Method for producing a conversion lamina and conversion lamina

1. A conversion lamina comprising:

a base material; and

a conversion substance embedded in the base material, wherein the conversion lamina has a thickness between 60 μm inclusive and 170 μm inclusive, wherein the conversion lamina is free from a radiation-emitting semiconductor component, and

wherein the conversion lamina is configured to be applied on a radiation-emitting semiconductor component.

2. The conversion lamina according to claim 1 , wherein the thickness is between 90 μm inclusive and 110 μm inclusive.

3. The conversion lamina according to claim 1 , wherein a surface of the conversion lamina comprises a mesh structure.

4. The conversion lamina according to claim 1 , wherein a proportion of the conversion substance in the base material is between 55 wt % inclusive and 70 wt % inclusive.

5. The conversion lamina according to claim 1 , wherein the base material contains silicone.

6. The conversion lamina according to claim 1 , wherein a proportion of the conversion substance in the base material is between 55 wt % inclusive and 70 wt % inclusive, wherein the base material contains silicone, and wherein a surface of the conversion lamina comprises a mesh structure.

7. The conversion lamina according to claim 1 , further comprising a recess arranged in an intended bonding pad region of a radiation-emitting semiconductor component.

8. The conversion lamina according to claim 1 , wherein the conversion lamina comprises sharp edges.

9. A conversion lamina for a radiation-emitting semiconductor component, the conversion lamina comprising:

a base material; and

a conversion substance embedded in the base material, wherein the conversion lamina has a thickness between 6 μm inclusive and 170 μm inclusive, wherein the conversion lamina is free from a radiation-emitting semiconductor component, and

wherein a surface of the conversion lamina comprises a mesh structure.

10. The conversion lamina according to claim 9 , wherein the thickness is between 90 μm inclusive and 110 μm inclusive.

11. The conversion lamina according to claim 9 , wherein a proportion of the conversion substance in the base material is between 55 wt % inclusive and 70 wt % inclusive.

12. The conversion lamina according to claim 9 , wherein the base material contains silicone.

13. The conversion lamina according to claim 9 , wherein a proportion of the conversion substance in the base material is between 55 wt % inclusive and 70 wt % inclusive, and wherein the base material contains silicone.

14. The conversion lamina according to claim 9 , further comprising a recess arranged in an intended bonding pad region of a radiation-emitting semiconductor component.

15. The conversion lamina according to claim 9 , wherein the conversion lamina comprises sharp edges.

16. A conversion lamina for a radiation-emitting semiconductor component, the conversion lamina comprising:

a base material;

a conversion substance embedded in the base material, wherein the conversion lamina has a thickness between 60 μm inclusive and 170 μm inclusive, and wherein the conversion lamina is free from a radiation-emitting semiconductor component; and

a recess arranged in an intended bonding pad region of a radiation-emitting semiconductor component.

17. The conversion lamina according to claim 16 , wherein the thickness is between 90 μm inclusive and 110 μm inclusive.

18. The conversion lamina according to claim 16 , wherein a proportion of the conversion substance in the base material is between 55 wt % inclusive and 70 wt % inclusive.

19. The conversion lamina according to claim 16 , wherein a proportion of the conversion substance in the base material is between 55 wt % inclusive and 70 wt % inclusive, wherein the base material contains silicone, and wherein a surface of the conversion lamina comprises a mesh structure.

20. The conversion lamina according to claim 16 , wherein the base material contains silicone.