IP Library Granted Patent US 10,283,559
Granted Patent B2
US 10,283,559 · App. 15/640,968 · Granted May 7, 2019

Pixel circuit

Inventors: Graeme Storm (Kirkliston, GB); Christophe Mandier (Grenoble, FR)
Assignees: STMicroelectronics (Grenoble 2) SAS; STMicroelectronics (Research & Development) Limited
H01L27/14812H01L27/14638H01L27/14643H04N5/355H04N5/3559H04N5/3597H04N5/37452H01L27/14609
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Quick Facts
Patent No.
US 10,283,559
App. No.
15/640,968
Granted
May 7, 2019
Kind
B2
Abstract

A pixel arrangement includes a photodiode, a reset transistor configured to be controlled by a reset signal and coupled to a reset input voltage, a transfer gate transistor configured to transfer charge from the photodiode to a node, wherein the transfer gate transistor is controlled by a transfer gate voltage, and a source follower transistor controlled by the voltage on the node and coupled to a source follower voltage. A capacitor is coupled between the node and an input voltage. During a read operation the input voltage is increased to boost the voltage at the node. The increased input voltage may, for example, be one the reset input voltage, said source follower voltage, said transfer gate voltage and a boosting voltage.

Claims (32)

1. A pixel arrangement, comprising:

a photodiode;

a transfer gate transistor configured to transfer charge from the photodiode to a sense node, said transfer gate transistor having a control terminal configured to be controlled by a transfer gate signal;

a reset transistor configured to reset the sense node in response to a reset signal; and

a source follower transistor controlled by a voltage on the sense node;

wherein the transfer gate signal, during a read operation, has a transfer gate voltage that transitions from a first voltage level for controlling the transfer gate transistor to be turned off to a second voltage level and stays at that second voltage level for a first time period causing a voltage of said sense node to increase without turning on said transfer gate transistor to transfer charge from the photodiode to the sense node, and then the transfer gate voltage further transitions, after the first time period, from the second voltage level to a third voltage level for controlling the transfer gate transistor to be turned on and stays at that third voltage level for a second time period causing the transfer gate transistor to transfer charge from the photodiode to the sense node; and

wherein the second voltage level is between the first and third voltage levels.

2. The pixel arrangement of claim 1 , wherein the source follower outputs the voltage at the sense node while the transfer gate voltage is at the second voltage level as a first sampled voltage and wherein the source follower outputs the voltage at the sense node after the transfer gate voltage is at the third voltage level as a second sampled voltage.

3. The pixel arrangement of claim 2 , further comprising a read transistor coupled between the source follower transistor and an output, wherein said read transistor is controlled to turn on to pass the first sampled voltage for output and to pass the second sampled voltage for output.

4. The pixel arrangement of claim 2 , wherein said transfer gate voltage further transitions, after the second time period, from the third voltage level to a fourth voltage level and stays at said fourth voltage level for a third time period during which the second sampled voltage is output, and then transitions, after the third time period, from the fourth voltage level to the first voltage level, and wherein the fourth voltage level is between the first and second voltage levels.

5. The pixel arrangement of claim 2 , wherein said reset signal is pulsed at a beginning of said read operation.

6. The pixel arrangement of claim 2 , wherein said reset signal is pulsed while the first and second sampled voltages are output.

7. The pixel arrangement of claim 1 , wherein the pixel arrangement is implemented as an integrated circuit.

8. The pixel arrangement of claim 1 , further comprising:

a further photodiode;

a further transfer gate transistor configured to transfer charge from the further photodiode to a sense node, said further transfer gate transistor having a control terminal configured to be controlled by a further transfer gate signal;

wherein each of said transfer gate signal and said further transfer gate signal have said transfer gate voltage.

9. A pixel arrangement, comprising:

a first photodiode;

a second photodiode;

a first transfer gate transistor configured to transfer charge from the first photodiode to a sense node, said first transfer gate transistor having a control terminal configured to be controlled by a first transfer gate signal;

a second transfer gate transistor configured to transfer charge from the second photodiode to a sense node, said second transfer gate transistor having a control terminal configured to be controlled by a second transfer gate signal;

a reset transistor configured to reset the sense node in response to a reset signal; and

a source follower transistor controlled by a voltage on the sense node;

wherein each of the first and second transfer gate signals, during a read operation, has a transfer gate voltage that transitions from a first voltage level for controlling the first or second transfer gate transistor to be turned off to a second voltage level and stays at that second voltage level for a first time period causing a voltage of said sense node to increase without turning on said first or second transfer gate transistor to transfer charge from the corresponding first or second photodiode to the sense node, and then the transfer gate voltage further transitions, after the first time period, from the second voltage level to a third voltage level for controlling the first or second transfer gate transistor to be turned on and stays at that third voltage level for a second time period causing the first or second transfer gate transistor to transfer charge from the corresponding first or second photodiode to the sense node; and

wherein the second voltage level is between the first and third voltage levels.

10. The pixel arrangement of claim 9 , wherein the source follower outputs the voltage at the sense node while the transfer gate voltage is at the second voltage level as a first sampled voltage and wherein the source follower outputs the voltage at the sense node after the transfer gate voltage is at the third voltage level as a second sampled voltage.

11. The pixel arrangement of claim 10 , further comprising a read transistor coupled between the source follower transistor and an output, wherein said read transistor is controlled to turn on to pass the first sampled voltage for output and to pass the second sampled voltage for output.

12. The pixel arrangement of claim 10 , wherein said transfer gate voltage further transitions, after the second time period, from the third voltage level to a fourth voltage level and stays at said fourth voltage level for a third time period during which the second sampled voltage is output, and then transitions, after the third time period, from the fourth voltage level to the first voltage level, and wherein the fourth voltage level is between the first and second voltage levels.

13. The pixel arrangement of claim 10 , wherein said reset signal is pulsed at a beginning of said read operation.

14. The pixel arrangement of claim 10 , wherein said reset signal is pulsed while the first and second sampled voltages are output.

15. The pixel arrangement of claim 9 , wherein the pixel arrangement is implemented as an integrated circuit.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 10, 2023
From: STMICROELECTRONICS (GRENOBLE 2) SAS
To: STMICROELECTRONICS INTERNATIONAL N.V.
Reel/Frame 063282/0095 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 1, 2022
From: STMICROELECTRONICS (RESEARCH & DEVELOPMENT) LIMITED
To: STMICROELECTRONICS INTERNATIONAL N.V.
Reel/Frame 061608/0489 →
Priority Claims (1)
GB 1314288.0 · Aug 9, 2013 · national
Continuity (3)
Division 14988376 · Jan 5, 2016
Division 14454776 · Aug 8, 2014
Related Publication 20170317138A1 · Nov 2, 2017