Optoelectronic device with an organic active layer

1. An optoelectronic device comprising an organic active layer provided for generating electromagnetic radiation, a first electrode provided for electrical contacting of the active layer and a second electrode provided for electrical contacting of the active layer, wherein:

the second electrode has a second electrode layer;

the first electrode comprises a first electrode layer and a first connection layer spaced at least in places from the first electrode layer;

the active layer is arranged at least in places between the first electrode layer and the first connection layer;

the first electrode comprises a plurality of through vias which extend through the active layer and form an electrical contact between the first electrode layer and the first connection layer;

the through vias adjoin one another at least in places, such that the through vias form a contiguous through via structure, wherein the contiguous through via structure subdivides the second electrode layer into a plurality of individual, mutually discontiguous sub-regions which are spaced apart from one another and wherein the contiguous through via structure subdivides the active layer into a plurality of individual, mutually discontiguous regions which are separate from one another; and

in operation of the semiconductor device, the through vias are electrically conductively connected to one another directly and not only by the first electrode layer or the first connection layer.

2. The optoelectronic device according to claim 1 , wherein the second electrode layer is arranged at least in places between the active layer and the first connection layer.

3. The optoelectronic device according to claim 1 , wherein the second electrode layer takes the form of a mirror layer for the electromagnetic radiation generated by the device.

4. The optoelectronic device according to claim 1 , wherein the first electrode layer is arranged between a radiation-transmissive carrier body and the active layer and the carrier body comprises a radiation exit face of the device on a side of the carrier body remote from the first electrode layer.

5. The optoelectronic device according to claim 4 , wherein the first connection layer and the second electrode layer are arranged on a side of the active layer remote from the carrier body and overlap in plan view onto the carrier body.

6. The optoelectronic device according to claim 1 , wherein the active layer and the second electrode layer comprise at least one cutout to the first electrode layer, in which cutout is arranged at least one of the through vias.

7. The optoelectronic device according to claim 6 , wherein:

within the cutout, a first insulation layer for electrical insulation is arranged between the at least one through via and the active layer and a second insulation layer for electrical insulation is arranged between the through via and the second electrode layer;

within the cutout, the first insulation layer and the second insulation layer adjoin one another; and

outside the cutout, the second insulation layer is arranged between the first connection layer and the second electrode layer.

8. The optoelectronic device according to claim 1 , wherein:

the second electrode comprises a second connection layer, wherein the first connection layer is arranged between the second connection layer and the second electrode layer; and

the second electrode comprises a plurality of further through vias for electrical contacting of the second connection layer with the second electrode layer, wherein the further through vias extend through the first connection layer.

9. The optoelectronic device according to claim 8 , wherein a further insulation layer for electrical insulation is arranged between the first connection layer and the second connection layer and between the first connection layer and the further through vias, wherein the further insulation layer directly adjoins the second insulation layer at least in places.

10. The optoelectronic device according to claim 1 , wherein:

the second electrode comprises a second connection layer and a plurality of further through vias,

the first connection layer is arranged between the second connection layer and the second electrode layer, and

the further through vias extend in the vertical direction from the second connection layer completely through the first connection layer to the sub-regions of the first electrode layer, so that the sub-regions of the second electrode layer being spaced from one another are electrically conductively connected with one another by the further through vias.

11. The optoelectronic device according to claim 1 , wherein:

the second electrode comprises a second connection layer and a plurality of further through vias,

the first connection layer is arranged between the second connection layer and the second electrode layer, and

the further through vias extend in the vertical direction from the second connection layer completely through the first connection layer to the sub-regions of the first electrode layer, so that the sub-regions of the active layer are electrically conductively connected with one another by the further through vias, the subregions of the second electrode layer and the second connection layer.

12. An optoelectronic device comprising an organic active layer provided for generating electromagnetic radiation, a first electrode provided for electrical contacting of the active layer and a second electrode provided for electrical contacting of the active layer, wherein:

the second electrode has a second electrode layer;

the first electrode comprises a first electrode layer and a first connection layer spaced at least in places from the first electrode layer;

the active layer is arranged at least in places between the first electrode layer and the first connection layer;

the first electrode comprises a contiguous through via structure which extends through the active layer and forms an electrical contact between the first electrode layer and the first connection layer;

the contiguous through via structure subdivides the second electrode layer into a plurality of individual, mutually discontiguous sub-regions which are spaced apart from one another;

the contiguous through via structure subdivides the active layer into a plurality of individual, mutually discontiguous regions which are separate from one another;

the second electrode comprises a second connection layer, wherein the first connection layer is arranged between the second connection layer and the second electrode layer;

the second electrode comprises a plurality of further through vias for electrical contacting of the second connection layer with the second electrode layer; and

the separate sub-regions of the second connection layer in each case adjoin one of the further through vias of the second electrode.

13. The optoelectronic device according to claim 12 , wherein the first electrode comprises a plurality of through vias which extend through the active layer, said through vias adjoining one another and forming the contiguous through via structure.

14. The optoelectronic device according to claim 13 , wherein the through vias of the first electrode are electrically conductively connected to one another directly and not only by the first electrode layer or the first connection layer.

15. An optoelectronic device comprising an organic active layer provided for generating electromagnetic radiation, a first electrode provided for electrical contacting of the active layer and a second electrode provided for electrical contacting of the active layer, wherein:

the second electrode has a second electrode layer;

the first electrode comprises a first electrode layer and a first connection layer spaced at least in places from the first electrode layer;

the active layer is arranged at least in places between the first electrode layer and the first connection layer;

the first electrode comprises a contiguous through via structure which extends through the active layer and forms an electrical contact between the first electrode layer and the first connection layer;

the contiguous through via structure subdivides the second electrode layer into a plurality of sub-regions which are spaced from one another;

the contiguous through via structure subdivides the active layer into a plurality of regions which are separate from one another;

the second electrode comprises a second connection layer, wherein the first connection layer is arranged between the second connection layer and the second electrode layer;

the second electrode comprises a plurality of further through vias for electrical contacting of the second connection layer with the second electrode layer; and

the separate sub-regions of the second connection layer in each case adjoin one of the further through vias of the second electrode; and

the further through vias extend in the vertical direction from the second connection layer completely through the first connection layer to the sub-regions of the first electrode layer, so that:

i. the sub-regions of the second electrode layer being spaced from one another are electrically conductively connected with one another by the further through vias; or

ii. the sub-regions of the active layer are electrically conductively connected with one another by the further through vias, the sub-regions of the second electrode layer and the second connection layer.