PLANAR COIL
Individual coils as well as two or more coils arranged one over the other or one coil in combination with a sensor, which can be integrated into planar semiconductor technology are described. A coil comprises a turn and two supply lines for supplying current to the coil. The turn and the supply lines are formed from a metal layer. One of the two supply lines is connected to a first end of the turn and the other of the two supply lines is connected to a second end of the turn.
1 . A coil configured for integration into planar semiconductor technology, the coil comprising:
a turn and two supply lines for supplying current to the coil, the turn and the supply lines being formed from a metal layer and one of the two supply lines being connected to a first end of the turn and the other of the two supply lines being connected to a second end of the turn.
2 . The coil according to claim 1 , wherein the coil and the supply lines substantially comprise a thickness of the metal layer.
3 . The coil according to claim 1 , wherein the supply lines are arranged to extend outwardly from the turn.
4 . The coil according to claim 1 , comprising at least two turns, wherein one of the two supply lines connects a first end of each turn and the other of the supply lines connects a second end of each turn.
5 . The coil according to claim 4 , wherein the turns are arranged in parallel by the supply lines.
6 . The coil according to claim 4 , wherein the turns are concentrically arranged.
7 . The coil according to claim 4 , wherein each turn is formed by a conductor track and the conductor track has a width.
8 . The coil according to claim 7 , wherein the width of each conductor track of the turns is the same.
9 . The coil according to claim 7 , wherein the width of each conductor track of the turns is different.
10 . The coil according to claim 7 , wherein the width of the conductor track of the external turns is greater than the width of the conductor track of the internal turns.
11 . The coil according to claim 1 , wherein the turn is formed by a conductor track that has a width and a thickness, and a ratio between the thickness and width of the conductor track encompasses a range of about 1:25 to 1:5.
12 . The coil according to claim 1 , wherein a/the width of a/the conductor track of a/the turn encompasses a range of about 5 to 100 μm and/or a/the thickness of a/the conductor track of a/the turn encompasses a range about 0.2 to 20 μm.
13 . The coil according to claim 1 , wherein the coil comprises a planar coil or a flat coil.
14 . A coil configured for integration into planar semiconductor technology, wherein the coil comprises a number of turns arranged in parallel and the coil is formed from a metal layer.
15 . A coil configured for integration into planar semiconductor technology, wherein the coil comprises a turn and the coil is formed from a metal layer, wherein the turn is formed by a conductor track that has a width and a thickness and the ratio between the thickness and width encompasses a range of about 1:25 to 1:5.
16 . A coil configured for integration into planar semiconductor technology, wherein the coil comprises a turn and the coil is formed from a metal layer, wherein the turn defines an angle of at least 270° and/or an angle of 350° at most.
17 . A coil arrangement, wherein the coil arrangement comprises two coils according to claim 1 , wherein the two coils are arranged above one another.
18 . A coil arrangement, wherein the coil arrangement comprises at least one coil according to claim 1 and a sensor for detecting a magnetic field generated by the coil.