Magnetoresistive device and method of manufacturing same
A magnetoresistive-based device and method of manufacturing a magnetoresistive-based device using one or more hard masks. The process of manufacture, in one embodiment, includes patterning a mask over a selected portion of the third layer of ferromagnetic material, wherein the mask is a metal hard mask. Thereafter, etching through the third layer of ferromagnetic material to provide sidewalls of the second synthetic antiferromagnetic structure, through the second tunnel barrier layer to form a second tunnel barrier and provide sidewalls thereof and the second layer of ferromagnetic material to provide sidewalls thereof. Thereafter, etching, through the first tunnel barrier layer to form a first tunnel barrier to provide sidewalls thereof and etching the first layer of ferromagnetic material to provide sidewalls thereof. The process may then include oxidizing the sidewalls of (i) the first tunnel barrier and (ii) the first layer of ferromagnetic material. Thereafter, the metal hard mask may be connected to an electrical conductor.
1. A method of manufacturing a magnetoresistive device from: (i) a first layer of ferromagnetic material disposed over a first electrically conductive material, wherein the first layer of ferromagnetic material includes a first synthetic antiferromagnetic structure, (ii) a first tunnel barrier layer disposed over the first layer of ferromagnetic material, (iii) a second layer of ferromagnetic material disposed over the first tunnel barrier layer, (iv) a second tunnel barrier layer disposed over the second layer of ferromagnetic material, (v) a third layer of ferromagnetic material disposed over the second tunnel barrier layer, wherein the third layer of ferromagnetic material includes a second synthetic antiferromagnetic structure, and (vi) a first layer of electrically conductive material disposed over the third layer of ferromagnetic material, method comprising:
patterning a mask over a selected portion of the first layer of electrically conductive material;
after patterning the mask, etching (a) through the first layer of electrically conductive material to form an electrically conductive electrode, and (b) through the third layer of ferromagnetic material to provide sidewalls of the second synthetic antiferromagnetic structure;
providing a first insulating material on the sidewalls of the third layer of ferromagnetic material;
etching (a) through the second tunnel barrier layer to form a second tunnel barrier and provide sidewalls thereof and (b) the second layer of ferromagnetic material to provide sidewalls thereof;
after etching through the second tunnel barrier and etching the second layer of ferromagnetic material, etching (a) through the first tunnel barrier layer to form a first tunnel barrier to provide sidewalls thereof and (b) the first layer of ferromagnetic material to provide sidewalls thereof;
providing a second insulating material on the sidewalls of (i) the first tunnel barrier and (ii) the first layer of ferromagnetic material; and
after providing the second insulating material, etching the first electrically conductive material to form a bottom electrode.
2. The method of claim 1 wherein the mask is a metal hard mask.
3. The method of claim 2 wherein the metal hard mask is PtMn or IrMn and includes a thickness of 50-300 Angstroms.
4. The method of claim 1 further including, after etching the first electrically conductive material to form a bottom electrode, connecting the mask to an electrical conductor.
5. The method of claim 1 further including removing the mask to expose the electrically conductive electrode.
6. The method of claim 5 further including connecting the electrically conductive electrode to an electrical conductor.
7. The method of claim 5 wherein removing the mask comprises:
removing the mask after etching (a) through the first tunnel barrier layer to form a first tunnel barrier to provide sidewalls thereof and (b) the first layer of ferromagnetic material to provide sidewalls thereof.
8. The method of claim 1 wherein the mask includes one or more metals comprising at least one of the elements selected from the group consisting of Pt, Ir, Mo, W, Ru and alloy AB, where A comprises Pt, Ir, Mo, W, Ru and B comprises Fe, Ni, Mn.
