Semiconductor light emitting device
A semiconductor light emitting device includes first and second light emitting bodies, a first electrode, a second electrode and a first interconnection. The first and second light emitting bodies are disposed on a conductive substrate, and each includes first and second semiconductor layers and a light emitting layer therebetween. The first electrode is provided between the first light emitting body and the conductive substrate, and electrically connected to a first semiconductor layer and the conductive substrate. The second electrode is provided between the second light emitting body and the conductive substrate, and electrically connected to a first semiconductor layer. The first interconnection electrically connects the second semiconductor layer of the first light emitting body and the second electrode. The first interconnection includes a first portion extending over the first and second light emitting bodies and a second portion extending into the second light emitting body.
1. A semiconductor light emitting device, the device comprising:
an electrically conductive base;
an insulating film provided on the electrically conductive base;
a plurality of light emitting bodies arranged on the insulating film, the plurality of light emitting bodies each having a first electrode provided between the insulating film and each remaining portion of the plurality of light emitting bodies; and
a plurality of interconnections electrically connecting the plurality of light emitting bodies in series,
the plurality of light emitting bodies including a first light emitting body and a second light emitting body connected in series by one of the plurality of interconnections, wherein
a first electrode of the first light emitting body is connected to the electrically conductive base through a contact hole provided in the insulating film, and
the one of the plurality of interconnections includes a first portion and a second portion, the first portion extending through the second light emitting body and being connected to a first electrode of the second light emitting body, and the second portion extending over the first light emitting body.
2. The device according to claim 1 , wherein
the electrically conductive base includes an electrically conductive substrate.
3. The device according to claim 1 , wherein
each first electrode of the plurality of light emitting bodies includes a first layer contacting each remaining portion of the plurality of light emitting bodies, and a second layer covering the first layer.
4. The device according to claim 3 , wherein
the first layer is provided between the second layer and the each remaining portion of the plurality of light emitting bodies, and
the second layer is provided between the first layer and the insulating film.
5. The device according to claim 1 , wherein
the first electrode of the second light emitting body includes an extending portion extending along the insulating film, and the first portion of the one of the plurality of interconnections is connected to the extending portion.
6. The device according to claim 3 , wherein the first layer includes silver (Ag).
7. The device according to claim 3 wherein the second layer includes aluminum (Al).
8. The device according to claim 1 , further comprising:
an electrically conductive body provided in the contact hole, and the first electrode of the first light emitting body is connected via the electrically conductive body to the electrically conductive base.
9. The device according to claim 8 , wherein the electrically conductive body includes aluminum (Al) or titanium nitride (TiN).
10. The device according to claim 1 , wherein each first electrode of the plurality of emitting bodies includes a light reflecting material.
11. The device according to claim 1 , wherein
the plurality of light emitting bodies each includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer, and
each first electrode of the plurality of light emitting bodies is in contact with the first semiconductor layer.
12. The device according to claim 11 , wherein
the one of the plurality of interconnections is connected to a second semiconductor layer of the first light emitting body.
13. The device according to claim 11 , wherein
a top surface of the second semiconductor layer has a roughened surface.
14. The device according to claim 1 , wherein the plurality of light emitting bodies each includes group III-V compound semiconductor expressed by a composition formula of B x In y Al z Ga 1-x-y-z N (0≤x≤1, 0≤y≤1, 0≤z≤1, 0≤x+y+z≤1).