Temperature-engineered MEMS resonator
Degenerately doped semiconductor materials are deployed within resonant structures to control the first and higher order temperature coefficients of frequency, thereby enabling temperature dependence to be engineered without need for cumulative material layers which tend to drive up cost and compromise resonator performance.
1. A microelectromechanical system (MEMS) die comprising:
a field area;
a resonant structure having a layer of degenerately-doped polycrystalline silicon, a layer of degenerately-doped single-crystal silicon and a layer of piezoelectric material sandwiched between the degenerately-doped polycrystalline silicon layer and the degenerately-doped single-crystal silicon layer; and
a tethering structure to physically secure the resonant structure to the field area, the tethering structure having (i) a layer of degenerately-doped polycrystalline silicon coupled to the degenerately-doped polycrystalline silicon layer of the resonant structure and (ii) a layer of degenerately-doped single-crystal silicon coupled to the degenerately-doped single-crystal silicon layer of the resonant structure.
2. The MEMS die of claim 1 wherein the tethering structure is trenched to form a flexible member that permits mechanical motion of the resonant structure.
3. The MEMS die of claim 1 wherein the field area comprises an anchoring region physically secured to the tethering structure, the anchoring region having (i) a layer of degenerately-doped polycrystalline silicon coupled to the degenerately-doped polycrystalline silicon layer of the tethering structure and (ii) a layer of degenerately-doped single-crystal silicon coupled to the degenerately-doped single-crystal silicon layer of the tethering structure.
4. The MEMS die of claim 3 further comprising a first electrical contact and a second electrical contact exposed at an outer surface of the MEMS die and electrically coupled, respectively, to the degenerately-doped polycrystalline silicon layer of the anchoring region and the degenerately-doped single-crystal silicon layer of the anchoring region.
5. The MEMS die of claim 4 wherein (i) the degenerately-doped polycrystalline silicon layer of the anchoring region is electrically isolated from the degenerately-doped single-crystal silicon layer of the anchoring region, and (ii) the degenerately-doped polycrystalline silicon layer of the tethering structure is electrically isolated from the degenerately-doped single-crystal silicon layer of the tethering structure.
6. The MEMS die of claim 5 wherein the degenerately-doped polycrystalline silicon layers of the anchoring region, tethering structure and resonant structure are electrically conductive, and the degenerately-doped single-crystal silicon layers of the anchoring region, tethering structure and resonant structure are also electrically conductive so that application of a nonzero voltage across the first and second electrical contacts will effect a nonzero actuating voltage across the piezoelectric material layer of the resonant structure.
7. The MEMS die of claim 4 wherein the degenerately-doped polycrystalline silicon layers of the anchoring region, tethering structure and resonant structure are electrically conductive, and the degenerately-doped single-crystal silicon layers of the anchoring region, tethering structure and resonant structure are also electrically conductive so that application of a time-varying actuation voltage across the first and second electrical contacts will effect piezoelectric expansion and contraction of the piezoelectric material layer sufficient to excite resonant motion of the resonant structure.
8. The MEMS die of claim 1 wherein the piezoelectric material layer of the resonant structure comprises an aluminum nitride piezoelectric layer.
9. The MEMS die of claim 1 wherein an axis along which the resonant structure exhibits a predominant resonant motion is offset from a dominant crystallographic axis of the single-crystal silicon layer by a nonzero angle less than 90 degrees.
10. The MEMS die of claim 1 wherein an impurity dopant concentration within at least one of the degenerately-doped single-crystal silicon layer of the resonant structure or the degenerately-doped polycrystalline silicon layer of the resonant structure is greater than 4E18 atoms per cubic centimeter.
11. A method of fabricating a microelectromechanical system (MEMS) die comprising:
a field area;
forming a resonant structure having a layer of degenerately-doped polycrystalline silicon, a layer of degenerately-doped single-crystal silicon and a layer of piezoelectric material sandwiched between the degenerately-doped polycrystalline silicon layer and the degenerately-doped single-crystal silicon layer; and
forming a tethering structure to physically secure the resonant structure to a field area of the MEMS die, including forming a tethering structure having (i) a layer of degenerately-doped polycrystalline silicon coupled to the degenerately-doped polycrystalline silicon layer of the resonant structure and (ii) a layer of degenerately-doped single-crystal silicon coupled to the degenerately-doped single-crystal silicon layer of the resonant structure.
12. The method of claim 11 wherein forming the tethering structure comprises forming trenches in the field area to define, as the tethering structure, a flexible member that permits mechanical motion of the resonant structure.
13. The method of claim 11 further comprising forming an anchoring region within the field area that is physically secured to the tethering structure, including forming, as constituents of the anchoring region, (i) a layer of degenerately-doped polycrystalline silicon coupled to the degenerately-doped polycrystalline silicon layer of the tethering structure and (ii) a layer of degenerately-doped single-crystal silicon coupled to the degenerately-doped single-crystal silicon layer of the tethering structure.
14. The method of claim 13 further comprising forming, at an outer surface of the MEMS die, a first electrical contact and a second electrical contact that are electrically coupled, respectively, to the degenerately-doped polycrystalline silicon layer of the anchoring region and the degenerately-doped single-crystal silicon layer of the anchoring region.
15. The method of claim 14 wherein forming the anchoring region comprises electrically isolating the degenerately-doped polycrystalline silicon layer of the anchoring region from the degenerately-doped single-crystal silicon layer of the anchoring region, and wherein forming the tethering structure comprises electrically isolating the degenerately-doped polycrystalline silicon layer of the tethering structure from the degenerately-doped single-crystal silicon layer of the tethering structure.
16. The method of claim 15 wherein forming the degenerately-doped polycrystalline silicon layers of the anchoring region, tethering structure and resonant structure comprises rendering those layers electrically conductive, and wherein forming the degenerately-doped single-crystal silicon layers of the anchoring region, tethering structure and resonant structure comprises rendering those layers electrically conductive so that application of a nonzero voltage across the first and second electrical contacts will effect a nonzero actuating voltage across the piezoelectric material layer of the resonant structure.
17. The method of claim 14 wherein forming the degenerately-doped polycrystalline silicon layers of the anchoring region, tethering structure and resonant structure comprises rendering those layers electrically conductive, and forming the degenerately-doped single-crystal silicon layers of the anchoring region, tethering structure and resonant structure comprises rendering those layers electrically conductive so that application of a time-varying actuation voltage across the first and second electrical contacts will effect piezoelectric expansion and contraction of the piezoelectric material layer sufficient to excite resonant motion of the resonant structure.
18. The method of claim 11 wherein forming the piezoelectric material layer of the resonant structure comprises forming an aluminum nitride piezoelectric layer.
19. The method of claim 11 wherein forming the resonant structure comprises offsetting an axis along which the resonant structure exhibits a predominant resonant motion from a dominant crystallographic axis of the single-crystal silicon layer by a nonzero angle less than 90 degrees.
20. The method of claim 11 wherein forming the resonant structure comprises doping at least one of the degenerately-doped single-crystal silicon layer of the resonant structure or the degenerately-doped polycrystalline silicon layer of the resonant structure with an impurity dopant concentration greater than 4E18 atoms per cubic centimeter.
21. A microelectromechanical system (MEMS) die comprising:
a field area;
a resonant structure having a layer of degenerately-doped polycrystalline silicon, a layer of degenerately-doped single-crystal silicon and a layer of piezoelectric material sandwiched between the degenerately-doped polycrystalline silicon layer and the degenerately-doped single-crystal silicon layer; and
means for physically securing the resonant structure to the field area.