9. The method of claim 1 wherein the mask includes PtMn or IrMn.
10. A method of manufacturing a magnetoresistive device from: (i) a first layer of ferromagnetic material disposed over a first electrically conductive material, wherein the first layer of ferromagnetic material includes a first synthetic antiferromagnetic structure, (ii) a first tunnel barrier layer disposed over the first layer of ferromagnetic material, (iii) a second layer of ferromagnetic material disposed over the first tunnel barrier layer, (iv) a second tunnel barrier layer disposed over the second layer of ferromagnetic material, and (v) a third layer of ferromagnetic material disposed over the second tunnel barrier layer, wherein the third layer of ferromagnetic material includes a second synthetic antiferromagnetic structure, method comprising:
patterning a metal hard mask from a metal layer disposed over a selected portion of the third layer of ferromagnetic material;
after patterning the metal hard mask, etching through the third layer of ferromagnetic material to provide sidewalls of the second synthetic antiferromagnetic structure;
etching (a) through the second tunnel barrier layer to form a second tunnel barrier and provide sidewalls thereof and (b) the second layer of ferromagnetic material to provide sidewalls thereof;
after etching through the second tunnel barrier and etching the second layer of ferromagnetic material, etching (a) through the first tunnel barrier layer to form a first tunnel barrier to provide sidewalls thereof and (b) the first layer of ferromagnetic material to provide sidewalls thereof; and
providing a first insulating material on the sidewalls of (i) the first tunnel barrier and (ii) the first layer of ferromagnetic material; and
connecting the metal hard mask to an electrical conductor.
11. The method of claim 10 further including, after etching the first electrically conductive material to form the bottom electrode.
12. The method of claim 10 wherein the metal layer includes one or more metals comprising at least one of the elements selected from the group consisting of Pt, Ir, Mo, W, Ru and alloy AB, where A comprises Pt, Ir, Mo, W, Ru and B comprises Fe, Ni, Mn.
13. The method of claim 10 wherein the metal layer includes PtMn or IrMn.
14. The method of claim 13 wherein the metal layer includes a thickness of 50-300 Angstroms.
15. The method of claim 13 wherein the metal layer includes a thickness of 75-250 Angstroms.
16. A method of manufacturing a magnetoresistive device from: (i) a first layer of ferromagnetic material disposed over a first electrically conductive material, wherein the first layer of ferromagnetic material includes a first synthetic antiferromagnetic structure, (ii) a first tunnel barrier layer disposed over the first layer of ferromagnetic material, (iii) a second layer of ferromagnetic material disposed over the first tunnel barrier layer, (iv) a second tunnel barrier layer disposed over the second layer of ferromagnetic material, and (v) a third layer of ferromagnetic material disposed over the second tunnel barrier layer, wherein the third layer of ferromagnetic material includes a second synthetic antiferromagnetic structure, method comprising:
patterning a mask over a selected portion of the third layer of ferromagnetic material, wherein the mask is a metal hard mask;
after patterning the mask, etching (a) through the third layer of ferromagnetic material to provide sidewalls of the second synthetic antiferromagnetic structure, (b) through the second tunnel barrier layer to form a second tunnel barrier and provide sidewalls thereof and (c) the second layer of ferromagnetic material to provide sidewalls thereof;
after etching through the third layer of ferromagnetic material, etching through the second tunnel barrier, and etching the second layer of ferromagnetic material, etching, (a) through the first tunnel barrier layer to form a first tunnel barrier to provide sidewalls thereof and (b) the first layer of ferromagnetic material to provide sidewalls thereof;
oxidizing the sidewalls of (i) the first tunnel barrier and (ii) the first layer of ferromagnetic material; and
connecting the metal hard mask to an electrical conductor.
17. The method of claim 16 wherein the metal hard mask includes one or more metals comprising at least one of the elements selected from the group consisting of Pt, Ir, Mo, W, Ru and alloy AB, where A comprises Pt, Ir, Mo, W, Ru and B comprises Fe, Ni, Mn.
18. The method of claim 16 wherein the metal hard mask is PtMn or IrMn.
19. The method of claim 18 wherein the metal hard mask includes a thickness of 50-300 Angstroms.
20. The method of claim 18 wherein the metal hard mask includes a thickness of 75-250 Angstroms.
21. The method of claim 16 wherein (a) after etching the third layer of ferromagnetic material, the second tunnel barrier layer and the second layer of ferromagnetic material, and (b) before etching the first tunnel barrier layer and the first layer of ferromagnetic material, the method further includes:
providing a first insulating material on the sidewalls of the (i) second synthetic antiferromagnetic structure, (ii) the second tunnel barrier and (iii) the second layer of ferromagnetic material.