Enhancement mode FET gate driver IC
A fully integrated GaN driver comprising a digital logic signal inverter, a level shifter circuit, a UVLO circuit, an output buffer stage, and (optionally) a FET to be driven, all integrated in a single package. The level shifter circuit converts a ground reference 0-5 V digital signal at the input to a 0-10 V digital signal at the output. The output drive circuitry includes a high side GaN FET that is inverted compared to the low side GaN FET. The inverted high side GaN FET allows switch operation, rather than a source follower topology, thus providing a digital voltage to control the main FET being driven by the circuit.
1. An integrated gate driver circuit for driving an enhancement mode GaN field effect transistor, comprising the following elements fully integrated in a single chip:
a gate driver, comprising:
a first logic inverter circuit;
a supply voltage level shifter circuit having an input and an output, the supply voltage level shifter circuit converting a ground reference 0-5 V digital signal at the input to a 0-10 V digital signal at the output, the supply voltage level shifter comprising two stages:
a first stage which acts as a bootstrap supply, comprising an enhancement mode GaN transistor with a source terminal connected to a gate terminal and to the supply voltage, the enhancement mode GaN transistor acting as a diode to charge a bootstrap capacitor; and
a second stage comprising a second logic inverter circuit with a supply of 10 V when its output is high and a supply of 5 V when its output is low; and
an output stage; and
an undervoltage lockout circuit connected to the gate driver, comprising:
a voltage reference circuit for generating a predetermined voltage reference; and
a comparator for receiving the output of the voltage reference circuit and for preventing operation of the gate driver if the supply voltage falls below said predetermined voltage reference.
2. The integrated gate driver circuit of claim 1 , wherein all transistors in the integrated gate driver circuit are enhancement mode GaN field-effect transistors.
3. An integrated circuit comprising the integrated gate driver circuit of claim 2 , integrated with the enhancement mode GaN field-effect transistor to be driven.
4. The integrated gate driver circuit of claim 1 , wherein the output stage comprises a half bridge circuit formed of a high side enhancement mode GaN transistor and a low side enhancement mode GaN transistor, with the high side enhancement mode GaN transistor inverted relative to the low side enhancement mode GaN transistor.
5. The integrated gate driver circuit of claim 1 , further comprising a synchronous bootstrap FET supply gate driver circuit.
6. The integrated gate driver circuit of claim 5 , wherein the synchronous bootstrap FET supply gate driver circuit is substantially the same as the gate driver without the output stage.