Semiconductor light emitting device
A semiconductor light emitting device includes a light-transmissive support having a first surface including a first region and a second region surrounding the first region, and a second surface opposing the first surface, and including a wavelength conversion material, a semiconductor stack disposed above the first region of the first surface of the light-transmissive support, and including first and second conductivity-type semiconductor layers and an active layer disposed therebetween, a light-transmitting bonding layer disposed between the light-transmissive support and the semiconductor stack, a light blocking film disposed above the second region of the light-transmissive support to surround the semiconductor stack, and first and second electrodes respectively disposed on portions of the first and second conductivity-type semiconductor layers.
1. A semiconductor light emitting device comprising:
a light-transmissive support having a first surface including a first region and a second region surrounding the first region, and a second surface opposing the first surface, the light-transmissive support including a wavelength conversion material;
a semiconductor stack on the first region of the first surface of the light-transmissive support, and including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer between the first and second conductivity-type semiconductor layers;
a light-transmitting bonding layer between the light-transmissive support and the semiconductor stack;
a light blocking film on the second region of the light-transmissive support and surrounding the semiconductor stack;
a first electrode and a second electrode respectively on a portion of the first conductivity-type semiconductor layer and a portion of the second conductivity-type semiconductor layer;
an insulating layer covering the semiconductor stack to have first and second openings defining the portions of the first and second conductivity-type semiconductor layers, respectively, and extending above the second region of the light-transmissive support; wherein:
the insulating layer has a third opening on the second region of the light-transmissive support and surrounding the semiconductor stack;
the light blocking film extends from the third opening of the insulating layer along a surface of the insulating layer; and
the light blocking film is in contact with the light-transmitting bonding layer through the third opening.
2. The semiconductor light emitting device of claim 1 , wherein the light-transmissive support comprises a glass substrate including the wavelength conversion material.
3. The semiconductor light emitting device of claim 1 , wherein the light-transmissive support comprises a ceramic substrate including a phosphor.
4. The semiconductor light emitting device of claim 1 , wherein the light blocking film comprises a same material as a material of a portion of the first and second electrodes.
5. The semiconductor light emitting device of claim 1 , wherein the wavelength conversion material of the light-transmissive support is a first wavelength conversion material configured to convert a portion of light generated in the active layer into light of a first wavelength, and the light-transmitting bonding layer includes a second wavelength conversion material configured to convert a portion of light generated in the active layer into light of a second wavelength, the second wavelength being different from the first wavelength.
6. The semiconductor light emitting device of claim 1 , wherein the light-transmitting bonding layer comprises spin-on-glass.
7. The semiconductor light emitting device of claim 1 , wherein the semiconductor stack comprises a concave-convex portion on a surface of the semiconductor stack contacting the light-transmitting bonding layer.
8. A semiconductor light emitting device comprising:
a light-transmissive support having a first surface including a first region and a second region surrounding the first region, and a second surface opposing the first surface, the light-transmissive support including a bonding material containing a wavelength conversion material;
a semiconductor stack bonded to the first region of the first surface of the light-transmissive support, and including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer between the first and second conductivity-type semiconductor layers;
a light blocking film on the second region of the light-transmissive support and surrounding the semiconductor stack; and
a first electrode and a second electrode respectively on a portion of the first conductivity-type semiconductor layer and a portion of the second conductivity-type semiconductor layer.
9. The semiconductor light emitting device of claim 8 , wherein the bonding material of the light-transmissive support comprises spin-on glass.
10. The semiconductor light emitting device of claim 8 , further comprising an insulating layer covering the semiconductor stack and extending on the second region of the light-transmissive support, and having an opening on the second region of the light-transmissive support surrounding the semiconductor stack,
wherein the light blocking film extends from an opening of the insulating layer along a surface of the insulating layer.
11. The semiconductor light emitting device of claim 10 , wherein the light blocking film is in contact with the light-transmissive support through the opening.
12. The semiconductor light emitting device of claim 8 , wherein the first electrode and the second electrode include a plurality of electrode layers, and the light blocking film includes a same material as a material of at least one of the plurality of electrode layers.
13. A semiconductor light emitting device comprising:
a light-transmissive substrate including a wavelength conversion material;
a semiconductor stack on the light-transmissive substrate and including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer between the first and second conductivity-type semiconductor layers;
a light-transmitting bonding layer configured to bond the light-transmissive substrate with the semiconductor stack;
a light blocking film on the light-transmissive substrate and encompassing the semiconductor stacks;
a first electrode and a second electrode respectively on a portion of the first conductivity-type semiconductor layer and a portion of the second conductivity-type semiconductor layer; and
an insulating layer covering the semiconductor stack to have first and second openings defining the portions of the first and second conductivity-type semiconductor layers, respectively, and extending above the light-transmissive substrate;
wherein:
the insulating layer has a third opening on the light-transmissive substrate and surrounding the semiconductor stack;
the light blocking film extends from the third opening of the insulating layer along a surface of the insulating layer; and
the light blocking film includes a same material as a material of a portion of the first and second electrodes.
14. The semiconductor light emitting device of claim 13 , wherein the light-transmissive substrate has a first surface including a first region and a second region surrounding the first region, and a second surface opposing the first surface.
15. The semiconductor light emitting device of claim 13 , wherein the wavelength conversion material comprises phosphor.