Josephson junction using molecular beam epitaxy
According to various implementations of the invention, a vertical Josephson Junction device may be realized using molecular beam epitaxy (MBE) growth of YBCO and PBCO epitaxial layers in an a-axis crystal orientation. Various implementations of the invention provide improved vertical JJ devices using SiC or LSGO substrates; GaN, AlN, or MgO buffer layers; YBCO or LSGO template layers; YBCO conductive layers and various combinations of barrier layers that include PBCO, NBCO, and DBCO. Such JJ devices are simple to fabricate with wet and dry etching, and allow for superior current flow across the barrier layers.
1. A Josephson Junction comprising:
a substrate layer adjacent to and configured to support a buffer layer, the substrate layer comprising SiC;
the buffer layer adjacent to and configured to support a template layer;
the template layer configured to orient subsequent adjacent layers in an a-axis orientation, wherein the template layer comprises LGSO or YBCO in the a-axis orientation;
a first conductive layer adjacent the template layer and oriented in the a-axis orientation, wherein the first conductive layer is YBCO in the a-axis orientation;
a barrier layer adjacent the first conductive layer; and
a second conductive layer adjacent the barrier layer and oriented in the a-axis orientation, wherein the second conductive layer is YBCO in the a-axis orientation;
wherein the template layer, the first conductive layer, the second conductive layer and the barrier layer are all formed via molecular beam epitaxy.
2. The Josephson Junction of claim 1 , wherein the barrier layer comprises PBCO.
3. The Josephson Junction of claim 1 , wherein the barrier layer comprises a perovskite.
4. The Josephson Junction of claim 1 , wherein the buffer layer comprises AlN, MgO, or GaN.
5. The Josephson Junction of claim 1 , wherein the buffer layer comprises YBCO in the a-axis orientation or MgO.
6. A Josephson Junction comprising:
a substrate layer adjacent to and configured to support a buffer layer, wherein the substrate layer comprises SiC;
the buffer layer adjacent to and configured to support a template layer, wherein the buffer layer comprises AlN, MgO, or GaN;
the template layer oriented in an a-axis orientation and configured to orient subsequent adjacent layers in the a-axis orientation, wherein the template layer comprises LGSO or YBCO;
a first conductive layer adjacent the template layer and oriented in the a-axis orientation, wherein the first conductive layer is YBCO;
a barrier layer adjacent the first conductive layer, wherein the barrier layer comprises PBCO; and
a second conductive layer adjacent the barrier layer and oriented in the a-axis orientation, wherein the second conductive layer is YBCO;
wherein the template layer, the first conductive layer, the second conductive layer and the barrier layer are all formed via molecular beam epitaxy.