Piezoelectric micromachined ultrasonic transducers with low stress sensitivity and methods of fabrication
A piezoelectric micromachined ultrasonic transducer (pMUT) device may include a piezoelectric membrane transducer designed to have lower sensitivity to residual stress and reduced sensitivity to geometric variations arising from the backside etching process used to release the membrane. These designs allow some of its key feature to be adjusted to achieve desired characteristics, such as pressure sensitivity, natural frequency, stress sensitivity, and bandwidth.
1. A micromachined ultrasonic device, comprising:
a substrate having an opening formed therethrough;
a membrane layer attached to the substrate over the opening, a portion of the membrane layer that overlies the opening defining a vibrating region of the membrane layer wherein the membrane layer includes an undercut on a side opposite a side on which the actuating structure is formed, wherein a width of the undercut is larger than a width of the opening;
an actuating structure attached to the membrane layer, the actuating structure including a piezoelectric layer sandwiched between first and second electrodes, wherein the piezoelectric layer does not cover selected portions of the membrane layer; and
two or more slots formed in the membrane layer, wherein the two or more slots extend through the membrane layer to intersect the undercut in the membrane layer and are configured to allow the membrane layer to expand or contract to release a residual stress in the membrane layer.
2. The device of claim 1 , wherein the membrane layer is attached to the substrate at specific anchor points.
3. The device of claim 1 , wherein the locations of the specific anchor points determine mechanical behavior of the membrane layer.
4. The device of claim 1 , wherein the locations of the specific anchor points determine a resonant frequency of the membrane.
5. The device of claim 1 , wherein the two or more slots provide pressure equalization between the front and back sides of the membrane.
6. The device of claim 1 , wherein the actuating structure including a piezoelectric layer sandwiched between first and second electrodes is patterned to reduce the membrane mass without considerably reducing the membrane stiffness.
7. The device of claim 1 , wherein the actuating structure including a piezoelectric layer sandwiched between first and second electrodes is patterned into a ring-shaped structure.
8. The device of claim 1 , wherein the membrane layer is polysilicon.
9. The device of claim 8 , wherein the polysilicon layer has an average tensile residual stress.
10. The device of claim 8 , wherein the membrane layer is composed of doped polysilicon and functions as the first electrode layer, such that the actuating structure includes a piezoelectric layer sandwiched between the polysilicon membrane and a second electrode layer.
11. The device of claim 1 , wherein the piezoelectric layer is aluminum nitride or PZT.
12. The device of claim 1 , wherein the membrane layer includes a layer of silicon nitride sandwiched between a first layer of polysilicon and a second layer of polysilicon.
13. The device of claim 12 , wherein the two or more slots extend through the first polysilicon layer to the silicon nitride layer.
14. A method for making a micromachined ultrasonic device, comprising:
forming a membrane layer on a front side of a substrate;
forming an actuating structure on the membrane layer, the actuating structure including a piezoelectric layer sandwiched between first and second electrodes, wherein the piezoelectric layer does not cover selected portions of the membrane layer;
forming an opening in the substrate to a back side of the membrane layer, whereby a portion of the membrane layer that overlies the opening defining a vibrating region of the membrane layer and characterized in:
forming two or more slots in the membrane layer wherein the two or more slots extend through the membrane layer to intersect an undercut in the membrane layer; and are configured to allow the membrane layer to expand or contract to release a residual stress in the membrane layer; and
forming an undercut in the membrane layer on a backside of the membrane layer opposite the front side, wherein a width of the undercut is larger than a width of the opening.
15. The method of claim 14 , wherein forming the membrane layer on the front side of the substrate includes attaching the membrane layer to the substrate at specific anchor points.
16. The method of claim 15 , wherein attaching the membrane layer to the substrate at the specific anchor points includes defining the specific anchor points by patterning a sacrificial oxide layer that is located between the membrane and the substrate.
17. The method of claim 15 , wherein the locations of the specific anchor points determine mechanical behavior of the membrane layer.
18. The method of claim 15 , wherein the locations of the specific anchor points determine a resonant frequency of the membrane.
19. The method of claim 14 , wherein the actuating structure including a piezoelectric layer sandwiched between first and second electrodes is patterned to reduce the membrane mass without considerably reducing the membrane stiffness.
20. The method of claim 19 , wherein the actuating structure including a piezoelectric layer sandwiched between first and second electrodes is patterned into a ring-shaped structure.
21. The method of claim 14 , wherein the membrane layer is polysilicon.
22. The method of claim 21 , wherein the polysilicon layer has an average tensile residual stress.
23. The method of claim 14 , wherein the piezoelectric layer is aluminum nitride or PZT.
24. The method of claim 21 , forming the first electrode includes doping the polysilicon layer of the membrane, such that the actuating structure includes a piezoelectric layer sandwiched between the polysilicon membrane and a second electrode layer.
25. The method of claim 14 , wherein the membrane layer is formed by:
depositing a first layer of polysilicon;
depositing a layer of silicon nitride; and
depositing a second layer of polysilicon.
26. The method of claim 25 , wherein the two or more slots extend through the first polysilicon layer to the silicon nitride material.