Display device
View Patent ↗According to one embodiment, a display device includes a pixel, a scanning line, a signal line, a pixel electrode, a first switching element, and a capacitance line producing capacitance together with the pixel electrode. The first switching element includes a first semiconductor layer connected to the signal line and the pixel electrode, and a first gate electrode opposed to the first semiconductor layer and connected to the scanning line. The capacitance line includes a first portion opposed to the scanning line and extending in an extension direction of the scanning line, a second portion connected to the first portion and opposed to the pixel electrode.
1. A display device comprising:
a pixel arranged in a display area;
a scanning line extending in the display area;
a signal line extending in the display area and crossing the scanning line;
a pixel electrode arranged in the pixel;
a first switching element arranged in the display area, and including a first semiconductor layer connected to the signal line and the pixel electrode, and a first gate electrode opposed to the first semiconductor layer and connected to the scanning line; and
a capacitance line producing capacitance together with the pixel electrode, wherein
the capacitance line includes:
a first portion opposed to the scanning line and extending in an extension direction of the scanning line;
a second portion connected to the first portion and opposed to the pixel electrode; and
a relay electrode connecting the first semiconductor layer and the pixel electrode to each other, wherein
the scanning line and the first gate electrode are formed in a first layer,
the capacitance line is formed in a second layer,
the relay electrode is formed in a third layer, and
the first layer is located between the second layer and the third layer.
2. The display device of claim 1 , wherein a thickness of the relay electrode is greater than a thickness of the signal line.
3. The display device of claim 1 , wherein the second portion of the capacitance line is opposed to the relay electrode.
4. The display device of claim 1 , further comprising a second switching element arranged in a surrounding area around the display area, wherein
the second switching element includes a second semiconductor layer, and a second gate electrode opposed to the second semiconductor layer, and
the second gate electrode is formed in the second layer.
5. The display device of claim 1 , further comprising a shield overlapping an area where the first semiconductor layer and the first gate electrode are opposed to each other, wherein
the shield is formed in the second layer.
6. A display device comprising:
a pixel arranged in a display area;
a scanning line extending in the display area;
a signal line extending in the display area and crossing the scanning line;
a pixel electrode arranged in the pixel;
a first switching element arranged in the display area, and including a first semiconductor layer connected to the signal line and the pixel electrode, and a first gate electrode opposed to the first semiconductor layer and connected to the scanning line; and
a capacitance line producing capacitance together with the pixel electrode, wherein
the capacitance line includes:
a first portion opposed to the scanning line and extending in an extension direction of the scanning line;
a second portion connected to the first portion and opposed to the pixel electrode; and
a relay electrode connecting the first semiconductor layer and the pixel electrode to each other, wherein
the scanning line is formed in a first layer,
the capacitance line is formed in a second layer,
the first gate electrode is formed in a third layer between the first layer and the second layer, and
the relay electrode is formed in the first layer.
7. The display device of Claim 6 , wherein the second portion of the capacitance line is opposed to the relay electrode.
8. The display device of claim 6 , further comprising a second switching element arranged in a surrounding area around the display area, wherein
the second switching element includes a second semiconductor layer, and a second gate electrode opposed to the second semiconductor layer, and
the second gate electrode is formed in the second layer.
9. The display device of claim 6 , further comprising a shield overlapping an area where the first semiconductor layer and the first gate electrode are opposed to each other, wherein
the shield is formed in the second layer.
10. The display device of claim 6 , wherein a thickness of the scanning line is greater than a thickness of the first gate electrode.