Magnetoresistance structure patterning

1. A method, comprising:

depositing on a substrate a magnetoresistance stack comprising a plurality of layers comprising a first set of one or more magnetoresistance layers and a second set of one or more magnetoresistance layers;

depositing a hard mask on the magnetoresistance stack;

depositing photoresist on the hard mask;

patterning the photoresist using photolithography to expose portions of the hard mask;

etching the exposed portions of the hard mask to expose a portion of the magnetoresistance stack;

stripping the photoresist;

etching the first set of one or more magnetoresistance layers of the exposed portion of the magnetoresistance stack to form an intermediate structure comprising the hard mask and the first set of one or more magnetoresistance layers;

depositing an etch barrier on the intermediate structure and the second set of one or more magnetoresistance layers;

etching the etch barrier and a portion of the second set of one or more magnetoresistance layers to the substrate to form a pillar structure comprising side walls comprising the etch barrier, the side walls disposed on the second set of one or more magnetoresistance layers; and

depositing an endcap comprising silicon nitride on the pillar structure.

2. The method of claim 1 , wherein depositing on the substrate the magnetoresistance stack comprises depositing one of a tunneling magnetoresistance (TMR) stack or a magnetic tunnel junction (MTJ) stack.

3. The method of claim 1 , wherein depositing the magnetoresistance stack on the substrate comprises depositing the magnetoresistance stack comprising a layer of magnesium oxide.

4. The method of claim 1 , wherein depositing the magnetoresistance stack on the substrate comprises depositing the magnetoresistance stack comprising a layer of silicon nitride.

5. The method of claim 1 , wherein depositing the magnetoresistance stack on the substrate comprises depositing the magnetoresistance stack on the substrate, the substrate comprising one of silicon dioxide or silicon nitride.

6. The method of claim 1 , wherein depositing a hard mask on the magnetoresistance stack comprises depositing the hard mask comprising silicon dioxide.

7. The method of claim 1 , wherein partially etching the first set of one or more magnetoresistance layers of the exposed portion of the magnetoresistance stack comprises partially etching using an ion beam etching process.

8. The method of claim 1 , wherein depositing an etch barrier comprises depositing the etch barrier comprising silicon nitride.

9. The method of claim 1 , wherein etching the portion of the etch barrier and the portion of the second set of one or more magnetoresistance layers comprises etching using an ion beam etching process.

10. The method of claim 1 , wherein depositing on the substrate a magnetoresistance stack having a plurality of layers comprising the first set of one or more magnetoresistance layers and the second set of one or more magnetoresistance layers comprises depositing on the substrate the magnetoresistance stack having the plurality of layers comprising:

the first set of one or more magnetoresistance layers comprising:

one or more active elements;

a tunneling barrier layer; and

the second set of one or more magnetoresistance layers comprising an active element.

11. A magnetoresistance structure comprising:

a magnetoresistance stack comprising a plurality of layers comprising a first set of one or more magnetoresistance layers and a second set of one or more magnetoresistance layers;

side walls attached to the sides of the first set of one or more magnetoresistance layers and disposed on the second set of one or more magnetoresistance layers; and

an endcap comprising silicon nitride on the magnetoresistance stack and the side walls.

12. The magnetoresistance structure of claim 11 , wherein the magnetoresistance stack comprises one of a tunneling magnetoresistance (TMR) stack or a magnetic tunnel junction (MTJ) stack.

13. The magnetoresistance structure of claim 11 , wherein the magnetoresistance stack comprises a layer of magnesium oxide.

14. The magnetoresistance structure of claim 11 , wherein the magnetoresistance stack comprises a layer of silicon nitride.

15. The magnetoresistance structure of claim 11 , further comprising a substrate on which the magnetoresistance stack is disposed and wherein the substrate comprises one of silicon dioxide or silicon nitride.

16. The magnetoresistance structure of claim 11 , wherein the side walls comprise silicon nitride.

17. The magnetoresistance structure of claim 11 , wherein:

the first set of one or more magnetoresistance layers comprises:

one or more active elements;

a tunneling barrier layer; and

the second set of one or more magnetoresistance layers comprising an active element.

18. A magnetoresistance structure comprising:

a magnetoresistance stack comprising a plurality of layers comprising a first set of one or more magnetoresistance layers and a second set of one or more magnetoresistance layers, wherein the magnetoresistance stack comprises a layer of silicon nitride; and

side walls attached to the sides of the first set of one or more magnetoresistance layers and disposed on the second set of one or more magnetoresistance layers.

19. The magnetoresistance structure of claim 18 , wherein the magnetoresistance stack comprises one of a tunneling magnetoresistance (TMR) stack or a magnetic tunnel junction (MTJ) stack.

20. The magnetoresistance structure of claim 18 , further comprising an endcap on the magnetoresistance stack and the side walls.

21. The magnetoresistance structure of claim 20 , wherein the endcap comprises silicon nitride.

22. The magnetoresistance structure of claim 18 , wherein the magnetoresistance stack comprises a layer of magnesium oxide.

23. The magnetoresistance structure of claim 18 , further comprising a substrate on which the magnetoresistance stack is disposed and wherein the substrate comprises one of silicon dioxide or silicon nitride.

24. The magnetoresistance structure of claim 18 , wherein the side walls comprise silicon nitride.

25. The magnetoresistance structure of claim 18 , wherein:

the first set of one or more magnetoresistance layers comprises:

one or more active elements;

a tunneling barrier layer; and

the second set of one or more magnetoresistance layers comprising an active element.