Laser diode assembly
A laser diode arrangement comprising: at least one semiconductor substrate; at least two laser stacks based on the AlInGaN material system, each laser stack having an active zone, wherein at least one of the at least two laser stacks comprises a two-dimensional structure of laser diodes; and at least one intermediate layer. The laser stacks and the intermediate layer are grown monolithically on the semiconductor substrate. The intermediate layer is arranged between the laser stacks. The active zone of the first laser stack can be actuated separately from the active zone of the at least one further laser stack.
1. A laser diode arrangement comprising:
at least one semiconductor substrate;
at least two laser stacks based on an AlInGaN material system, each laser stack having an active zone, wherein at least one of the at least two laser stacks comprises two laser diodes arranged horizontally in a two-dimensional structure of laser diodes; and
at least one intermediate layer,
wherein the laser stacks and the intermediate layer are grown monolithically on the semiconductor substrate,
wherein the intermediate layer is arranged between the laser stacks, and
wherein the active zone of a first laser stack can be actuated separately from the active zone of an at least one further laser stack.
2. The laser diode arrangement as claimed in claim 1 , wherein separate actuation of the active zones via separate n-contacts is provided.
3. The laser diode arrangement as claimed in claim 2 , wherein separate actuation of the active zones via a common p-contact is provided.
4. The laser diode arrangement as claimed in claim 1 , wherein separate actuation of the active zones via separate p-contacts is provided.
5. The laser diode arrangement as claimed in claim 4 , wherein separate actuation of the active zones via a common n-contact is provided.
6. The laser diode arrangement as claimed in claim 1 , wherein each laser stack with the associated active zone has at least two laser diodes.
7. The laser diode arrangement as claimed in claim 1 , wherein the intermediate layer has a tunnel diode.
8. The laser diode arrangement as claimed in claim 1 , wherein the intermediate layer has an insulator.
9. The laser diode arrangement as claimed in claim 6 , wherein the active zones are configured such that laser diodes from different laser stacks emit electromagnetic radiation in wavelength ranges differing from one another.
10. The laser diode arrangement as claimed in claim 1 , wherein the laser diode arrangement has at least two light sources, formed from the laser stacks, having different semiconductor substrates.
11. The laser diode arrangement as claimed in claim 9 , wherein a vertical spacing between the laser diodes is less than about 20 μm.
12. The laser diode arrangement as claimed in claim 1 , wherein the layer facing the semiconductor substrate, which layer adjoins the active zone, is an n-waveguide and the layer facing away from the semiconductor substrate, which layer adjoins the active zone, is a p-waveguide.
13. The laser diode arrangement as claimed in claim 1 , wherein a current shield is provided between two laser stacks.
14. The laser diode arrangement as claimed in claim 1 , wherein a horizontal spacing between two laser diodes is less than about 100μm.
15. The laser diode arrangement as claimed in claim 1 , wherein the laser diodes of the two-dimensional structure of laser diodes are produced by gain guidance.
16. The laser diode arrangement as claimed in claim 1 , wherein the intermediate layer has a tunnel diode having a low ohmic resistance.
17. The laser diode arrangement as claimed in claim 1 , wherein the intermediate layer has a crystalline electrically insulating layer.
18. The laser diode arrangement as claimed in claim 6 , wherein a vertical spacing between the laser diodes is less than about 2 μm.