Semiconductor device having protection film with recess
View Patent ↗A semiconductor device may include a semiconductor substrate, a first metal film covering a surface of the semiconductor substrate; a protection film covering a peripheral portion of a surface of the first metal film; and a second metal film covering a range extending across a center portion of the surface of the first metal film and a surface of the protection film, wherein a recess may be provided in the surface of the protection film, and a part of the second metal film may be in contact with an inner surface of the recess.
1. A semiconductor device, comprising:
a semiconductor substrate;
a first metal film covering a surface of the semiconductor substrate;
a protection film covering a peripheral portion of a surface of the first metal film and including an opening in which a portion of the surface of the first metal film is located; and
a second metal film covering a range extending across the portion of the surface of the first metal film located in the opening and a surface of the protection film,
wherein
a recess is provided in the surface of the protection film,
a part of the second metal film is in contact with an inner surface of the recess, and
the recess extends in a ring shape in a top view of the semiconductor device so as to surround the opening.
2. The semiconductor device of claim 1 , further comprising a solder layer covering a surface of the second metal film.