SRAM with first and second precharge circuits
View Patent ↗A semiconductor storage device includes an SRAM memory cell composed of a drive transistor, a transfer transistor and a load transistor, an I/O circuit that is connected to bit lines connected to the memory cell, and an operating mode control circuit that switches an operating mode of the I/O circuit between a resume standby mode and a normal operation mode, wherein the I/O circuit includes a write driver that writes data to bit lines, a sense amplifier that reads data from the bit lines, a first switch inserted between the bit lines and the write driver, a second switch inserted between the bit lines and the sense amplifier, a precharge circuit that precharges the bit lines, and a control circuit that controls the first and second switches and the precharge circuit according to a signal from the operating mode control circuit.
1. A static random access memory circuit in a semiconductor device comprising:
a power supply line;
a plurality of word lines;
a plurality of bit line pairs;
a plurality of memory cells coupled to the word lines and the bit line pairs such that one memory cell is coupled to one of the word lines and one pair of the bit lines;
a plurality of I/O circuits connected to the plurality of the bit line pairs, respectively, each of the I/O circuits including a first precharge circuit and a second precharge circuit; and
a delay circuit that receives a first control signal and outputs a second control signal,
wherein the first precharge circuit connects the power supply line and one pair of the bit lines according to the first control signal,
wherein the second precharge circuit connects the power supply line and the connected pair of bit lines according to the second control signal, and
wherein the first precharge circuit includes:
a first PMOS transistor having a source-drain path coupled between the power supply line and one of the connected pair of bit lines; and
a second PMOS transistor having a source-drain path coupled between the power supply line and the other of the connected pair of bit lines; and
wherein the second precharge circuit includes:
a third PMOS transistor having a source-drain path coupled between the power supply line and one of the connected pair of bit lines; and
a fourth PMOS transistor having a source-drain path coupled between the power supply line and the other of the connected pair of bit lines.
2. A static random access memory circuit according to claim 1 ,
wherein the delay circuit includes a plurality of buffers, and
wherein each of the plurality of buffers is arranged proximal to a respective one of the plurality of I/O circuits.
3. A static random access memory circuit according to claim 1 , wherein each memory cells includes:
a flip-flop having:
a first storage node,
a second storage node,
a first CMOS inverter having an output coupled to the first storage node and an input coupled to the second storage node, and
a second CMOS inverter having an output coupled to the second storage node and an input coupled to the first storage node,
the first CMOS inverter including a first load PMOS transistor and a first drive NMOS transistor,
the second CMOS inverter including a second load PMOS transistor and a second drive NMOS transistor, and
first and second transfer NMOS transistors having source-drain paths coupled between the first and second storage nodes and the bit lines, respectively, and gate electrodes coupled to one of the word lines.
4. A static random access memory circuit according to claim 3 , wherein the plurality of I/O circuits includes:
a write driver connected to the connected pair of bit lines, and
a sense amplifier connected to the connected pair of bit lines.
5. A static random access memory circuit according to claim 4 ,
wherein the write driver is connected to the connected pair of bit lines via a first switch, and
wherein the sense amplifier is connected to the connected pair of bit lines via a second switch.
6. A static random access memory circuit according to claim 4 ,
wherein the second precharge circuit has a driving force that is smaller than that of the first precharge circuit.