 to C 30 heteroatom-substituted alkyl, C 6 to C 30 aryl, and C 2 to C 30 heteroaryl;
X 1 is selected from the group consisting of O, S, substituted or unsubstituted imino, substituted or unsubstituted methylene, and substituted or unsubstituted silylene, wherein a substituent is selected from the group consisting of hydrogen, deuterium, C 1 to C 30 alkyl, C 1 to C 30 heteroatom-substituted alkyl, C 6 to C 30 aryl, and C 2 to C 30 heteroaryl; and
A 1 and A 2 are chemical groups independently represented by the following chemical formula (II):
wherein in the chemical formula (II),
R 11 to R 18 are independently selected from the group consisting of hydrogen, deuterium, C 1 to C 30 alkyl, C 1 to C 30 heteroatom-substituted alkyl, C 6 to C 30 aryl, and C 2 to C 30 heteroaryl, or are independently used as a single bond connected with a Nitrogen atom in the chemical formula (I),
X 2 to X 3 are independently selected from the group consisting of O, S, substituted or unsubstituted methylene,
wherein a substituent is selected from the group consisting of hydrogen, deuterium, C 1 to C 30 alkyl, C 1 to C 30 heteroatom-substituted alkyl, C 6 to C 30 aryl, and C 2 to C 30 heteroaryl, and
R 19 is selected from the group consisting of hydrogen, deuterium, C 1 to C 30 alkyl, C 1 to C 30 heteroatom-substituted alkyl, C 6 to C 30 aryl, and C 2 to C 30 heteroaryl.
10. The organic optoelectronic device according to claim 9 , wherein:
the one or more compounds are heat activated delayed fluorescence (TADF) materials.
11. The organic optoelectronic device according to claim 9 , wherein:
the at least one of the one or more organic thin film layers disposed between the anode and the cathode is a light-emitting layer, wherein the light-emitting layer includes the one or more compounds.
12. The organic optoelectronic device according to claim 11 , wherein:
the one or more compounds are used as a dopant material, a co-doping material, or a host material in the light-emitting layer.
13. The organic optoelectronic device according to claim 9 , wherein:
the one or more organic thin film layers further include at least one layer from the group of a hole transport layer, a hole injection layer, an electron blocking layer, a hole blocking layer, an electron transport layer, and an electron injection layer.
14. The organic optoelectronic device according to claim 13 , wherein:
the at least one layer from the group of the hole transport layer, the hole injection layer, the electron blocking layer, the hole blocking layer, the electron transport layer, and the electron injection layer includes the one or more compounds.
15. The organic optoelectronic device according to claim 13 , wherein:
the one or more organic thin film layers further include the hole transport layer disposed between the light-emitting layer and the anode.
16. The organic optoelectronic device according to claim 13 , wherein:
the one or more organic thin film layers further include the hole transport layer and the electron transport layer,
wherein the hole transport layer is disposed between the light-emitting layer and the anode, and
the electron transport layer is disposed between the light-emitting layer and the cathode.
17. The organic optoelectronic device according to claim 13 , wherein:
the one or more organic thin film layers further include the hole transport layer, the electron transport layer, the electron injection layer and the hole injection layer,
wherein the hole transport layer and the hole injection layer are disposed between the light-emitting layer and the anode, and
the electron transport layer and the electron injection layer are disposed between the light-emitting layer and the cathode.
18. The organic optoelectronic device according to claim 13 , wherein:
the one or more organic thin film layers further include the hole transport layer, the electron transport layer, the electron injection layer, the hole injection layer, the electron blocking layer, and the hole blocking layer,
wherein the electron blocking layer, the hole transport layer and the hole injection layer are disposed between the light-emitting layer and the anode, and
the hole blocking layer, the electron transport layer and the electron injection layer are disposed between the light-emitting layer and the cathode.