Organic light emitting display panel and organic light emitting display apparatus

1. A method for manufacturing an organic light emitting display panel, comprising:

providing a substrate; and

forming a plurality of light emitting units on the substrate, wherein

each of the light emitting units comprises an anode, a first auxiliary function structure, a light emitting structure, and a cathode, wherein the anode, the first auxiliary functional structure, the light emitting structure and the cathode are successively laminated,

wherein the first auxiliary functional structures of different light emitting units are arranged separate from one another, the anodes of different light emitting units are arranged separate from one another, and the light emitting structures of different light emitting units are arranged separate from one another;

wherein the plurality of light emitting units comprises a light emitting unit for emitting red light, a light emitting unit for emitting green light, and a light emitting unit for emitting blue light;

wherein the thickness of the first auxiliary functional structure corresponding to the light emitting unit for emitting red light is greater than or equal to 700 Å and less than or equal to 1100 Å;

wherein the thickness of the first auxiliary functional structure corresponding to the light emitting unit for emitting green light is greater than or equal to 200 Å and less than or equal to 400 Å; and

wherein the thickness of the first auxiliary functional structure corresponding to the light emitting unit for emitting blue light is greater than or equal to 100 Å and less than or equal to 300 Å;

wherein each of the plurality of light emitting units further comprises a third auxiliary functional structure, wherein the third auxiliary functional structure is disposed between the light emitting structure and the cathode, and wherein the third auxiliary functional structure comprises at least one of a hole blocking layer and a first electron transporting layer;

wherein the third auxiliary functional structures of different light emitting units are arranged separated from each other; and

wherein the light emitting structure, the first auxiliary functional structure and the third auxiliary function structure of the same light emitting unit are formed through evaporation with a same mask.

2. The method of claim 1 , wherein the first auxiliary functional structure comprises at least one of a hole transporting layer and an electron blocking layer.

3. The method of claim 1 , wherein the first auxiliary functional structure is made of a P-type material.

4. The method of claim 1 , wherein the light emitting structure comprises at least one host material and at least one guest dopant material.

5. The method of claim 4 , wherein the light emitting structure comprises two host materials that are respectively a P-type material and a N-type material.

6. The method of claim 1 , further comprising a second auxiliary functional structure, wherein the second auxiliary functional structure is disposed between the anode and the first auxiliary functional structure.

7. The method of claim 6 , wherein the second auxiliary functional structure comprises a hole injection layer; and

the thickness of the hole injection layer is greater than or equal to 800 Å and less than or equal to 1000 Å.

8. The method of claim 7 , wherein the second auxiliary functional structure further comprises a buffer layer, and wherein the buffer layer is disposed between the hole injection layer and the anode.

9. The method of claim 8 , wherein the buffer layer comprises at least one host material and at least one guest dopant material.

10. The method of claim 9 , wherein the host material of the buffer layer is the same as the host material of the hole injection layer, and wherein the guest dopant material of the buffer layer comprises a P-type material.

11. The method of claim 10 , wherein a volume percent of the P-type material and the host material in the buffer layer is greater than or equal to 0.5% and less than or equal to 10% by volume.

12. The method of claim 8 , wherein the thickness of the buffer layer is greater than or equal to 50 Å and less than or equal to 100 Å.

13. The method of claim 1 , wherein the third auxiliary functional structure comprises a N-type material.

14. The method of claim 1 , wherein the thickness of the third auxiliary functional structure is 200 Å to 400 Å.