Super junction MOSFET and method of manufacturing the same
A super junction MOSFET includes a substrate having a first conductive type, an epitaxial layer formed on the substrate, a set of pillars extending from the substrate through the epitaxial layer, the set of pillars being spaced apart from each other, a set of first wells, the set of first wells formed in the epitaxial layer to extend to an upper face of the epitaxial layer, and each of the set of first wells connected to at least one corresponding pillar of the set of pillars, a set of second wells of the first conductive type formed in the set of first wells, and a plurality of gate structures formed on the epitaxial layer, each extending in a first direction to have a stripe shape such that the gate structures are spaced apart from each other. Thus, the gate structure has a relatively small area to reduce an input capacitance of the super junction MOSFET.
1. A super junction MOSFET comprising:
a substrate having a first conductive type;
an epitaxial layer formed on the substrate, the epitaxial layer having the first conductive type;
a set of pillars extending from the substrate through the epitaxial layer, the set of pillars being spaced apart from each other;
a set of first wells, each of the set of first wells having a second conductive type, the set of first wells formed in the epitaxial layer to extend to an upper face of the epitaxial layer, and each of the set of first wells connected to at least one corresponding pillar of the set of pillars;
a set of second wells of the first conductive type formed in the set of first wells; and
a plurality of gate structures formed on the epitaxial layer, each extending in a first direction to have a stripe shape such that the gate structures are spaced apart from each other,
wherein the set of pillars are spaced apart from one another along a second direction perpendicular to the first direction to have multiple rows such that the pillars are arranged to have a hexagonal array in a serpentine pattern along the second direction,
wherein the set of pillars includes a first group of the set of pillars arranged in a first row and a second group of the set of pillars arranged in a second row parallel and adjacent to the first row, and each of the gate structures extends between members of the first group of the set of pillars and over members of the second group of the set of pillars, and
wherein the second group of the set of pillars are formed in the epitaxial layer, and are spaced apart from the first wells and the gate structures.
2. The super junction MOSFET of claim 1 , wherein each of the set of pillars has one of a hexagonal, a circular or a rectangular cross-section.
3. The super junction MOSFET of claim 1 , wherein each of the plurality gate structures includes:
a gate insulating layer formed on the epitaxial layer;
a gate electrode formed on the gate insulating layer; and
an insulating interlayer surrounding the gate electrode.