Method for synthesizing core shell nanocrystals at high temperatures
View Patent ↗The invention is in the field of nanostructure synthesis. The invention relates to methods for producing nanostructures, particularly Group III-V and Group II-VI semiconductor nanostructures. The invention also relates to high temperature methods of synthesizing nanostructures comprising simultaneous injection of cores and shell precursors.
1. A method of producing a nanostructure comprising:
(a) introducing a solution comprising at least one first precursor for a first shell, wherein the at least one precursor for a first shell is a zinc source selected from the group consisting of zinc oleate, zinc hexanoate, zinc octanoate, zinc laurate, zinc palmitate, zinc stearate, zinc dithiocarbamate, or mixtures thereof;
(b) raising the temperature of the solution obtained in (a); and
(c) simultaneously adding at least one second precursor for a first shell and a nanocrystal core to the solution of (a), wherein at least one of the second precursors for a first shell in (c) is different from the first precursor for a first shell in (a);
to provide a nanostructure.
2. The method of claim 1 , wherein the nanocrystal core is a InP, InZnP, InGaP, CdSe, CdS, CdSSe, CdZnSe, CdZnS, ZnSe, ZnSSe, InAs, InGaAs, or InAsP nanocrystal.
3. The method of claim 1 , wherein the nanocrystal core is a InP nanocrystal.
4. The method of claim 1 , wherein the zinc source is zinc stearate or zinc oleate.
5. The method of claim 1 , wherein the second precursor for a first shell is a sulfur source, a selenium source, or a tellurium source.
6. The method of claim 5 , wherein the selenium source is selected from the group consisting of trioctylphosphine selenide, tri(n-butyl)phosphine selenide, tri(sec-butyl)phosphine selenide, tri(tert-butyl)phosphine selenide, trimethylphosphine selenide, triphenylphosphine selenide, diphenylphosphine selenide, phenylphosphine selenide, tricyclophosphine selenide, cyclohexylphosphine selenide, 1-octaneselenol, 1-dodecaneselenol, selenophenol, elemental selenium, bis(trimethylsilyl) selenide, and mixtures thereof.
7. The method of claim 5 , wherein the selenium source is tri(n-butyl)phosphine selenide or trioctylphosphine selenide.
8. The method of claim 5 , wherein the sulfur source is selected from the group consisting of elemental sulfur, octanethiol, dodecanethiol, octadecanethiol, tributylphosphine sulfide, cyclohexyl isothiocyanate, α-toluenethiol, ethylene trithiocarbonate, allyl mercaptan, bis(trimethylsilyl) sulfide, trioctylphosphine sulfide, and mixtures thereof.
9. The method of claim 5 , wherein the sulfur source is octanethiol.
10. The method of claim 1 , wherein the temperature in (b) is raised to between about 200° C. and 350° C.
11. The method of claim 1 , wherein the temperature in (b) is raised to between about 300° C. and about 330° C.
12. The method of claim 1 , wherein the temperature in (b) is maintained for between 2 minutes and 240 minutes.
13. The method of claim 1 , further comprising raising, lowering, or maintaining the temperature after the simultaneous addition in (c) to provide a temperature between about 250° C. and 350° C.
14. The method of claim 1 , wherein the at least one second precursor for a first shell is a sulfur source or a selenium source, and wherein the temperature in (b) is raised to between about 280° C. and 330° C.
15. The method of claim 1 , further comprising:
(d) simultaneously adding at least two precursors for a second shell to the solution of (c), wherein at least one of the precursors for a second shell in (d) is different from the at least one second precursor for a first shell in (c).
16. The method of claim 15 , wherein the at least two precursors for a second shell in (d) are selected from the group consisting of a zinc source, a sulfur source, a selenium source, a cadmium source, and a tellurium source.
17. The method of claim 15 , further comprising raising, lowering, or maintaining the temperature after the simultaneous addition in (d) to provide a temperature between about 250° C. and 350° C.
18. The method of claim 15 , wherein the at least one second precursor for a first shell is a selenium source, wherein the temperature in (b) is raised to between about 300° C. and about 330° C., and wherein at least one of the precursors for a second shell is a sulfur source.
19. A method for producing a nanostructure comprising:
(a) simultaneously adding at least one precursor for a first shell and a nanocrystal core to a solution wherein the solution is at a temperature between 200° C. and 350° C.; and
(b) simultaneously adding at least two precursors for a second shell to the solution of (a), wherein at least one of the precursors for a second shell in (b) is different from the precursor for a first shell in (a);
to provide a nanostructure.
20. The method of claim 19 , wherein the nanocrystal core is a InP, InZnP, InGaP, CdSe, CdS, CdSSe, CdZnSe, CdZnS, ZnSe, ZnSSe, InAs, InGaAs, or InAsP nanocrystal.
21. The method of claim 19 , wherein the nanocrystal core is a InP nanocrystal.
22. The method of claim 19 , wherein the at least one precursor for a first shell is a sulfur source, a selenium source, or a tellurium source.
23. The method of claim 22 , wherein the selenium source is selected from the group consisting of trioctylphosphine selenide, tri(n-butyl)phosphine selenide, tri(sec-butyl)phosphine selenide, tri(tert-butyl)phosphine selenide, trimethylphosphine selenide, triphenylphosphine selenide, diphenylphosphine selenide, phenylphosphine selenide, tricyclophosphine selenide, cyclohexylphosphine selenide, 1-octaneselenol, 1-dodecaneselenol, selenophenol, elemental selenium, bis(trimethylsilyl) selenide, and mixtures thereof.
24. The method of claim 22 , wherein the sulfur source is selected from the group consisting of elemental sulfur, octanethiol, dodecanethiol, octadecanethiol, tributylphosphine sulfide, cyclohexyl isothiocyanate, α-toluenethiol, ethylene trithiocarbonate, allyl mercaptan, bis(trimethylsilyl) sulfide, trioctylphosphine sulfide, and mixtures thereof.
25. The method of claim 19 , wherein the temperature in (a) is between about 250° C. and about 310° C.
26. The method of claim 19 , wherein one of the at least two precursors for a second shell in (b) is a zinc source, a cadmium source, a sulfur source, a selenium source, or a tellurium source.
27. The method of claim 26 , wherein the zinc source is selected from the group consisting of zinc oleate, zinc hexanoate, zinc octanoate, zinc laurate, zinc palmitate, zinc stearate, zinc dithiocarbamate, or mixtures thereof.
28. The method of claim 19 , further comprising raising, lowering, or maintaining the temperature after the simultaneous addition in (b) to provide a temperature between about 200° C. and 350° C.
29. The method of claim 28 , wherein the temperature is maintained for between 2 minutes and 240 minutes.
30. The method of claim 19 , wherein the at least one precursor for a first shell is a selenium source, wherein the at least two precursors for a second shell are a zinc source and a sulfur source, and wherein the temperature in (a) is between about 280° C. and about 310° C.