Cantilevers with one- or two-dimensional actuation for on-chip active waveguide coupling alignment
Photonic integrated circuits including controllable cantilevers are described. Such photonic integrated circuits may be used in connection with other optical devices, in which light is transferred between the photonic integrated circuit and one of these optical device. The photonic integrated circuit may comprise an optical waveguide having an end disposed proximate to a facet of the cantilever. The orientation of the cantilever may be actively controlled in one or two dimensions, thus adjusting the orientation of the optical waveguide. Actuation of the cantilever may be performed, for example, thermally and/or electrostatically. Orientation of the cantilever may be performed in such a way to align the optical waveguide with an optical device.
1. A photonic integrated circuit comprising:
a substrate;
a cantilever having a proximal end connected to the substrate and a free end separated from the substrate by a recess; and
a first optical waveguide disposed, at least partially, within the cantilever;
wherein the cantilever comprises a cantilever biasing element configured to spatially bias the free end of the cantilever, wherein the free end of the cantilever is secured to an optical device with a material distinct from the cantilever and disposed between the first optical waveguide and a second optical waveguide of the optical device.
2. The photonic integrated circuit of claim 1 , wherein the free end of the cantilever is separated from the proximal end by a distance that is between 50 μm and 1 mm.
3. The photonic integrated circuit of claim 1 , wherein the cantilever lacks support at least in a region that is within 50 μm from the free end.
4. The photonic integrated circuit of claim 1 , wherein the cantilever biasing element is configured to spatially bias the free end of the cantilever in a direction that is out of a plane parallel to a top surface of the substrate.
5. The photonic integrated circuit of claim 1 , wherein the cantilever comprises a first layer having a first coefficient of thermal expansion and a second layer having a second coefficient of thermal expansion, and the cantilever biasing element comprises a conductive layer.
6. The photonic integrated circuit of claim 5 , wherein the conductive layer is disposed in the first layer.
7. The photonic integrated circuit of claim 5 , wherein the first layer comprises silicon dioxide.
8. The photonic integrated circuit of claim 7 , wherein the first layer is disposed between the first optical waveguide and the second layer.
9. The photonic integrated circuit of claim 5 , wherein the second layer comprises aluminum.
10. The photonic integrated circuit of claim 1 , wherein the material comprises epoxy.
11. The photonic integrated circuit of claim 1 , wherein the first optical waveguide has an end that is within 30 μm from the free end of the cantilever.
12. The photonic integrated circuit of claim 1 , wherein the cantilever biasing element is configured to spatially bias the free end of the cantilever in a plane parallel to a top surface of the substrate.
13. The photonic integrated circuit of claim 1 , further comprising a first fixed portion connected to the substrate and adjacent the cantilever, the cantilever comprising a first biasing electrode and the first fixed portion comprising a second biasing electrode.
14. The photonic integrated circuit of claim 13 , wherein the cantilever and the first fixed portion are separated from one another in a direction parallel to a top surface of the substrate.
15. The photonic integrated circuit of claim 13 , further comprising a second fixed portion comprising a third biasing electrode, the first and second fixed portions being disposed on opposite sides of the cantilever.
16. The photonic integrated circuit of claim 1 , wherein the material comprises a gluing material.
17. The photonic integrated circuit of claim 1 , wherein the first optical waveguide of the photonic integrated circuit is optically coupled to the second optical waveguide of the optical device.
18. The photonic integrated circuit of claim 1 , wherein the material secures the free end of the cantilever to a facet of the optical device.
19. The photonic integrated circuit of claim 1 , wherein the optical device is disposed outside the substrate.