Memory system and operating method thereof

1. A memory system comprising:

a memory device; and

a controller configured to:

perform a read operation and an erase operation to the memory device;

predict a first required time when a read command is received during the performing of the erase operation, the first required time being based on a sum including a first time required for the read operation in response to the read command and a second time required for the on-going erase operation; and

determine whether to halt or continue the erase operation according to the first required time.

2. The memory system of claim 1 , wherein the first required time further includes a time required to halt the on-going erase operation and reopen the halted erase operation.

3. The memory system of claim 1 ,

wherein the erase operation includes a first erase operation of selecting a target memory block from memory blocks, and a second erase operation of erasing data stored in the selected target memory block, and

wherein, when the first required time is smaller than a threshold time and the read command is provided during the first erase operation, the controller halts the on-going erase operation, performs the read operation, and reopens the halted erase operation after the read operation is completed.

4. The memory system of claim 3 , wherein, when the first required time is equal to or greater than the threshold time, the controller performs the read operation after completion the on-going erase operation.

5. The memory system of claim 1 ,

wherein the erase operation includes a first erase operation of selecting a target memory block from memory blocks, and a second erase operation of erasing data stored in the selected target memory block, and

wherein, when the first required time is smaller than a threshold time and the read command is provided during the second erase operation, the controller further predicts a second required time, which is a sum of a first time required for the read operation in response to the read command, a second time required for the on-going erase operation and a time loss to occur when the second erase operation stops and starts from a beginning, and sequentially performs one and the other between the read operation and the second erase operation according to the second required time.

6. The memory system of claim 5 , wherein the first time includes a time required to halt the on-going second erase operation and start the halted second erase operation.

7. The memory system of claim 5 , wherein, when the second required time is smaller than a threshold time, the controller halts the on-going second erase operation, performs the read operation, and starts the second erase operation from the beginning after the read operation is completed.

8. The memory system of claim 5 , wherein, when the second required time is equal to or greater than the threshold time, the controller performs the read operation after completion the on-going second erase operation.

9. An operating method of a memory system including a memory device, the operating method comprising:

performing an erase operation to the memory device;

predicting a first required time, which is a sum of a first time required for a read operation in response to a read command and a second time required for the on-going erase operation when the read command is provided during the erase operation; and

sequentially performing one and the other one between the read operation and the on-going erase operation according to the first required time.

10. The operating method of claim 9 , wherein the first time includes a time required to halt the on-going erase operation and reopen the halted erase operation.

11. The operating method of claim 9 ,

wherein the erase operation includes a first erase operation of selecting a target memory block from memory blocks, and a second erase operation of erasing data stored in the selected target memory block, and

wherein, when the first required time is smaller than a threshold time and the read command is provided during the first erase operation, the sequentially performing includes:

halting the on-going erase operation;

performing the read operation; and

reopening the halted erase operation after the read operation is completed.

12. The operating method of claim 11 , wherein, when the first required time is equal to or greater than the threshold time, the sequentially performing includes performing the read operation after completion the on-going erase operation.

13. The operating method of claim 9 ,

wherein the erase operation includes a first erase operation of selecting a target memory block from memory blocks, and a second erase operation of erasing data stored in the selected target memory block, and

wherein, when the first required time is smaller than a threshold time and the read command is provided during the second erase operation, the sequentially performing includes:

predicting a second required time, which is a sum of a first time required for the read operation in response to the read command, a second time required for the on-going erase operation and a time loss to occur when the second erase operation stops and starts from a beginning; and

sequentially performing one and the other between the read operation and the second erase operation according to the second required time.

14. The operating method of claim 13 , wherein the first time includes a time required to halt the on-going second erase operation and start the halted second erase operation.

15. The operating method of claim 14 , wherein, when the second required time is smaller than a threshold time, the sequentially performing includes:

halting the on-going second erase operation;

performing the read operation; and

starting the second erase operation from the beginning after the read operation is completed.

16. The operating method of claim 13 , wherein, when the second required time is equal to or greater than the threshold time, the sequentially performing includes performing the read operation after completion the on-going second erase operation.